BC847BVN COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • • • Mechanical Data Epitaxial Die Construction Two Internally Isolated NPN/PNP Transistors in One Package Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) • • • • • • Case: SOT563 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.003 grams (Approximate) SOT563 C1 B2 E2 Q2 Q1 E1 C2 Device Schematic Top View Bottom View Top View B1 Ordering Information (Notes 4 & 5) Part Number BC847BVN-7 BC847BVNQ-7 Notes: Compliance AEC-Q101 Automotive Marking KAW KAW Reel Size (inches) 7 7 Tape Width (mm) 8 8 Quantity per Reel 3,000 3,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SOT563 KAW = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) KAW YM Date Code Key Year Code Month Code 2010 X Jan 1 2011 Y Feb 2 BC847BVN Document number: DS30627 Rev. 7 - 2 2012 Z Mar 3 Apr 4 2013 A May 5 2014 B Jun 6 1 of 6 www.diodes.com Jul 7 2015 C Aug 8 Sep 9 2016 D Oct O 2017 E Nov N Dec D March 2015 © Diodes Incorporated BC847BVN Maximum Ratings: NPN, BC847B Type (Q1) (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VCBO VCEO VEBO IC ICM IEM Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Peak Emitter Current Value 50 45 6 100 200 200 Unit V V V mA mA mA Maximum Ratings: PNP, BC857B Type (Q2) (@TA = +25°C unless otherwise specified.) Characteristic Symbol VCBO VCEO VEBO IC ICM IEM Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Peak Emitter Current Value -50 -45 -6 -100 -200 -200 Unit V V V mA mA mA Value 150 833 -65 to +150 Unit mW °C/W °C Thermal Characteristics – Total Device (@TA = +25°C unless otherwise specified.) Characteristic Power Dissipation (Note 6) Total Device Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range Note: Symbol PD RθJA TJ, TSTG 6. For a device surface mounted on minimum recommended pad layout FR-4 PCB with single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. Electrical Characteristics: NPN, BC847B Type (Q1) (@TA = +25°C unless otherwise specified.) Characteristic (Note 7) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Symbol BVCBO BVCEO BVEBO hFE Min 50 45 6 200 Typ — — — 290 90 200 Max — — — 450 250 600 Unit V V V — Collector-Emitter Saturation Voltage VCE(sat) — Base-Emitter Saturation Voltage VBE(sat) — 700 900 — mV Base-Emitter Voltage VBE(on) 580 — 660 — 700 720 mV Collector-Cutoff Current ICBO — — — — 15 5.0 nA µA Gain Bandwidth Product fT 100 300 — MHz CCBO — 3.5 6.0 pF Collector-Base Capacitance Note: mV Test Condition IC = 100µA, IB = 0 IC = 10mA, IB = 0 IE = 100µA, IC = 0 VCE = 5.0V, IC = 2.0mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA VCE = 5.0V, IC = 2.0mA VCE = 5.0V, IC = 10mA VCB = 30V VCB = 30V, TA = +150°C VCE = 5.0V, IC = 10mA, f = 100MHz VCB = 10V, f = 1.0MHz 7. Short duration pulse test used to minimize self-heating effect. BC847BVN Document number: DS30627 Rev. 7 - 2 2 of 6 www.diodes.com March 2015 © Diodes Incorporated BC847BVN Electrical Characteristics: PNP, BC857B Type (Q2) (@TA = +25°C unless otherwise specified.) Characteristic (Note 8) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Symbol BVCBO BVCEO BVEBO hFE Min -50 -45 -6 220 Typ — — — 290 -75 -250 Max — — — 475 -300 -650 Collector-Emitter Saturation Voltage VCE(sat) — Base-Emitter Saturation Voltage VBE(sat) Base-Emitter Voltage — -700 -850 — -950 mV VBE(on) -600 — -650 — -750 -820 mV Collector-Cutoff Current ICBO — — — — -15 -4.0 nA µA Gain Bandwidth Product fT 100 200 — MHz CCBO — 3 4.5 pF Collector-Base Capacitance Note: Unit V V V — mV Test Condition IC = -100µA, IB = 0 IC = -10mA, IB = 0 IE = -100µA, IC = 0 VCE = -5.0V, IC = -2.0mA IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA VCE = -5.0V, IC = -2.0mA VCE = -5.0V, IC = -10mA VCB = -30V VCB = -30V, TA = +150°C VCE = -5.0V, IC = -10mA, f = 100MHz VCB = -10V, f = 1.0MHz 8. Short duration pulse test used to minimize self-heating effect. 1,000 150 PD, POWER DISSIPATION (mW) 200 hFE, DC CURRENT GAIN Thermal Characteristics – Total Device 100 100 50 10 R θJA = 833°C/W 1 0.01 0 -50 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 2. Typical DC Current Gain vs. Collector Current (BC847B Type) 0 50 100 150 TA, AMBIENT TEMPERATURE (°C) Figure 1. Power Dissipation vs. Ambient Temperature Total Device 0.5 f = 1MHz 0.4 CAPACITANCE (pF) VCE, COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC IB = 20 0.3 0.2 0.1 0 0.1 TA = 100°C TA = 25°C 10 6 Cibo Cobo T A = -50 °C 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 3. Typical Collector-Emitter Saturation Voltage vs. Collector Current (BC847B Type) BC847BVN Document number: DS30627 Rev. 7 - 2 VR, REVERSE VOLTAGE (V) Figure 4. Typical Capacitance Characteristics (BC847B Type) 3 of 6 www.diodes.com March 2015 © Diodes Incorporated BC847BVN -1,000 VCE = 10V hFE, DC CURRENT GAIN fT, GAIN-BANDWIDTH PRODUCT (MHz) 1,000 T = 25°C A VCE =5V VCE = 2V 100 10 0.1 -100 -10 -1 -1 -10 -100 -1,000 IC, COLLECTOR CURRENT (mA) Figure 6. Typical DC Current Gain vs. Collector Current (BC857B Type) 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 5. Typical Gain-Bandwidth Product vs. Collector Current (BC847B Type) -0.5 f = 1MHz -0.4 CAPACITANCE (pF) VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC IB = 10 -0.3 TA = 25°C -0.2 TA = 150°C 10 Cibo 6 -0.1 Cobo TA = -50°C 0 -0.1 ft, GAIN-BANDWIDTH PRODUCT (MHz) -1,000 -1 -10 -100 IC, COLLECTOR CURRENT (mA) Figure 7. Typical Collector-Emitter Saturation Voltage vs. Collector Current (BC857B Type) -1,000 VR, REVERSE VOLTAGE (V) Figure 8. Typical Capacitance Characteristics (BC857B Type) -100 -10 -1 -10 -100 IC, COLLECTOR CURRENT (mA) Figure 9. Typical Gain-Bandwidth Product vs. Collector Current (BC857B Type) BC847BVN Document number: DS30627 Rev. 7 - 2 4 of 6 www.diodes.com March 2015 © Diodes Incorporated BC847BVN Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A B SOT563 Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm C D G M K H L Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C2 Z C2 Dimensions Value (in mm) Z 2.2 G 1.2 X 0.375 Y 0.5 C1 1.7 C2 0.5 C1 G Y X BC847BVN Document number: DS30627 Rev. 7 - 2 5 of 6 www.diodes.com March 2015 © Diodes Incorporated BC847BVN IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com BC847BVN Document number: DS30627 Rev. 7 - 2 6 of 6 www.diodes.com March 2015 © Diodes Incorporated