Spec. No. : C169E3 Issued Date : 2015.12.04 Revised Date : 2016.04.27 Page No. : 1/ 8 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE011N10RE3 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=11A Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package Symbol 100V 58A 9A 11 mΩ(typ) Outline MTE011N10RE3 TO-220 GDS G：Gate D：Drain S：Source Ordering Information Device MTE011N10RE3-0-UB-X Package TO-220 (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTE011N10RE3 CYStek Product Specification Spec. No. : C169E3 Issued Date : 2015.12.04 Revised Date : 2016.04.27 Page No. : 2/ 8 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25C) Parameter Symbol Limits Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25C, VGS=10V (Note 1) Continuous Drain Current @TC=100C, VGS=10V (Note 1) Continuous Drain Current @TA=25C, VGS=10V (Note 2) Continuous Drain Current @TA=70C, VGS=10V (Note 2) Pulsed Drain Current @ VGS=10V Avalanche Current Single Pulse Avalanche Energy @ L=0.5mH, ID=34 Amps, VDD=50V (Note 4) Repetitive Avalanche Energy (Note 3) TC=25C (Note 1) TC=100C (Note 1) Power Dissipation TA=25C (Note 2) TA=70C (Note 2) Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm) from case for 10 seconds Maximum Temperature for Soldering @ Package Body for 10 seconds Operating Junction and Storage Temperature VDS VGS IDM IAS 100 ±20 58 41 9 7.2 136 34 EAS 289 EAR 10 100 50 2.1 1.3 ID IDSM PD PDSM TL 300 TPKG 260 Tj, Tstg -55~+175 Unit V A mJ W C *Drain current limited by maximum junction temperature Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max (Note 2) Symbol RθJC RθJA Value 1.5 60 Unit C/W Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. 100% tested by condition of VDD=50V, ID=20A, L=0.5mH, VGS=10V. MTE011N10RE3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C169E3 Issued Date : 2015.12.04 Revised Date : 2016.04.27 Page No. : 3/ 8 Characteristics (Tj=25C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) *GFS IGSS IDSS Min. Typ. Max. Unit 100 2.0 - 74 14.5 11 4.0 ±100 1 5 13.8 V mV/C V S nA 42 13 11.9 26.8 21.6 50 10.8 2442 294 21 - 0.86 37 60 34 136 1.2 - *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *IS *ISM *VSD *trr *Qrr - Test Conditions mΩ VGS=0V, ID=250μA Reference to 25C, ID=250μA VDS = VGS, ID=250μA VDS =10V, ID=10A VGS=±20V VDS =80V, VGS =0V VDS =80V, VGS =0V, Tj=55C VGS =10V, ID=11A nC VDD=50V, ID=22A,VGS=10V ns VDD=50V, ID=11A, VGS=10V, RG=4.7Ω pF VGS=0V, VDS=30V, f=1MHz μA A V ns nC IS=22A, VGS=0V VGS=0V, IF=22A, dIF/dt=100A/μs *Pulse Test : Pulse Width 300μs, Duty Cycle2% MTE011N10RE3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C169E3 Issued Date : 2015.12.04 Revised Date : 2016.04.27 Page No. : 4/ 8 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 80 ID, Drain Current (A) 70 60 BVDSS, Normalized Drain-Source Breakdown Voltage 10V, 9V, 8V 7V 50 40 30 6V 20 VGS=5V 10 1.2 1 0.8 0.6 5.5V ID=250μA, VGS=0V 0.4 0 0 2 4 6 8 VDS, Drain-Source Voltage(V) -75 -50 -25 10 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1.2 VSD, Source-Drain Voltage(V) R DS(on), Static Drain-Source On-State Resistance(mΩ) 100 VGS=6V 10 VGS=10V VGS=0V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 1 0.1 1 10 ID, Drain Current(A) 0 100 2 4 6 8 10 12 14 16 IDR, Reverse Drain Current(A) 18 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 1000 2.4 ID=11A R DS(on), Normalized Static DrainSource On-State Resistance R DS(on), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) 800 600 400 200 2 VGS=10V, ID=11A 1.6 1.2 0.8 0.4 RDS(ON) @Tj=25°C : 11mΩ typ. 0 0 0 MTE011N10RE3 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C169E3 Issued Date : 2015.12.04 Revised Date : 2016.04.27 Page No. : 5/ 8 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage 1.4 VGS(th), Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 Coss 100 Crss 1.2 ID=1mA 1 0.8 0.6 ID=250μA 0.4 0.2 10 0 5 10 15 20 25 VDS, Drain-Source Voltage(V) -75 -50 -25 30 75 100 125 150 175 200 Gate Charge Characteristics 100 10 VDS=10V VDS=20V VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance(S) 25 50 Tj, Junction Temperature(°C) Forward Transfer Admittance vs Drain Current 10 VDS=15V 1 0.1 Ta=25°C Pulsed 8 VDS=50V 6 VDS=80V 4 2 ID=22A 0 0.01 0.001 0.01 0.1 1 ID, Drain Current(A) 10 0 100 5 10 15 20 25 30 35 40 45 50 Qg, Total Gate Charge(nC) Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 70 RDSON Limited 100 ID, Maximum Drain Current(A) 1000 ID, Drain Current(A) 0 10μs 100μs 10 1ms TC=25°C, Tj=175°C VGS=10V, RθJC=1.5°C/W Single Pulse 1 10ms 100ms DC 60 50 40 30 20 10 VGS=10V, RθJC=1.5°C/W 0 0.1 0.1 MTE011N10RE3 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 150 TC, Case Temperature(°C) 175 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C169E3 Issued Date : 2015.12.04 Revised Date : 2016.04.27 Page No. : 6/ 8 Typical Characteristics(Cont.) Single Pulse Power Rating, Junction to Case Typical Transfer Characteristics 2000 80 1800 VDS=10V 70 60 1400 Power (W) ID, Drain Current(A) TJ(MAX) =175°C TC=25°C RθJC=1.5°C/W 1600 50 40 30 1200 1000 800 600 20 400 10 200 0 0 2 4 6 8 VGS, Gate-Source Voltage(V) 10 12 0 0.0001 0.001 0.01 0.1 Pulse Width(s) 1 10 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t 1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=1.5°C/W 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 1.E-04 MTE011N10RE3 1.E-03 1.E-02 1.E-01 t1, Square Wave Pulse Duration(s) 1.E+00 1.E+01 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C169E3 Issued Date : 2015.12.04 Revised Date : 2016.04.27 Page No. : 7/ 8 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5C of actual peak temperature(tp) Ramp down rate Time 25 C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3C/second max. 3C/second max. 100C 150C 60-120 seconds 150C 200C 60-180 seconds 183C 60-150 seconds 240 +0/-5 C 217C 60-150 seconds 260 +0/-5 C 10-30 seconds 20-40 seconds 6C/second max. 6 minutes max. 6C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTE011N10RE3 CYStek Product Specification Spec. No. : C169E3 Issued Date : 2015.12.04 Revised Date : 2016.04.27 Page No. : 8/ 8 CYStech Electronics Corp. TO-220 Dimension Marking: 4 Device Name Date Code E011 N10R □□□□ 1 3-Lead TO-220 Plastic Package CYStek Package Code: E3 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain *: Typical Millimeters Min. Max. 4.400 4.600 2.250 2.550 0.710 0.910 1.170 1.370 0.330 0.650 1.200 1.400 10.250 9.910 9.750 8.950 12.650 12.950 DIM A A1 b b1 c c1 D E E1 Inches Min. Max. 0.173 0.181 0.089 0.100 0.028 0.036 0.046 0.054 0.013 0.026 0.047 0.055 0.404 0.390 0.384 0.352 0.510 0.498 DIM e e1 F H h L L1 V Φ Millimeters Min. Max. 2.540* 4.980 5.180 2.650 2.950 8.100 7.900 0.000 0.300 12.900 13.400 2.850 3.250 7/500 REF 3.400 3.800 Inches Min. Max. 0.100* 0.196 0.204 0.104 0.116 0.319 0.311 0.000 0.012 0.508 0.528 0.112 0.128 0.295 REF 0.134 0.150 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: Lead: Pure tin plated. Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. CYStek reserves the right to make changes to its products without notice. CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTE011N10RE3 CYStek Product Specification