Single N-channel Trench MOSFET 30V, 94.5A, 4.2mΩ General Description Features The MDU1518 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU1518 is suitable device for DC/DC Converter and general purpose applications. D D D D D D D D S S S G G S S S VDS = 30V ID = 94.5A @VGS = 10V RDS(ON) < 4.2 mΩ @VGS = 10V < 6.2 mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested D G PowerDFN56 S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Symbol Rating Unit VDSS 30 V VGSS ±20 V o TC=25 C 94.5 o TC=70 C Continuous Drain Current (1) o 75.6 ID TA=25 C 27.3(3) TA=70oC 21.8(3) IDM Pulsed Drain Current 100 o TC=25 C TC=70 C o Single Pulse Avalanche Energy (2) 42.1 PD TA=25 C 5.5(3) TA=70oC 3.5(3) EAS 143 TJ, Tstg -55~150 Symbol Rating Steady State RθJA 22.7 Steady State RθJC 1.6 Junction and Storage Temperature Range A 65.7 o Power Dissipation A W mJ o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case May. 2011. Version 1.1 (1) 1 Unit o C/W MagnaChip Semiconductor Ltd. MDU1518 – Single N-Channel Trench MOSFET 30V MDU1518 Part Number Temp. Range MDU1518URH o -55~150 C Package Packing Quantity Rohs Status PowerDFN56 Tape & Reel 3000 units Halogen Free Electrical Characteristics (TJ = 25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 30 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.3 1.9 2.7 Drain Cut-Off Current IDSS Gate Leakage Current IGSS Drain-Source ON Resistance Forward Transconductance VDS = 30V, VGS = 0V - - 1 - - 5 VGS = ±20V, VDS = 0V - - ±0.1 VGS = 10V, ID = 22A - 3.6 4.2 - 5.2 6.1 VGS = 4.5V, ID = 18A - 5.2 6.2 VDS = 5V, ID = 22A - 34.6 - 20.2 28.8 37.4 9.6 13.7 17.8 - 5.7 - - 4.5 - 1285 1835 2386 TJ=55oC TJ=125oC RDS(ON) gfs V µA mΩ S Dynamic Characteristics Total Gate Charge Qg(10V) Total Gate Charge Qg(4.5V) Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss VDS = 15V, ID = 22A, VGS = 10V VDS = 15V, VGS = 0V, f = 1.0MHz Reverse Transfer Capacitance Crss 130 186 242 Output Capacitance Coss 265 379 492 Turn-On Delay Time td(on) - 10.2 - - 12.3 - - 36.6 - - 10.1 - Rise Time Turn-Off Delay Time Fall Time Gate Resistance tr td(off) VGS = 10V, VDS = 15V, ID = 22A, RG = 3.0Ω tf nC pF ns Rg f=1 MHz - 1.4 3.0 Ω VSD IS = 22A, VGS = 0V - 0.82 1.1 V - 29.2 43.8 ns - 21.9 32.8 nC Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IF = 22A, dl/dt = 100A/µs Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7) 2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 30.0A, VDD = 27V, VGS = 10V 3. T < 10sec. May. 2011. Version 1.1 2 MagnaChip Semiconductor Ltd. MDU1518 – Single N-Channel Trench MOSFET 30V Ordering Information 8 Drain-Source On-Resistance [mΩ] 4.0V 4.5V ID, Drain Current [A] 40 8.0V 3.5V VGS = 10V 30 20 3.0V 10 0 0.0 0.5 1.0 1.5 7 6 VGS = 4.5V 5 4 VGS = 10V 3 2 2.0 5 10 15 20 VDS, Drain-Source Voltage [V] 30 35 40 45 50 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 1.8 30 ※ Notes : ID = 22.0A ※ Notes : 1. VGS = 10 V 2. ID = 22.0 A 1.6 RDS(ON) [mΩ ], Drain-Source On-Resistance RDS(ON), (Normalized) Drain-Source On-Resistance 25 ID, Drain Current [A] 1.4 1.2 1.0 25 20 15 10 T A = 25℃ 5 0.8 0.6 -50 0 -25 0 25 50 75 100 125 2 150 3 4 5 6 7 8 9 10 V GS, Gate to Source Volatge [V] o TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage 20 ※ Notes : IDR, Reverse Drain Current [A] VDS = 5V ID, Drain Current [A] 16 12 TA=25℃ 8 4 10 1 10 0 TA=25℃ 10 -1 0 0 1 2 3 4 5 0.3 VGS, Gate-Source Voltage [V] 0.5 0.6 0.7 0.8 0.9 1.0 VSD, Source-Drain voltage [V] Fig.5 Transfer Characteristics May. 2011. Version 1.1 0.4 Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDU1518 – Single N-Channel Trench MOSFET 30V 50 2400 ※ Note : ID = 22A VDS = 15V 2100 Ciss 8 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Capacitance [pF] 1800 6 4 1500 1200 900 Crss 300 0 0 5 10 15 20 25 30 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz Coss 600 2 0 35 0 5 10 QG, Total Gate Charge [nC] 15 20 25 30 VDS, Drain-Source Voltage [V] Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics 3 120 10 110 Operation in This Area is Limited by R DS(on) 100 2 90 10 ms ID, Drain Current [A] ID, Drain Current [A] 10 100 ms 1s 10 s DC 1 10 0 10 80 70 60 50 40 30 20 Single Pulse TJ=Max rated TC=25℃ -1 10 10 -1 10 10 0 1 0 25 2 10 10 50 75 100 125 150 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] Fig.10 Maximum Drain Current Vs. Case Temperature Fig.9 Maximum Safe Operating Area 1 Zθ JA(t), Thermal Response 10 0 D=0.5 10 0.2 -1 0.1 0.05 10 0.02 0.01 -2 10 ※ Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC single pulse -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve May. 2011. Version 1.1 4 MagnaChip Semiconductor Ltd. MDU1518 – Single N-Channel Trench MOSFET 30V 10 PowerDFN56 (5x6mm) Dimensions are in millimeters, unless otherwise specified Dimension MILLIMETERS Min A 0.90 1.10 b 0.33 0.51 C 0.20 0.34 D1 4.50 5.10 D2 - 4.22 E 5.90 6.30 E1 5.50 6.10 E2 - 4.30 e May. 2011. Version 1.1 5 Max 1.27BSC H 0.41 0.71 K 0.20 - L 0.51 0.71 α 0° 12° MagnaChip Semiconductor Ltd. MDU1518 – Single N-Channel Trench MOSFET 30V Package Dimension MDU1518 – Single N-Channel Trench MOSFET 30V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. May. 2011. Version 1.1 6 MagnaChip Semiconductor Ltd.