Foshan MJE13003VN5 Silicon npn transistor in a to-126(r) plastic package. Datasheet

MJE13003VN5
Rev.E Mar.-2016
描述
/
DATA SHEET
Descriptions
TO-126(R)塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-126(R) Plastic Package.

特征
/ Features
耐压高,快速转换。
High Voltage Capability High Speed Switching.

用途
/
Applications
主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。
High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc.
内部等效电路
引脚排列
12
/ Equivalent Circuit
/ Pinning
3
PIN1:Base
放大及印章代码
PIN 2:Collector
PIN 3: Emitter
/ hFE Classifications & Marking
见印章说明   See Marking Instructions
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MJE13003VN5
Rev.E Mar.-2016
极限参数
/
DATA SHEET
Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Collector to Base Voltage
VCBO
400
V
Collector to Emitter Voltage
VCEO
200
V
Emitter to Base Voltage
VEBO
9.0
V
Collector Current - Continuous
IC
5.0
A
Collector Power Dissipation
PC
1.25
W
50
W
Tj
150
℃
Tstg
-55~150
℃
PC(TC=25℃)
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
电性能参数
/ Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符号
Symbol
测试条件
Test Conditions
最小值 典型值 最大值 单位
Min
Typ
Max
Unit
VCBO
IC=1mA
IE=0
400
V
VCEO
IC=10mA
IB=0
200
V
Emitter to Base Breakdown Voltage
VEBO
IE=1mA
IC=0
9.0
V
Collector Cut-Off Current
ICBO
VCB=400V
IE=0
0.1
mA
Collector cut-off current
ICEO
VCE=200V
IB=0
0.1
mA
Emitter Base Cut-Off Current
IEBO
VEB=9.0V
IC=0
0.1
mA
DC Current Gain
hFE
VCE=5.0V
IC=0.5A
10
40
Collector to Emitter Saturation
Voltage
VCE(sat)
IC=2.0A
IB=0.5A
0.6
V
Base to Emitter Saturation Voltage
VBE(sat)
IC=2.0A
IB=0.5A
1.2
V
VCE=10V
f=1.0MHz
IC=0.5A
VCE=5V
(UI9600)
IC=0.25A
Transition Frequency
Storage time
Fall time
http://www.fsbrec.com
fT
Tstg
tf
4.0
MHz
4.0
μs
0.6
μs
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MJE13003VN5
Rev.E Mar.-2016
电参数曲线图
DATA SHEET
/ Electrical Characteristic Curve
SOA(DC)
hFE-Ic
Vces-IC
tS-Ta
http://www.fsbrec.com
PC-TC
hFE-Ic
Vbes-IC
hFE-Ta
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MJE13003VN5
Rev.E Mar.-2016
外形尺寸图
DATA SHEET
/ Package Dimensions
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MJE13003VN5
Rev.E Mar.-2016
印章说明
/
DATA SHEET
Marking Instructions
BR
13003V
N5
****
说明:
BR: 

为公司代码
13003V:
为型号代码
N5:  

为规格代码
****:

为生产批号代码,随生产批号变化。
BR:  

Company Code
13003V:

Product Type.
Note:
N5:
****:
http://www.fsbrec.com
Specification Code.

Lot No. Code, code change with Lot No.
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MJE13003VN5
Rev.E Mar.-2016
DATA SHEET
波峰焊温度曲线图(无铅)
/
Temperature Profile for Dip Soldering(Pb-Free)
说明:
Note:
1、预热温度 25~150℃,时间 60~90sec;
1.Preheating:25~150℃, Time:60~90sec.
2、峰值温度 255±5℃,时间持续为 5±0.5sec;
2.Peak Temp.:255±5℃, Duration:5±0.5sec.
3、焊接制程冷却速度为 2~10℃/sec.
3. Cooling Speed: 2~10℃/sec.
耐焊接热试验条件
/
Resistance to Soldering Heat Test Conditions
温度:270±5℃
包装规格
Package Type
封装形式
TO-126/F
套管包装
Package Type
封装形式
使用说明
Temp.:270±5℃
Time:10±1 sec
/ Packaging SPEC.
散件包装
TO-126/F
时间:10±1 sec.
/ BULK
Units 包装数量
Dimension
包装尺寸
3
(unit:mm )
Units/Tube
只/套管
Tubes/Inner Box
套管/盒
Units/Inner Box
只/盒
Inner Boxes/Outer Box
盒/箱
Units/Outer Box
只/箱
Tube 套管
Inner Box 盒
Outer Box 箱
500
6
3,000
5
15,000
135×190
237×172×102
560×245×195
Units/Tube
只/套管
Tubes/Inner Box
套管/盒
Units/Inner Box
只/盒
Inner Boxes/Outer Box
盒/箱
Units/Outer Box
只/箱
65
26
1,690
5
8,450
/ TUBE
Units 包装数量
Dimension
包装尺寸
3
(unit:mm )
Tube 套管
Inner Box 盒
Outer Box 箱
532×31×5.6
555×164×50
575×290×180
/ Notices
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