MCC MCQ4407 P -channel enhancement mode field effect transistor Datasheet

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omponents
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MCQ4407
Features
•
Halogen free available upon request by adding suffix "-HF"
•
Lead Free Finish/Rohs Compliant ("P"Suffix designates
RoHS Compliant. See ordering information)
•
Epoxy meets UL 94 V-0 flammability rating
•
P -Channel
Enhancement Mode
Field Effect Transistor
Moisture Sensitivity Level 1
Marking:Q4407
•
SOP-8
Maximum ratings ( Ta=25℃ unless otherwise noted)
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
ID
-12
A
Pulsed Drain Current
IDM
-48
Single Pulsed Avalanche Energy (1)
EAS
115
A
mJ
Power Dissipation
PD
1.4
W
RθJA
89
℃/W
TJ
150
Thermal Resistance from
Junction to Ambient
Operating Junction Temperature
Storage Temperature
TSTG
-55 ~+150
B
D
Unit
A
C
F
E
K
H
J
℃
G
Notes :
(1).EAS condition: VDD=-50V,L=0.5mH, RG=25Ω, Starting TJ = 25°C
DIMENSIONS
DIM
A
B
C
D
E
F
G
H
J
K
Equivalent Circuit
8
D
1
7
D
2
S
6
D
3
S
5
D
4
S
G
θ
Revision: B
INCHES
MIN
MAX
0.053
0.069
0.004
0.053
0.013
0.007
0.189
0.050(BSC)
0.228
0.244
0.150
0.157
0.016
0.050
0°
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0.010
0.061
0.020
0.010
0.197
8°
MM
MIN
1.350
MAX
1.750
NOTE
0.100
0.250
1.350
1.550
0.330
0.510
0.170
0.250
4.800
5.000
1.270(BSC)
5.800
6.200
3.800
4.000
0.400
1.270
0°
8°
2016/10/10
MCC
Micro Commercial Components
Electrical characteristics (Ta=25
Parameter
unless otherwise noted)
Symbol
Test Condition
Min
Typ
Max
Unit
Off characteristics
Drain-source breakdown voltage
V(BR) DSS
VGS = 0V, ID =-250µA
Zero gate voltage drain current
IDSS
VDS=-30V, VGS =0V
Gate-body leakage current
IGSS
VDS =0V, VGS =±20V
Gate-threshold voltage
VGS(th)
VDS =VGS, ID =-250µA
Static drain-source on-sate resistance
RDS(on)
-30
V
-1
µA
±100
nA
On characteristics (note1)
Forward transconductance
gFS
-1.5
-2.2
V
VGS =-10V, ID =-12A
7.8
13
mΩ
VGS =-6.0V, ID =-10A
9
17
mΩ
VDS =-5V, ID =-15A
-1.0
25
S
Dynamic characteristics (note 2)
Input capacitance
2900
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
VDS =-15V,VGS
=0V, f =1MHz
410
pF
280
Switching characteristics (note 2)
48
Total gate charge
Qg
Gate-source charge
Qgs
VGS=-10V,
12
Gate-drain charge
Qgd
ID=-10A
14
Turn-on delay time
td(on)
Turn-on rise time
tr
Turn-off delay time
td(off)
Turn-off fall time
tf
Gate Resistance
Rg
VDS=-15V,
nC
15
VDD=-15V,VGS=-10V,
RG=3Ω, RL=1.25Ω
11
ns
44
21
f =1MHz, VDS=0V,
3.6
Ω
-1.2
V
IS
-15
A
ISM
-60
A
VGS=0V,
Drain-Source Diode Characteristics
Drain-source diode forward voltage(note1)
Continuous drain-source diode forward
current
Pulsed drain-source diode forward current
VSD
VGS =0V, IS=-2A
Notes:
1.
Pulse Test : Pulse Width≤300µs, duty cycle ≤2%.
2.
Guaranteed by design, not subject to production testing.
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Output Characteristics
Transfer Characteristics
-12
-12
Ta=25℃
VDS=-3V
Pulsed
Pulsed
-10
(A)
VGS=-3V,-4V,-6V,-8V
VGS=-2.5V
ID
-8
DRAIN CURRENT
ID
(A)
-10
DRAIN CURRENT
R
-6
-4
VGS=-2.2V
-2
-8
Ta=100℃
Ta=25℃
-6
-4
-2
-0
-0
-0
-1
-2
-3
DRAIN TO SOURCE VOLTAGE
-4
VDS
-5
-0
-1
(V)
-2
-3
-4
GATE TO SOURCE VOLTAGE
VGS
-5
(V)
RDS(ON) —— VGS
RDS(ON) —— ID
12
50
Ta=25℃
Pulsed
ID=-12A
Pulsed
(m)
RDS(ON)
VGS=-6V
ON-RESISTANCE
ON-RESISTANCE
RDS(ON)
(m)
40
10
8
VGS=-10V
6
30
20
Ta=100℃
10
Ta=25℃
4
0
-2
-4
-6
-8
DRAIN CURRENT
ID
-10
-12
-2
(A)
-3
-4
-5
-6
-7
-8
GATE TO SOURCE VOLTAGE
VGS
-9
-10
(V)
Threshold Voltage
IS —— VSD
-2.0
-12
-10
Pulsed
VTH
THRESHOLD VOLTAGE
SOURCE CURRENT
IS (A)
(V)
-1.8
-1
Ta=100℃
Ta=25℃
-1.6
ID=-250uA
-1.4
-1.2
-1.0
-0.1
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
SOURCE TO DRAIN VOLTAGE
Revision: B
-1.2
-1.4
-0.8
25
-1.6
VSD (V)
50
75
JUNCTION TEMPERATURE
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100
TJ
125
( ℃)
2016/10/10
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Ordering Information :
Device
Packing
Part Number-TP
Tape&Reel:4Kpcs/Reel
Note : Adding "-HF" suffix for halogen free, eg. Part Number-TP-HF
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Revision: B
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