NJ10N65 POWER MOSFET 10A 650V N-CHANNEL POWER MOSFET DESCRIPTION The NJ10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. 1 FEATURES * VDS = 650V * ID = 10A * RDS(ON) =0.86Ω@VGS = 10V. * Low gate charge ( typical 44 nC) * Low Crss ( typical 18 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability 1 TO-220 TO-220F SYMBOL ORDERING INFORMATION Ordering Number Package NJ10N65-LI NJ10N65-BL NJ10N65F-LI Note: Pin Assignment: G: Gate TO-220 TO-220 TO-220F D: Drain S: Source Pin Assignment 1 2 3 G D S G D S G D S Packing Tape Box Bulk Tube NJ10N65 POWER MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Avalanche Current (Note 2) Continuous Drain Current Pulsed (Note 2) Single Pulsed (Note 3) Avalanche Energy Repetitive (Note 2) Peak Diode Recovery dv/dt (Note 4) TO-220 TO-220F Power Dissipation SYMBOL VDSS VGSS IAR ID IDM EAS EAR dv/dt RATINGS 650 ± 30 10 10 38 700 15.6 4.5 156 50 UNIT V V A A A mJ mJ V/ns W W PD Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 14.2mH, IAS = 10A, VDD = 50V, RG = 25 Starting TJ = 25°C 4. ISD 9.5A, di/dt 200A/ȝs, VDD BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient SYMBOL șJA TO-220 TO-220F Junction to Case șJC RATING 62.5 0.8 2.5 UNIT °C/W °C/W °C/W NJ10N65 POWER MOSFET ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL BVDSS IDSS TEST CONDITIONS VGS=0V, ID= 250ȝA VDS=650V, VGS=0V VGS=30V, VDS=0V Forward Gate-Source Leakage Current IGSS Reverse VGS=-30V, VDS=0V Breakdown Voltage Temperature Coefficient ǻBVDSS/ǻTJ ID=250 μA, Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250ȝA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=4.75A DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS VDS=25V, VGS=0V, f=1.0 MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) Turn-On Rise Time tR VDD=325V, ID=10A, RG=25ȍ (Note1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS=520V, ID=10A, VGS=10V Gate-Source Charge QGS (Note1, 2) Gate-Drain Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS=0V, IS=10A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time trr VGS=0V, IS=10A, dIF/dt=100A/μs (Note1) Reverse Recovery Charge QRR Notes: 1. Pulse Test : Pulse width 300μs, Duty cycle 2% 2. Essentially independent of operating temperature MIN TYP MAX UNIT 650 0.7 2.0 V 1 μA 100 nA -100 nA V/°C 4.0 0.72 0.86 V ȍ 1570 2040 166 215 18 24 pF pF pF 23 55 69 150 144 300 77 165 44 57 6.7 18.5 ns ns ns ns nC nC nC 420 4.2 1.4 V 10 A 38 A ns μC NJ10N65 POWER MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver VGS VGS (Driver) VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms NJ10N65 POWER MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform L VDS BVDSS IAS RD VDD ID(t) VDS(t) VDD 10V D.U.T. tp tp Time ʳ ʳ ʳ Unclamped Inductive Switching Test Circuit ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ Unclamped Inductive Switching Waveforms Reverse Drain Current, IDR (A) Drain-Source On-Resistance, RDS(ON) (¡) NJ10N65 POWER MOSFET TYPICAL CHARACTERISTICS NJ10N65 POWER MOSFET TYPICAL CHARACTERISTICS(Cont.) Drain-Source On-Resistance, RDS(ON) (Normalized) Drain-Source Breakdown Voltage, BVDSS (Normalized) Maximum Drain Current vs. Case Temperature Maximum Safe Operating Area 2 10 10 Operation in this Area is United by RDM 10s 101 Drain Current, ID (A) Drain Current, ID (A) 8 100s 1ms 10ms 100ms DC 100 Notes: 1.TC=25ć 2.TJ=150ć 3.Single Pulse 10-1 0 10 102 101 Drain-Source Voltage, VDS (V) 6 4 2 103 0 25 50 75 100 125 Case Temperature, TC (ć) 150