DMN2036UCB4 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary VSSS IS TA = +25°C RSS(ON) Max 45mΩ @ VGS = 4.5V 24V 1.6A Description and Applications management. Battery Management Load Switch Battery Protection Built-in G-S Protection Diode against ESD 2kV HBM Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (RSS(ON)) and making it ideal for high efficiency power Case: X2-WLB1616-4 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminal Material: SnAgCu Ball Weight: 0.0023 grams (Approximate) G1 G2 ESD PROTECTED TO 2kV S1 S2 N-Channel Top View N-Channel Equivalent Circuit Ordering Information (Note 4) Part Number DMN2036UCB4-7 Notes: Case X2-WLB1616-4 Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free. 3. Halogen and Antimony free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 8W WW Date Code Key Year Code Month Code 2015 C Jan 1 8W VW 2016 D Feb 2 DMN2036UCB4 Document number: DS39428 Rev. 2 - 2 Mar 3 YM Marking Information YM INFORMATION ADVANCE NEW PRODUCT Features and Benefits VW/WW = Product Type Marking Code YM = Date Code Marking Y = Year (ex: E = 2017) M = Month (ex: 9 = September) 2017 E Apr 4 May 5 2018 F Jun 6 1 of 7 www.diodes.com 2019 G Jul 7 Aug 8 2020 H Sep 9 Oct O 2021 I Nov N Dec D October 2017 © Diodes Incorporated DMN2036UCB4 Maximum Ratings Characteristic Source-Source Voltage Gate-Source Voltage Continuous Source Current Steady State @ TA = +25°C (Note 5) Symbol VSSS VGSS TA = +25°C TA = +70°C Symbol PD RθJA TJ, TSTG Value 1.45 86.68 -55 to +150 Unit W C/W C IS Pulsed Source Current @ TA = +25°C (Notes 5 & 6) INFORMATION ADVANCE NEW PRODUCT Unit V V ISM Value 24 12 1.6 1.3 30 A A Thermal Characteristics Characteristic Power Dissipation, @TA = +25°C (Note 5) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Source to Source Breakdown Voltage TJ = +25°C Zero Gate Voltage Source Current TJ = +25°C Gate-Body Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit V(BR)SS ISSS IGSS 24 — — — — — — 1.0 ±10 V µA µA IS = 1mA, VGS = 0V VSS = 20V, VGS = 0V VGS = ±8V, VSS = 0V VGS(TH) 0.5 — 1.3 V Static Source-Source On-Resistance RSS(ON) 20 20.5 21 22 23 29 30 31 33 36 45 48 50 57 72 mΩ Forward Transfer Admittance Body Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Total Gate Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time |Yfs| VF(S-S) — — 9.4 0.8 — 1.2 S V VSS = 10V, IS = 1.0mA VGS = 4.5V, IS = 3.0A VGS = 4.0V, IS = 3.0A VGS = 3.7V, IS = 3.0A VGS = 3.1V, IS = 3.0A VGS = 2.5V, IS = 3.0A VSS = 10V, IS = 3.0A IF = 3.0A, VGS = 0V Qg tD(ON) tR tD(OFF) tF — — — — — 12.6 183 278 738 572 — — — — — nC ns ns ns ns Notes: Test Condition VGS = 4.5V, VSS = 10V, IS = 6A VDD = 10V, RL = 3.33Ω, IS = 3.0A 5. Device mounted on FR-4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu. 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMN2036UCB4 Document number: DS39428 Rev. 2 - 2 2 of 7 www.diodes.com October 2017 © Diodes Incorporated DMN2036UCB4 20.0 10 VGS = 2.0V VGS = 2.5V 18.0 VGS = 3.0V 14.0 8 IS, SOURCE CURRENT (A) IS, SOURCE CURRENT (A) 16.0 VGS = 1.8V 12.0 10.0 VGS = 4.0V VGS = 4.5V 8.0 6.0 4.0 VGS = 1.5V 2.0 VGS = 1.4V 4 TJ = 85℃ TJ = 150℃ 2 TJ =25℃ TJ = -55℃ 0 0 0.5 1 1.5 2 2.5 3 VSS, SOURCE-SOURCE VOLTAGE (V) 0.8 1 1.2 1.4 1.6 1.8 VGS, GATE-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic 0.046 0.044 0.042 0.04 VGS = 2.5V 0.038 0.036 0.034 VGS = 3.7V 0.032 0.03 VGS = 4.5V 0.028 0.6 RSS(ON), SOURCE-SOURCE ON-RESISTANCE (Ω) RSS(ON), SOURCE-SOURCE ON-RESISTANCE (Ω) 6 TJ = 125℃ 0.0 2 0.5 0.45 0.4 0.35 0.3 0.25 IS = 3A 0.2 0.15 0.1 0.05 0.026 0 0 2 4 6 8 10 12 14 16 18 20 IS, SOURCE-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Source Current and Gate Voltage 0 2 4 6 8 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 10 1.8 0.05 VGS = 4.5V RSS(ON), SOURCE-SOURCE ON-RESISTANCE (NORMALIZED) RSS(ON), SOURCE-SOURCE ON-RESISTANCE (Ω) INFORMATION ADVANCE NEW PRODUCT VSS = 5V TJ = 150℃ 0.045 0.04 TJ = 125℃ 0.035 TJ = 85℃ 0.03 TJ = 25℃ 0.025 TJ = -55℃ 0.02 1.6 VGS = 4.5V, IS = 3.0A 1.4 VGS = 3.7V, IS = 3.0A 1.2 VGS = 2.5V, IS = 3.0A 1 0.8 0.6 0.015 0 2 4 6 8 10 12 14 16 18 20 IS, SOURCE CURRENT (A) Figure 5. Typical On-Resistance vs. Source Current and Junction Temperature DMN2036UCB4 Document number: DS39428 Rev. 2 - 2 3 of 7 www.diodes.com -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Junction Temperature October 2017 © Diodes Incorporated 0.08 1.4 VGS(TH), GATE THRESHOLD VOLTAGE (V) RSS(ON), SOURCE-SOURCE ON-RESISTANCE (Ω) 0.07 0.06 0.05 VGS = 2.5V, IS = 3.0A 0.04 0.03 VGS = 3.7V, IS = 3.0A 0.02 VGS = 4.5V, IS = 3.0A 0.01 1.2 0.8 IS = 250μA 0.6 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Junction Temperature 20 10 VGS = 0V 18 16 8 14 6 12 VGS (V) IS, SOURCE CURRENT (A) IS = 1mA 1 0.2 0 10 4 8 VSS = 10V, IS = 6.0A 6 TJ = 150℃ 4 2 TJ = 85℃ TJ = 25℃ TJ = 125℃ 2 TJ = -55℃ 0 0 0 0.4 0.8 1.2 1.6 VSS, SOURCE-SOURCE VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 2 0 5 10 15 20 Qg (nC) Figure 10. Gate Charge 25 30 100 RDS(ON) Limited IS, SOURCE CURRENT (A) INFORMATION ADVANCE NEW PRODUCT DMN2036UCB4 PW = 10ms PW = 1ms PW = 100µs 10 1 PW = 100ms 0.1 TJ(Max) = 150℃ TC = 25℃ Single Pulse DUT on 1*MRP Board VGS = 4.5V PW = 1s PW = 10s DC 0.01 0.1 1 10 VSS, SOURCE-SOURCE VOLTAGE (V) 100 Figure 11. SOA, Safe Operation Area DMN2036UCB4 Document number: DS39428 Rev. 2 - 2 4 of 7 www.diodes.com October 2017 © Diodes Incorporated DMN2036UCB4 400 Single Pulse RθJA = 178℃/W RθJA(t) = RθJA * r(t) TJ - TA = P * RθJA(t) P(pk), PEAK TRANSIENT POWER (W) 300 250 200 150 100 50 0 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 12. Single Pulse Maximum Power Dissipation 1 r(t), TRANSIENT THERMAL RESISTANCE INFORMATION ADVANCE NEW PRODUCT 350 D=0.7 D=0.5 D=0.9 D=0.3 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA(t) = r(t) * RθJA RθJA = 178℃/W Duty Cycle, D = t1 / t2 D=Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMN2036UCB4 Document number: DS39428 Rev. 2 - 2 5 of 7 www.diodes.com October 2017 © Diodes Incorporated DMN2036UCB4 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. X2-WLB1616-4 INFORMATION ADVANCE NEW PRODUCT D Pin1 ID 1 e Ø b (4x) 2 X2-WLB1616-4 A Dim Min Max Typ A -- 0.40 0.37 A1 -- -- 0.15 A2 -- -- 0.22 B E e B A 1 2 A2 A1 b 0.25 0.35 0.30 D 1.58 1.66 1.62 E 1.58 1.66 1.62 e - - 0.65 All Dimensions in mm A Seating Plane Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. X2-WLB1616-4 C Ø D (4x) Dimensions C D Value (in mm) 0.65 0.30 C DMN2036UCB4 Document number: DS39428 Rev. 2 - 2 6 of 7 www.diodes.com October 2017 © Diodes Incorporated DMN2036UCB4 IMPORTANT NOTICE INFORMATION ADVANCE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2017, Diodes Incorporated www.diodes.com DMN2036UCB4 Document number: DS39428 Rev. 2 - 2 7 of 7 www.diodes.com October 2017 © Diodes Incorporated