Diodes MMBTA92-13-F 300v pnp small signal transistor in sot23 Datasheet

MMBTA92
300V PNP SMALL SIGNAL TRANSISTOR IN SOT23
Features
Mechanical Data

BVCEO > 300V






Ideal for Medium Power Amplification and Switching
Complementary NPN Type: MMBTA42
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)


Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish-Matte Tin Plated Leads; Solderable per MILSTD-202, Method 208
Weight: 0.008 grams (Approximate)



SOT23
C
E
C
B
B
E
Top View
Top View
Pin-Out
Symbolhematic
Device Symbol
Symbolhematic
Ordering Information (Notes 4 & 5)
Part Number
MMBTA92-7-F
MMBTA92-13-F
MMBTA92Q-7-F
Notes:
Compliance
AEC-Q101
AEC-Q101
Automotive
Marking
K3R
K3R
K3R
Reel size (inches)
7
13
7
Tape width (mm)
8
8
8
Quantity per reel
3,000
10,000
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
K3R
Date Code Key
Year
Code
Month
Code
2015
C
2016
D
2017
E
2018
F
Jan
1
Feb
2
Mar
3
Apr
4
MMBTA92
Document number: DS30060 Rev. 12 - 2
YM
SOT23
2019
G
May
5
K3R = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: C = 2015)
M = Month (ex: 9 = September)
2020
H
Jun
6
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2021
I
Jul
7
2022
J
Aug
8
2023
K
Sep
9
2024
L
Oct
O
2025
M
Nov
N
2026
N
Dec
D
May 2015
© Diodes Incorporated
MMBTA92
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Value
-300
-300
-5.0
-500
Unit
V
V
V
mA
Value
300
417
-55 to +150
Unit
mW
°C/W
°C
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
RJA
TJ, TSTG
(Note 5)
(Note 5)
ESD Ratings (Note 6)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Value
Unit
JEDEC Class
4,000
400
V
V
3A
C
5. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
6. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 7)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Note:
Symbol
ESD HBM
ESD MM
(@TA = +25°C, unless otherwise specified.)
Symbol
Min
Max
Unit
BVCBO
BVCEO
BVEBO
ICBO
IEBO
-300
-300
-5.0





-250
-100
V
V
V
nA
nA
hFE
25
40
25
VCE(SAT)
VBE(SAT)





-0.5
-0.9
Cobo

6.0
pF
fT
50

MHz

V
V
Test Condition
IC = -100µA, IE = 0
IC = -1.0mA, IB = 0
IE = -100µA, IC = 0
VCB = -200V, IE = 0
VEB = -3.0V, IC = 0
IC = -1.0mA, VCE = -10V
IC = -10mA, VCE = -10V
IC = -30mA, VCE = -10V
IC = -20mA, IB = -2.0mA
IC = -20mA, IB = -2.0mA
VCB = -20V, f = 1.0MHz, IE = 0
VCE = -20V, IC = -10mA,
f = 100MHz
7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
MMBTA92
Document number: DS30060 Rev. 12 - 2
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MMBTA92
1.0
VCE(SAT), COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
PD , POWER DISSIPATION (mW)
300
250
200
150
100
50
0
0.8
0.7
0.6
0.5
0.4
TA = 150°C
0.3
0.2
TA = 25°C
0.1
TA = -50°C
0
0
25
50
75 100 125 150 175
TA, AMBIENT TEMPERATURE (°C)
Fig. 1Power Dissipation
vs. Ambient Temperature
10
1
200
100
1000
IC, COLLECTOR CURRENT (mA)
Fig. 2, Collector Emitter Saturation Voltage
vs. Collector Current
10,000
1.0
VBE(ON), BASE EMITTER VOLTAGE (V)
V CE = 5V
hFE, DC CURRENT GAIN
IC
IB = 10
0.9
350
1,000
T A = 150°C
100
T A = -50°C
T A = 25°C
10
VCE = 5V
0.9
TA = -50°C
0.8
0.7
TA = 25°C
0.6
0.5
TA = 150°C
0.4
0.3
0.2
1
10
1
100
1000
0.1
0.1
IC, COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain vs
Collector Current
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 4, Base Emitter Voltage vs Collector Current
fT, GAIN BANDWIDTH PRODUCT (MHz)
100
VCE = 5V
10
1
10
1
IC, COLLECTOR CURRENT (mA)
Fig. 5, Gain Bandwidth Product vs
Collector Current
MMBTA92
Document number: DS30060 Rev. 12 - 2
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MMBTA92
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version
All 7°
H
K1
GAUGE PLANE
0.25
J
K
a
M
A
L
C
L1
B
D
G
F
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
a
8°
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
X
Note:
Dimensions
Z
X
Y
C
E
C
Value (in mm)
2.9
0.8
0.9
2.0
1.35
E
For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between
device terminals and PCB tracking.
MMBTA92
Document number: DS30060 Rev. 12 - 2
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MMBTA92
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
www.diodes.com
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