NTMFS5C670NL Power MOSFET 60 V, 6.1 mW, 71 A, Single N−Channel Features • • • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb−Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC (Notes 1, 3) TC = 25°C Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State Pulsed Drain Current Value Unit VDSS 60 V VGS ±20 V ID 71 A TC = 100°C TC = 25°C Steady State PD ID Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 3.6 A) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) G (4) A 17 S (1,2,3) PD W 3.6 N−CHANNEL MOSFET 1.8 IDM 440 A TJ, Tstg −55 to +175 °C IS 68 A EAS 166 mJ TL °C 260 MARKING DIAGRAM D 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter D (5) 12 TA = 100°C TA = 25°C, tp = 10 ms 71 A 8.8 mW @ 4.5 V W 61 31 TA = 100°C TA = 25°C 6.1 mW @ 10 V 60 V 50 TC = 100°C TA = 25°C Power Dissipation RqJA (Notes 1 & 2) Symbol ID MAX Symbol Value Unit Junction−to−Case − Steady State RqJC 2.4 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 41 DFN5 (SO−8FL) CASE 488AA STYLE 1 5C670L A Y W ZZ S S S G D 5C670L AYWZZ D D = Specific Device Code = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION See detailed ordering, marking and shipping information on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2016 January, 2016 − Rev. 1 1 Publication Order Number: NTMFS5C670NL/D NTMFS5C670NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 27 VGS = 0 V, VDS = 60 V mV/°C TJ = 25 °C 10 TJ = 125°C 250 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 53 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 1.2 2.0 −4.7 VGS = 10 V ID = 35 A 5.1 6.1 VGS = 4.5 V ID = 35 A 7.0 8.8 gFS VDS = 15 V, ID = 35 A V mV/°C 82 mW S CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 1400 VGS = 0 V, f = 1 MHz, VDS = 25 V 640 pF 15 Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 30 V; ID = 35 A 9.0 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 30 V; ID = 35 A 20 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS 2.5 nC 4.5 VGS = 10 V, VDS = 30 V; ID = 35 A Gate−to−Drain Charge QGD Plateau Voltage VGP 2.0 3.1 td(ON) 11 V SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 4.5 V, VDS = 30 V, ID = 35 A, RG = 2.5 W tf 60 ns 15 4 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD VGS = 0 V, IS = 35 A TJ = 25°C 0.9 TJ = 125°C 0.8 tRR ta tb 1.2 V 34 VGS = 0 V, dIS/dt = 100 A/ms, IS = 35 A QRR 17 ns 17 19 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTMFS5C670NL TYPICAL CHARACTERISTICS ID, DRAIN CURRENT (A) 120 140 4.5 V 6.5 V to 10 V VDS = 5 V 120 ID, DRAIN CURRENT (A) 140 3.8 V 100 80 3.4 V 60 40 3.0 V 20 80 60 TJ = 25°C 40 20 2.6 V 0 TJ = 125°C TJ = −55°C 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1.0 1.5 2.0 2.5 3.0 3.5 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 15 14 TJ = 25°C ID = 35 A 13 12 11 10 9 8 7 6 5 3.5 0.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 100 4.5 5.5 6.5 7.5 8.5 9.5 VGS, GATE VOLTAGE (V) 4.0 10 TJ = 25°C 9 8 VGS = 4.5 V 7 6 VGS = 10 V 5 4 5 15 25 35 45 55 65 75 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.8 VGS = 10 V ID = 35 A TJ = 175°C IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 100000 2.0 1.6 1.4 1.2 1.0 10000 TJ = 125°C 1000 TJ = 85°C 100 0.8 0.6 −50 10 −25 0 25 50 75 100 125 150 175 10 20 30 40 50 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 60 NTMFS5C670NL TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 10000 CISS 1000 COSS 100 CRSS 10 VGS = 0 V TJ = 25°C f = 1 MHz 1 0 10 20 30 40 50 60 10 QT 9 8 7 6 5 QGD 4 QGS 3 VDS = 30 V TJ = 25°C ID = 35 A 2 1 0 0 2 4 6 8 10 12 14 16 18 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 20 t, TIME (ns) 100 IS, SOURCE CURRENT (A) 1000 tr td(on) td(off) 10 VGS = 4.5 V VDS = 30 V ID = 35 A tf 1 10 TJ = 25°C TJ = −55°C 1 1 10 0.3 100 0.6 0.7 0.8 0.9 1.0 Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 IPEAK, DRAIN CURRENT (A) 100 500 ms 10 10 ms 0.1 0.1 0.5 VSD, SOURCE−TO−DRAIN VOLTAGE (V) TC = 25°C VGS ≤ 10 V Single Pulse 1 0.4 RG, GATE RESISTANCE (W) 1000 ID, DRAIN CURRENT (A) TJ = 125°C RDS(on) Limit Thermal Limit Package Limit 1 1 ms 10 TJ = 25°C TJ = 100°C 1 0.1 10 100 1E−5 1E−4 1E−3 1E−2 VDS (V) TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Drain Current vs. Time in Avalanche www.onsemi.com 4 NTMFS5C670NL 100 R(t) (°C/W) 50% Duty Cycle 10 20% 10% 5% 1 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics DEVICE ORDERING INFORMATION Device Marking Package Shipping† NTMFS5C670NLT1G 5C670L DFN5 (Pb−Free) 1500 / Tape & Reel NTMFS5C670NLT3G 5C670L DFN5 (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 NTMFS5C670NL PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE M 2X 0.20 C D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. A 2 B D1 2X 0.20 C 4X E1 q E 2 c 1 2 3 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q A1 4 TOP VIEW C SEATING PLANE DETAIL A 0.10 C A RECOMMENDED SOLDERING FOOTPRINT* 0.10 C SIDE VIEW 0.10 8X b C A B 0.05 c 2X DETAIL A 0.495 4.560 2X MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.30 5.15 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.530 e/2 e L 1 3.200 4 4.530 K E2 1.330 2X PIN 5 (EXPOSED PAD) L1 M 0.905 1 0.965 G 4X D2 1.000 4X 0.750 BOTTOM VIEW 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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