CYStech Electronics Corp. Spec. No. : C830I3 Issued Date : 2012.11.07 Revised Date : Page No. : 1/8 P-Channel Enhancement Mode Power MOSFET MTP4835I3 BVDSS ID RDS(ON)@VGS=-10V, ID=-10A RDS(ON)@VGS=-4.5V, ID=-6A -30V -40A 17mΩ(typ) 26mΩ(typ) Features • Single Drive Requirement • Low On-resistance • Fast switching Characteristic • Pb-free lead plating package Symbol Outline MTP4835I3 G：Gate D：Drain S：Source TO-251AB G D S TO-251S G D S Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=-10V, TC=25°C Continuous Drain Current @VGS=-10V, TC=100°C Continuous Drain Current @VGS=-10V, TA=25°C Continuous Drain Current @VGS=-10V, TA=100°C Pulsed Drain Current TC=25℃ TC=100℃ Power Dissipation TA=25℃ TA=100℃ Single Pulse Avalanche Energy Single Pulse Avalanche Current Operating Junction and Storage Temperature VDS VGS MTP4835I3 ID IDM PD EAS IAS Tj, Tstg Limits -30 ±25 -40 -25 -10 -6.3 -100 *1 50 *4 20 *4 2.5 1.0 25 *2 -10 -55~+150 Unit V A W mJ A °C CYStek Product Specification Spec. No. : C830I3 Issued Date : 2012.11.07 Revised Date : Page No. : 2/8 CYStech Electronics Corp. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 2.5 50 *3 Unit °C/W °C/W Note : *1. Pulse width limited by safe operating area. *2 . Tj=25°C, VDD=-15V, L=0.5mH, RG=25Ω. *3 . The value of Rth,j-a is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The value in any given application depends on the user’s specific board design. *4 . The power dissipation PD is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. It is used to determined the current rating, when this rating falls below the package limit. Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Static BVDSS -30 VGS(th) -1.0 GFS IGSS IDSS IDSS *RDS(ON) *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *VSD *IS *trr *Qrr - Typ. Max. Unit -1.4 12 17 26 -2.5 ±100 -1 -5 25 35 V V S nA 19 8.5 4.9 18 10 56 15 1718 140 114 - -0.79 24 13 -1.2 -10 - μA mΩ Test Conditions VGS=0, ID=-250μA VDS = VGS, ID=-250μA VDS =-10V, ID=-10A VGS=±25 VDS =-30V, VGS =0 VDS =-24V, VGS =0, Tj=55°C VGS =-10V, ID=-10A VGS =-4.5V, ID=-6A nC ID=-10A, VDS=-15V, VGS=-5V ns VDS=-15V, VGS=-10V, RG=6Ω, ID=-1A pF VGS=0V, VDS=-15V, f=1MHz V A ns nC IS=-5A, VGS=0V VD=VG=0, VS=-1V IS=-10A, VGS=0, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTP4835I3 CYStek Product Specification Spec. No. : C830I3 Issued Date : 2012.11.07 Revised Date : Page No. : 3/8 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 90 10V,9V, 8V, 7V, 6V 80 -ID, Drain Current(A) -BVDSS, Normalized Drain-Source Breakdown Voltage 100 5V 70 60 4V 50 40 -VGS=2V 30 3V 20 1.2 1 0.8 0.6 ID=-250μA, VGS=0V 10 0.4 0 0 2 4 6 8 -VDS, Drain-Source Voltage(V) -60 10 Static Drain-Source On-State resistance vs Drain Current 180 1.2 VGS=-2.5V VGS=-3V -VSD, Source-Drain Voltage(V) R DS(ON) , Static Drain-Source On-State Resistance(mΩ) 20 60 100 140 Tj, Junction Temperature(°C) Reverse Drain Current vs Source-Drain Voltage 1000 VGS=-4.5V 100 VGS=-10V VGS=0V 1 Tj=25°C 0.8 Tj=150°C 0.6 0.4 0.2 10 0.01 0.1 1 10 -ID, Drain Current(A) 0 100 5 10 15 -IDR, Reverse Drain Current(A) 200 2 R DS(ON) , Normalized Static DrainSource On-State Resistance 180 ID=-10A 160 140 120 100 80 60 40 VGS=-10V, ID=-10A 1.6 1.2 0.8 0.4 RDS(ON) @Tj=25°C : 17mΩ 20 0 0 0 MTP4835I3 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage R DS(ON) , Static Drain-Source OnState Resistance(mΩ) -20 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) 180 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C830I3 Issued Date : 2012.11.07 Revised Date : Page No. : 4/8 Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage -VGS(th) , Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 C oss 100 Crss 1.4 ID=-250μA 1.2 1 0.8 0.6 0.4 10 0.1 1 10 -VDS, Drain-Source Voltage(V) -60 100 -20 Forward Transfer Admittance vs Drain Current 100 140 10 VDS=-24V -VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance(S) 60 Gate Charge Characteristics 100 10 1 VDS=-10V Pulsed Ta=25°C 0.1 0.01 0.001 8 VDS=-15V 6 VDS=-10V 4 2 ID=-10A 0 0.01 0.1 1 -ID, Drain Current(A) 10 0 100 5 10 15 20 25 30 Qg, Total Gate Charge(nC) 35 40 Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area 100 12 100μs RDS(ON) Limit 10 1ms 10ms 1 100ms 1s 0.1 TA=25°C, Tj=150°, VGS=-10V RθJA=50°C/W, Single Pulse DC -ID, Maximum Drain Current(A) -ID, Drain Current(A) 20 Tj, Junction Temperature(°C) 10 8 6 4 2 TA=25°C, VGS=-10V,RθJA=50°C/W 0 0.01 0.01 MTP4835I3 0.1 1 10 -VDS , Drain-Source Voltage(V) 100 25 50 75 100 125 150 TJ, Junction Temperature(°C) 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C830I3 Issued Date : 2012.11.07 Revised Date : Page No. : 5/8 Typical Characteristics(Cont.) 50 Single Pulse Power Rating, Junction to Ambient (Note on page 2) 50 TJ(MAX) =150°C TA=25°C θJA=50°C/W VDS=-10V 45 40 -ID, Drain Current(A) 40 Power (W) Typical Transfer Characteristics 30 20 10 35 30 25 20 15 10 5 0 0 0.01 0.1 1 Pulse Width(s) 10 100 0 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 Transient Thermal Response Curves r(t), Normalized Transient Thermal Resistance 1 D=0.5 0.2 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=50°C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) Ordering Information Device MTP4835I3B-0-UB-G MTP4835I3S-0-UB-G MTP4835I3 Package TO-251AB (RoHS compliant and halogen-free package) TO-251S (RoHS compliant and halogen-free package) Shipping 80 pcs / tube, 50 tubes / box 80 pcs / tube, 50 tubes / box CYStek Product Specification CYStech Electronics Corp. Spec. No. : C830I3 Issued Date : 2012.11.07 Revised Date : Page No. : 6/8 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTP4835I3 CYStek Product Specification Spec. No. : C830I3 Issued Date : 2012.11.07 Revised Date : Page No. : 7/8 CYStech Electronics Corp. TO-251AB Dimension Marking: Product Name Date Code 4835 □□□□ Style: Pin 1.Gate 2.Drain 3.Source 3-Lead TO-251AB Plastic Package CYStek Package Code: I3 Inches Min. Max. 0.2500 0.2618 0.2047 0.2126 0.5709 0.5866 0.0276 0.0354 0.0199 0.0276 0.0886 0.0925 0.0886 0.0925 0.0169 0.0228 DIM A B C D E F G H Millimeters Min. Max. 6.35 6.65 5.20 5.40 14.50 14.90 0.70 0.90 0.50 0.70 2.25 2.35 2.25 2.35 0.43 0.58 DIM I J K L M N S T Inches Min. Max. 0.0866 0.0945 0.2126 0.2244 0.2992 0.3071 0.0453 0.0492 0.0169 0.0228 0.1181 REF 0.1969 REF 0.1496 REF Millimeters Min. Max. 2.20 2.40 5.40 5.70 7.60 7.80 1.15 1.25 0.43 0.58 3.00 REF 5.00 REF 3.80 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. MTP4835I3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C830I3 Issued Date : 2012.11.07 Revised Date : Page No. : 8/8 TO-251S Dimension Marking : Device Name 4835 Date Code □□□□ 3-Lead TO-251S Plastic Package CYStek Package Code: I3 Style : Pin 1. Gate 2. Drain 3. Source *: Typical Inches Min. Max. 0.2559 0.2638 0.2020 0.2126 0.4094 0.4331 0.0280 0.0319 0.0858 0.0941 0.0858 0.0941 0.0181 0.0220 0.0902 0.0937 DIM A B C E F G H I Millimeters Min. Max. 6.50 6.70 5.13 5.46 10.40 11.00 0.71 0.81 2.18 2.39 2.18 2.39 0.46 0.56 2.29 2.38 DIM J K L M S T U V Inches Min. Max. 0.2362 0.2441 0.1299 0.1457 0.0358 0.0437 0.0181 0.0220 0.1902 REF 0.2106 REF 0.0701 REF 0.0299 REF Millimeters Min. Max. 6.00 6.20 3.30 3.70 0.91 1.11 0.46 0.56 4.83 REF 5.35 REF 1.78 REF 0.76 REF Notes: 1.Controlling dimension: inch. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTP4835I3 CYStek Product Specification