DMJ70H601SV3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS Features and Benefits RDS(ON) max ID Low On-Resistance TC = +25°C High BVDSS Rating for Power Application Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) 0.6Ω @ VGS = 10V 700V 8A Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Case: TO251 (Type HE1) Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Adaptor Terminal Connections: See Diagram LCD & PDP TV Lighting Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.33 grams (Approximate) TO251 (Type HE1) G Bottom View Top View D S Top View Pin Configuration Internal Schematic Ordering Information (Note 4) Part Number DMJ70H601SV3 Notes: Case TO251 (Type HE1) Packaging 75 pieces / tube 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information TO251 (Type HE1) 8N70SV YYWW DMJ70H601SV3 Document number: DS39419 Rev. 3 - 2 = Manufacturer’s Marking 8N70SV = Product Type Marking Code YYWW = Date Code Marking YY or YY= Last Two Digits of Year (ex: 17 = 2017) WW or WW = Week Code (01 to 53) 1 of 7 www.diodes.com April 2017 © Diodes Incorporated DMJ70H601SV3 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Drain-Source Voltage VDSS VGSS Gate-Source Voltage TC = +25°C TC = +100°C Continuous Drain Current (Note 5) VGS = 10V ID Maximum Body Diode Forward Current (Note 6) Value 700 Unit V ±30 V 8 6.4 A A IS IDM Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) A Avalanche Current (Note 7) L = 60mH IAS A Avalanche Energy (Note 7) Peak Diode Recovery dv/dt L = 60mH EAS dv/dt mJ V/ns 7 Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Thermal Resistance, Junction to Ambient (Note 6) RθJA Value 125 50 72 Thermal Resistance, Junction to Case (Note 5) RθJC 1.0 TJ, TSTG -55 to +150 TC = +25°C Total Power Dissipation (Note 5) PD TC = +100°C Operating and Storage Temperature Range Electrical Characteristics Unit W °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit Test Condition BVDSS 700 VGS = 0V, ID = 250µA IDSS 1 V Zero Gate Voltage Drain Current µA VDS = 700V, VGS = 0V Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance IGSS 100 nA VGS = ±30V, VDS = 0V VDS = VGS, ID = 250µA VGS(TH) 2 RDS(ON) VSD 3.4 0.5 4 0.6 V Ω 0.85 1.3 V 686 267 Output Capacitance Ciss Coss pF Reverse Transfer Capacitance Crss 8 2.6 VDS = 50V, f = 1MHz, VGS = 0V Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDD = 560V, ID = 8A, VGS = 10V ns VDD = 350V, VGS = 10V, RG = 4.7Ω, ID =8A Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Gate Resistance RG Total Gate Charge Gate-Source Charge Qg 20.9 Qgs 3.0 Qgd tD(ON) 9.4 Turn-On Delay Time 10 Turn-On Rise Time tR Turn-Off Delay Time tD(OFF) 32 17 261 337 3.0 Gate-Drain Charge tF Body Diode Reverse Recovery Time (TJ = +150°C) Body Diode Reverse Recovery Charge tRR tRR QRR Body Diode Reverse Recovery Charge (TJ = +150°C) QRR Turn-Off Fall Time Body Diode Reverse Recovery Time Notes: 23 4.0 VGS = 10V, ID = 2.1A VGS = 0V, IS = 2.1A ns ns C IS = 8A, dI/dt = 100A/μs C 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz. copper, with minimum recommended pad layout. 7. Guaranteed by design. Not subject to production testing. 8. Short duration pulse test used to minimize self-heating effect. DMJ70H601SV3 Document number: DS39419 Rev. 3 - 2 2 of 7 www.diodes.com April 2017 © Diodes Incorporated DMJ70H601SV3 10.0 5 VGS = 6.0V 9.0 8.0 4 VGS = 8.0V 7.0 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 10V VGS = 7.0V VGS = 10V 6.0 5.0 VGS = 5.0V 4.0 3.0 2.0 VGS = 4.5V 3 2 0.0 TJ = -55oC 0 0 1 2 3 4 5 6 7 8 9 10 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.55 VGS = 10V 0.50 0.45 0.40 0.35 0.30 4 5 6 7 8 4 3 ID = 2.1A 2 1 0 0 2 3 4 5 6 7 8 9 10 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage TJ = 150oC 1.2 TJ = 125oC TJ = 85oC 0.6 TJ = 25oC 0.3 TJ = -55oC 5 10 15 20 25 30 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.5 0.9 3 5 1 VGS = 10V 2 Figure 2. Typical Transfer Characteristic 0.60 0 1 VGS, GATE-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE () TJ = 25oC TJ = 125oC 1.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () TJ = 85oC TJ = 150oC 1 VGS = 4.2V 3 2.5 2 1.5 1 VGS = 10V, ID = 2.1A 0.5 0 0 0 1 2 3 4 5 6 7 8 9 10 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMJ70H601SV3 Document number: DS39419 Rev. 3 - 2 3 of 7 www.diodes.com -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature April 2017 © Diodes Incorporated 5 1.5 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () DMJ70H601SV3 1.2 0.9 0.6 VGS = 10V, ID = 2.1A 0.3 ID = 1mA 3 ID = 250µA 2 1 0 0 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature -50 150 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature 10000 10 f = 1MHz CT, JUNCTION CAPACITANCE (pF) VGS = 0V 9 IS, SOURCE CURRENT (A) 4 8 7 6 5 TJ = 150oC 4 TJ = 3 125oC TJ = 85oC TJ = 25oC 2 TJ = -55oC 1 Ciss 1000 0 100 Coss 10 Crss 1 0 0.3 0.6 0.9 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 1.2 0 10 20 40 60 80 100 120 140 160 180 200 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 100 RDS(ON) Limited 9 PW = 10µs PW = 1µs ID, DRAIN CURRENT (A) 8 VGS (V) 7 6 5 VDS = 560V, ID = 8A 4 3 2 10 PW = 1s 1 PW = 100ms PW = 10ms TJ(Max) = 150℃ TC = 25℃ Single Pulse DUT on Infinite Heatsink VGS = 10V 0.1 1 0 PW = 1ms PW = 100µs 0.01 0 2 4 6 8 10 12 14 16 18 20 22 DMJ70H601SV3 Document number: DS39419 Rev. 3 - 2 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area Qg (nC) Figure 11. Gate Charge 4 of 7 www.diodes.com April 2017 © Diodes Incorporated DMJ70H601SV3 1 r(t), TRANSIENT THERMAL RESISTANCE D=0.9 D=0.7 D=0.5 D=0.3 0.1 D=0.1 D=0.05 0.01 D=0.02 D=0.01 RθJC (t) = r(t) * RθJC RθJC = 1℃/W Duty Cycle, D = t1/t2 D=0.005 D=Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMJ70H601SV3 Document number: DS39419 Rev. 3 - 2 5 of 7 www.diodes.com April 2017 © Diodes Incorporated DMJ70H601SV3 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. TO251 (Type HE1) E L2 L3 b3 c 0 E1 Q P D 0 H D1 0 L1 A2 b L e 01 k DMJ70H601SV3 Document number: DS39419 Rev. 3 - 2 TO251 (Type HE1) Dim Min Max Typ A 2.20 2.40 2.30 A2 0.97 1.17 1.07 b 0.68 0.90 0.78 b3 5.20 5.50 5.33 c 0.43 0.63 0.53 D 5.98 6.22 6.10 D1 5.30 REF e 2.286 BSC E 6.40 6.80 6.60 E1 4.63 5.03 4.83 H 10.00 11.44 11.22 k 0.40REF L 3.90 4.30 4.10 L1 0.85 1.25 1.05 L2 0.88 1.28 1.02 L3 0.75 REF Q 1.65 1.95 1.80 PØ 1.20 θ 5° 9° 7° θ1 5° 9° 7° All Dimensions in mm A 6 of 7 www.diodes.com April 2017 © Diodes Incorporated DMJ70H601SV3 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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