FMX32S Pb Free Plating Product ® Pb FMX32S 20Ampere,200Volt Insulated Fast Recovery Diode for Welding Machine TO-3PF/TO-3PML APPLICATION · · · · · · · Freewheeling, Snubber, Clamp Inversion Welder PFC Plating Power Supply Ultrasonic Cleaner and Welder Converter & Chopper UPS Anode Cathode PRODUCT FEATURE Anode · Ultrafast Recovery Time Internal Configuration · Soft Recovery Characteristics Base Backside · Low Recovery Loss · Low Forward Voltage — · High Surge Current Capability · Low Leakage Current GENERAL DESCRIPTION FMX32S using the lastest FRED FAB process with ultrafast and soft recovery characteristic for welding machine. ABSOLUTE MAXIMUM RATINGS T C =25°C unless otherwise specified Symbol Parameter/Test Conditions Values VR Maximum D.C. Reverse Voltage VRRM M i Maximum Repetitive R titi Reverse R Voltage V lt IF(AV) Average Forward Current TC=110°C, Per Package 20 IF(RMS) RMS Forward Current TC=110°C, Per Diode 14 IFSM Non-Repetitive Surge Forward Current TJ=45°C,t=10ms, 50Hz, Sine Unit 210 TC=110°C, Per Diode V 10 A 100 PD Power Dissipation 83 W TJ Junction Temperature -55 to +150 °C TSTG Storage Temperature Range -55 to +150 °C Torque Rth(J-C) Module-to-Sink Recommended（M3） Junction-to-Case Thermal Resistance, Per Diode Weight 1.1 N•m 1.5 °C /W 5.2 g ELECTRICAL CHARACTERISTICS T C =25°C unless otherwise specified Symbol Parameter/Test Conditions Min. Typ. Max. Unit IRM Maximum Reverse Leakage Current VR =220V VR =220V, TJ = 125°C VF Forward Voltage 10 μA 10 mA IF=10A 0.9 1.1 IF=10A,TJ=125°C 0.8 17 0.95 trr Reverse Recovery Time trr IRRM Reverse Recovery Time IF =10A,VR =100V, 32 ns Maximum Reverse Recovery Current diF/dt = -200A/μs 2.1 A trr IRRM Reverse Recovery Time IF = 10A,VR =100V, diF/dt = -200A/μs ,TJ=125°C 45 5 ns Maximum Reverse Recovery Current Rev.05 © 2006 Thinki Semiconductor Co., Ltd. (IF = 1A, diF/dt = -200A/μs, VR = 30V) V ns A Page 1/3 http://www.thinkisemi.com/ FMX32S ® 80 30 25°C 25 25°C 125°C 125°C 60 trr (ns) IF(A) 20 15 40 10 20 5 Per Diode Per Diode 0 0 0.3 0.6 0.9 1.2 100 1.5 VF(V) 300 400 500 diF/dt（A/μs） Figure 1. Forward Voltage Drop vs Forward Current Figure 2. Reverse Recovery Time vs diF/dt 250 15 25°C 12 25°C 200 125°C 125°C QRRM(nc)) IRRM(A) 200 9 6 150 100 50 3 Per Diode Per Diode 0 0 100 200 300 400 100 500 200 300 400 500 diF/dt（A/μs） diF/dt（A/μs） Figure 3. Reverse Recovery Current vs diF/dt Figure 4. Reverse Recovery Charge vs diF/dt 12 10 DC IF(A) ZthJC (K/W) 8 4 Per Diode 1 0.1 Per Diode 0 0.01 25 50 75 100 125 150 175 TC(℃) Figure 5.Forward current vs.Case temperature Rev.05 © 2006 Thinki Semiconductor Co., Ltd. 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (seconds) Figure 6. Transient Thermal Impedance Page 2/3 http://www.thinkisemi.com/ FMX32S ® Figure 7. Diode Reverse Recovery Test Circuit and Waveform Dimensions in Millimeters Fig8. Package Outline Rev.05 © 2006 Thinki Semiconductor Co., Ltd. Page 3/3 http://www.thinkisemi.com/