N-Channel MOSFET 650V, 7.0A, 1.35Ω General Description Features These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. VDS = 650V ID = 7.0A RDS(ON) ≤ 1.35Ω @ VGS = 10V @ VGS = 10V Applications Power Supply PFC High Current, High Speed Switching D G TO-220F MDF Series S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Symbol Rating Unit VDSS 650 V VGSS o TC=25 C Continuous Drain Current Pulsed Drain Current ID o TC=100 C (1) IDM o TC=25 C Power Dissipation (1) Repetitive Avalanche Energy Peak Diode Recovery dv/dt (3) (4) Single Pulse Avalanche Energy Junction and Storage Temperature Range V A 4.4* A 28* A 42 W 0.33 W/ C EAR 13.1 mJ dv/dt 4.5 V/ns mJ PD o Derate above 25 C ±30 7.0* o EAS 212 TJ, Tstg -55~150 Symbol Rating RθJA 62.5 RθJC 3.01 o C * Id limited by maximum junction temperature Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Jun 2011 Version 2.2 (1) (1) 1 Unit o C/W MagnaChip Semiconductor Ltd. MDF7N65B N-channel MOSFET 650V MDF7N65B Part Number Temp. Range MDF7N65BTH -55~150 C o Package Packing RoHS Status TO-220F Tube Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 650 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.0 - 4.0 IDSS VDS = 650V, VGS = 0V - - 1 µA Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance IGSS V VGS = ±30V, VDS = 0V - - 100 nA RDS(ON) VGS = 10V, ID = 3.5A - 1.15 1.35 Ω gfs VDS = 30V, ID = 3.5A - 8.5 - S - 18.4 - - 4.5 - Dynamic Characteristics Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd - 6.7 - Input Capacitance Ciss - 786 - VDS = 520V, ID = 7.0A, VGS = (3) 10V Reverse Transfer Capacitance Crss - 4.1 - Output Capacitance Coss - 85.4 - Turn-On Delay Time td(on) - 13.6 - - 32.6 - - 57.6 - tf - 38 - IS - 7 - - - 1.4 V - 280 - ns - 4.3 - µC Rise Time Turn-Off Delay Time Fall Time tr td(off) VDS = 25V, VGS = 0V, f = 1.0MHz nC VGS = 10V, VDS = 325V, ID = 7.0A, (3) RG = 25Ω pF ns Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IS = 7.0A, VGS = 0V IF = 7.0A, di/dt = 100A/µs A Note : 1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C. 3. ISD ≤7.0A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C 4. L=8.0mH, IAS=7.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C, Jun 2011 Version 2.2 2 MagnaChip Semiconductor Ltd. MDF7N65B N-channel MOSFET 650V Ordering Information MDF7N65B N-channel MOSFET 650V 2.2 Vgs=4.5V =5.0V =5.5V =6.0V =6.5V =7.0V =8.0V =10.0V =15.0V ID,Drain Current [A] 8 6 2.0 RDS(ON) [Ω ] 10 4 2 1.8 VGS=10.0V VGS=20V 1.6 1.4 Notes 1. 250㎲ Pulse Test 2. TC=25℃ 0 1.2 0 5 10 15 20 3 6 VDS,Drain-Source Voltage [V] 12 ID,Drain Current [A] Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 1.2 3.0 ※ Notes : 1. VGS = 10 V 2. ID = 3.5A 2.5 BVDSS, (Normalized) Drain-Source Breakdown Voltage RDS(ON), (Normalized) Drain-Source On-Resistance 9 2.0 1.5 1.0 0.5 0.0 ※ Notes : 1. VGS = 0 V 2. ID = 250㎂ 1.1 1.0 0.9 0.8 -50 0 50 100 150 -50 0 o 100 150 TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 Breakdown Voltage Variation vs. Temperature ※ Notes : 1. VGS = 0 V 2.250µs Pulse test IDR Reverse Drain Current [A] * Notes ; 1. Vds=30V ID(A) 10 150℃ 25℃ -55℃ 4 10 150℃ 1 0.4 1 6 0.6 25℃ 0.8 1.0 1.2 VSD, Source-Drain Voltage [V] VGS [V] Fig.5 Transfer Characteristics Jun 2011 Version 2.2 50 o TJ, Junction Temperature [ C] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDF7N65B N-channel MOSFET 650V 1800 10 ※ Note : ID = 7.0A Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1600 VGS, Gate-Source Voltage [V] 130V 8 C oss 1400 325V 520V Capacitance [pF] 1200 6 4 C iss 1000 800 600 400 2 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz C rss 200 0 0 0 2 4 6 8 10 12 14 16 18 20 1 22 Fig.7 Gate Charge Characteristics 10 Fig.8 Capacitance Characteristics 2 Operation in This Area is Limited by R DS(on) 10 10 µs 100 µs 1 1s 10 0 D=0.5 0 10 ms 100 ms 10 Zθ JC(t), Thermal Response ID, Drain Current [A] 1 ms 10 DC -1 0.2 0.1 0.05 -1 0.02 10 0.01 Single Pulse TJ=Max rated TC=25℃ 10 -1 10 0 ※ Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC RΘ JC=3.01℃/W single pulse -2 10 10 1 10 -2 2 10 -5 10 VDS, Drain-Source Voltage [V] -4 -3 10 -2 10 -1 10 0 10 10 1 10 t1, Rectangular Pulse Duration [sec] Fig.9 Maximum Safe Operating Area MDF7N65B(TO-220F) Fig.10 Transient Thermal Response Curve MDF7N65B(TO-220F) 8 12000 single Pulse RthJC = 3.01℃/W TC = 25℃ 7 6 ID, Drain Current [A] 10000 8000 Power (W) 10 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] 6000 4000 5 4 3 2 2000 1 0 1E-5 1E-4 1E-3 0.01 0.1 1 0 25 10 Pulse Width (s) 75 100 125 150 TC, Case Temperature [℃] Fig.11 Single Pulse Maximum Power Dissipation Jun 2011 Version 2.2 50 Fig.12 Maximum Drain Current vs. Case Temperature 4 MagnaChip Semiconductor Ltd. MDF7N65B N-channel MOSFET 650V Physical Dimensions 3 Leads, TO-220F Dimensions are in millimeters unless otherwise specified S y mbol A b b1 C D E e F G L L1 Q Q1 ￠R Jun 2011 Version 2.2 Min 4.50 0.63 1.15 0.33 15.47 9.60 Nom Max 4.93 0.91 1.47 0.63 16.13 10.71 2.54 2.34 6.48 12.24 2.79 2.52 3.10 3.00 2.84 6.90 13.72 3.67 2.96 3.50 3.55 5 MagnaChip Semiconductor Ltd. MDF7N65B N-channel MOSFET 650V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Jun 2011 Version 2.2 6 MagnaChip Semiconductor Ltd.