N-Channel MOSFET 500V, 5.0 A, 1.4Ω General Description Features The MDP5N50 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. VDS = 500V ID = 5.0A RDS(ON) ≤ 1.4Ω MDP5N50 is suitable device for SMPS, HID and general purpose applications. @VGS = 10V @VGS = 10V Applications Power Supply PFC Ballast Absolute Maximum Ratings (Ta = 25oC) Characteristics Symbol Rating Unit Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V 5.0 A 3.2 A o TC=25 C Continuous Drain Current o TC=100 C Pulsed Drain Current (1) ID IDM TC=25oC Power Dissipation Derate above 25 oC Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range 20 A 93 W 0.74 W/ oC dv/dt 4.5 V/ns EAS 230 mJ TJ, Tstg -55~150 o Symbol Rating Unit RθJA 62.5 RθJC 1.35 PD C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case(1) Sep 2011. Version 1.2 1 o C/W MagnaChip Semiconductor Ltd. MDP5N50 N-channel MOSFET 500V MDP5N50 Part Number Temp. Range MDP5N50TP MDP5N50TH Package Packing RoHS Status o TO-220 Tube Pb Free o TO-220 Tube Halogen Free -55~150 C -55~150 C Electrical Characteristics (Ta = 25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 500 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 3.0 - 5.0 Drain Cut-Off Current IDSS VDS = 500V, VGS = 0V - - 1 μA Gate Leakage Current IGSS VGS = ±30V, VDS = 0V - - 100 nA RDS(ON) VGS = 10V, ID = 2.5A - 1.15 1.4 Ω gfs VDS = 30V, ID = 2.5A - 5 - S - 12.2 - Drain-Source ON Resistance Forward Transconductance V Dynamic Characteristics Total Gate Charge Qg VDS = 400V, ID = 5.0A, VGS = 10V (3) Gate-Source Charge Qgs - 3.6 - Gate-Drain Charge Qgd - 4.7 - Input Capacitance Ciss - 500 - Reverse Transfer Capacitance Crss - 3 - Output Capacitance Coss - 65 - Turn-On td(on) - 12 - - 24 - - 24 - tf - 22 - IS - 5.0 - - - 1.4 V - 232 - ns - 1.3 - μC Delay Time Rise Time Turn-Off Delay Time Fall Time tr td(off) VDS = 25V, VGS = 0V, f = 1.0MHz nC VGS = 10V, VDS = 250V, ID = 5.0A, RG = 25Ω(3) pF ns Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IS = 5.0A, VGS = 0V IF = 5.0A, dl/dt = 100A/μs(3) A Note : 1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature T J(MAX)=150°C. 3. ISD ≤5.0A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C 4. L=16.5mH, IAS=5.0A, VDD=50V, , Rg =25Ω, Starting TJ=25°C Sep 2011. Version 1.2 2 MagnaChip Semiconductor Ltd. MDP5N50 N-channel MOSFET 500V Ordering Information 2.2 2.1 2.0 1.9 RDS(ON) [Ω ] 10 ID,Drain Current [A] 2.3 Vgs=5.5V =6.0V =6.5V =7.0V =8.0V =10.0V 1 1.8 1.7 VGS=10.0V 1.6 VGS=20V 1.5 1.4 1.3 Notes 1. 250㎲ Pulse Test 2. TC=25 1.2 ℃ 0.1 0.1 1.1 1.0 1 10 0 5 10 VDS,Drain-Source Voltage [V] 20 25 ID,Drain Current [A] Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 1.2 1.8 ※ Notes : BVDSS, (Normalized) Drain-Source Breakdown Voltage ※ Notes : RDS(ON), (Normalized) Drain-Source On-Resistance 15 1. VGS = 10 V 2. ID = 5 A 1.6 1.4 VGS=10V 1.2 VGS=4.5V 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 1. VGS = 0 V 2. ID = 250㎂ 1.1 1.0 0.9 0.8 -50 150 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 Breakdown Voltage Variation vs. Temperature 100 ※ Notes : * Notes ; 1. VDS=30V IDR Reverse Drain Current [A] 1. VGS = 0 V 2. ID = 250㎂ ID [A] 10 150 ℃ 10 25 ℃ -55 ℃ 1 0.0 1 4 5 6 7 8 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-Drain Voltage [V] VGS [V] Fig.5 Transfer Characteristics Sep 2011. Version 1.2 0.2 Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 4 MagnaChip Semiconductor Ltd. MDP5N50 N-channel MOSFET 500V 2.4 MDP5N50 N-channel MOSFET 500V 1000 ※ Note : ID = 5.0A 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Coss VGS, Gate-Source Voltage [V] 800 100V 8 250V Ciss Capacitance [pF] 400V 6 4 600 400 ※ Notes ; 2 1. VGS = 0 V 2. f = 1 MHz Crss 200 0 0 2 4 6 8 10 0 0.1 12 1 Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics 8 2 Operation in This Area is Limited by R DS(on) ID, Drain Current [A] 10 10 s 100 s 1 6 1 ms ID, Drain Current [A] 10 10 ms 10 10 10 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] DC 0 100 ms -1 4 2 Single Pulse TJ=Max rated TC=25 ℃ 10 -2 10 -1 10 0 10 1 10 0 25 2 50 75 100 125 150 TC, Case Temperature [ ] VDS, Drain-Source Voltage [V] ℃ Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs. Case Temperature 10000 single Pulse RthJC = 1.35 /W TC = 25 ℃ ℃ 0 8000 D=0.5 Power (W) Zθ JC(t), Thermal Response 10 0.2 0.1 -1 10 0.05 0.02 0.01 6000 4000 ※ Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC RΘ JC=1.35 /W 2000 ℃ single pulse -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 0 1E-5 1 10 t1, Rectangular Pulse Duration [sec] 1E-3 0.01 0.1 1 10 Pulse Width (s) Fig.12 Single Pulse Maximum Power Dissipation Fig.11 Transient Thermal Response Curve Sep 2011. Version 1.2 1E-4 5 MagnaChip Semiconductor Ltd. MDP5N50 N-channel MOSFET 500V Physical Dimensions 3 Leads, TO-220 Dimensions are in millimeters unless otherwise specified Sep 2011. Version 1.2 6 MagnaChip Semiconductor Ltd. MDP5N50 N-channel MOSFET 500V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Sep 2011. Version 1.2 7 MagnaChip Semiconductor Ltd.