BWTECH MSC39N60X 30v n-channel mosfet Datasheet

MSC39N60X
30V N-Channel MOSFETs
Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
Features
• 30V,115A, RDS(ON) =2.4mΩ@VGS = 10V
• Improved dv/dt capability
• Fast switching
• 100% EAS Guaranteed
• RoHS compliant package
Applications
• MB / VGA / Vcore
• POL Applications
• SMPS 2nd SR
PPAK5X6 Pin Configuration
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
V
Drain Current - Continuous (TC=25°C) (Chip Limitation)
115
A
Drain Current - Continuous (TC=100°C) (Chip Limitation)
72
A
480
A
180
mJ
ID
IDM
EAS
Drain Current - Pulsed
1
2
Single Pulse Avalanche Energy
Publication Order Number: [MSC39N60X]
© Bruckewell Technology Corporation Rev. A -2016
MSC39N60X
30V N-Channel MOSFETs
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
60
A
Power Dissipation (TC=25°C)
135
W
Power Dissipation - Derate above 25°C
1.08
W/°C
TJ
Operating Junction Temperature Range
-55 to +150
°C
TSTG
Storage Temperature Range
-55 to +150
°C
IAS
PD
Single Pulse Avalanched Current
2
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
RΘjA
Thermal Resistance Junction to ambient
--
62
RθJC
Thermal Resistance Junction to Case
--
0.92
Units
°C/W
Electrical Characteristics (TJ=25℃, unless otherwise noted)
Off Characteristics
Symbol
Parameter
Test Conditions
Min
Drain-Source Breakdown Voltage
VGS = VGS, ID = 250uA
BVDSS Temperature Coefficient
Reference to 25°C , ID=1mA
IGSS
Gate-Source Leakage Current
VDS = 0 V , VGS = ±20 V
IDSS
Drain-Source Leakage Current
BVDSS
△BVDSS
/△TJ
On Characteristics
Symbol
Parameter
10
Typ.
Max.
VGS = 10 V, ID = 30 A
1.9
2.4
VGS = 4.5 V , ID = 15 A
2.5
3.3
1.6
2.5
Gate Threshold Voltage
VDS = VGS, ID =-250μA
△VGS(th)
VGS(th) Temperature Coefficient
VDS = VGS, ID =-250μA
gfs
Forward Tranconductance
VDS = 10 V , ID = 2 A
Turn-On Delay Time
tr
Rise Time
tf
Fall Time
Test Conditions
3,4
3,4
Publication Order Number: [MSC39N60X]
1.2
nA
uA
Units
mΩ
V
-5
mV/°C
16.5
S
Min
Typ.
Max.
Units
--
20
40
ns
ID = 1 A , RG = 1 Ω,
--
32
60
ns
VGS = 10 V , VDD = 15V
--
75
130
ns
--
28
55
ns
3,4
3,4
Turn-Off Delay Time
±100
VDS = 24 V , VGS = 0 V , TJ= 125°C
VGS(th)
td(on)
V/°C
1
Drain-Source On-Resistance
td(off)
0.03
Min
Units
V
VDS = 30 V , VGS = 0 V , TJ= 25°C
RDS(on)
Dynamic and switching Characteristics
Symbol
Parameter
Max.
30
Test Conditions
3
Typ.
© Bruckewell Technology Corporation Rev. A -2016
MSC39N60X
30V N-Channel MOSFETs
Dynamic and switching Characteristics
Symbol
Parameter
Qg
Test Conditions
3,4
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
CISS
Input Capacitance
3,4
3,4
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Rg
Total Gate Charge
VDS = 15 V , ID = 24 A,
VGS = 4.5 V
VDS = 25 V
f = 1 MHz , VGS = 0 V
VDS = 0 V , f = 1 MHz , VGS = 0 V
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
Parameter
Test Conditions
IS
Continuous Source Current
VG = VD = 0 V , Force Current
Min
Typ.
Max.
Units
--
40
75
nC
--
6
12
nC
--
19
35
nC
--
4800
8000
pF
--
735
1300
pF
--
420
800
pF
--
1.6
3.5
Ω
Min
Typ.
Max.
Units
--
--
176
A
--
--
352
A
ISM
Pulsed Source Current
VSD
Diode Forward Voltage
VGS = 0 V , IS = 1 A , TJ = 25°C
--
--
1
V
trr
Reverse Recovery Time
VDS = 30 V , IS = 1 A ,
--
49
85
ns
Qrr
Reverse Recovery Charge
di/dt=100A/μs , TJ=25°C
--
18
35
nC
Note :
1.Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. VDD=25V,VGS=10V,L=0.1mH,IAS=65A., Starting TJ=25℃
3.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
4.Essentially independent of operating temperature.
Publication Order Number: [MSC39N60X]
© Bruckewell Technology Corporation Rev. A -2016
MSC39N60X
30V N-Channel MOSFETs
■Characteristics Curve
FIG.1-CONTINUOUS DRAIN CURRENT
VS. TC
FIG.2-NORMALIZED RDSON VS. TJ
FIG.3-NORMALIZED VTH VS. TJ
FIG.4-GATE CHARGE WAVEFORM
FIG.5-NORMALIZED TRANSIENT IMPEDANCE
FIG.6-MAXIMUM SAFE OPERATION AREA
Publication Order Number: [MSC39N60X]
© Bruckewell Technology Corporation Rev. A -2016
MSC39N60X
30V N-Channel MOSFETs
■Characteristics Curve
FIG.7-SWITCHING TIME WAVEFORM
Publication Order Number: [MSC39N60X]
FIG.8-EAS WAVEFORM
© Bruckewell Technology Corporation Rev. A -2016
MSC39N60X
30V N-Channel MOSFETs
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Publication Order Number: [MSC39N60X]
© Bruckewell Technology Corporation Rev. A -2016
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