CSDD-8M CSDD-8N SURFACE MOUNT SILICON CONTROLLED RECTIFIER 8 AMP, 600 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CSDD-8M series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control systems. MARKING: FULL PART NUMBER D2PAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) Peak Repetitive Off-State Voltage RMS On-State Current (TC=90°C) Peak One Cycle Surge, t=10ms I2t Value for Fusing, t=10ms Peak Gate Power, tp=10μs Average Gate Power Dissipation Peak Forward Gate Current, tp=10μs Peak Forward Gate Voltage, tp=10μs SYMBOL CSDD-8M VDRM, VRRM IT(RMS) 600 CSDD-8N UNITS 800 V 8.0 ITSM I2t PGM PG(AV) IFGM A 70 A 24 A2s 40 W 1.0 W 4.0 A 16 V VFGM VRGM 5.0 V Critical Rate of Rise of On-State Current di/dt 50 A/μs Operating Junction Temperature -40 to +125 °C -40 to +150 °C Thermal Resistance TJ Tstg ΘJA 60 °C/W Thermal Resistance ΘJC 2.5 °C/W Peak Reverse Gate Voltage, tp=10μs Storage Temperature ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IDRM, IRRM IDRM, IRRM IGT Rated VDRM, VRRM Rated VDRM, VRRM, TC=125°C VD=12V, RL=10Ω 3.0 IH VGT IT=100mA VTM VD=12V, RL=10Ω ITM=16A, tp=380μs dv/dt VD=2 /3 VDRM, TC=125°C 200 MAX UNITS 10 μA 2.0 mA 15 mA 7.3 20 mA 0.9 1.5 V 1.3 1.8 V V/μs R2 (17-February 2010) CSDD-8M CSDD-8N SURFACE MOUNT SILICON CONTROLLED RECTIFIER 8 AMP, 600 THRU 800 VOLTS D2PAK CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Anode 3) Gate 4) Anode MARKING: FULL PART NUMBER R2 (17-February 2010) w w w. c e n t r a l s e m i . c o m