Kexin AO3424-HF N-channel mosfet Datasheet

MOSFET
SMD Type
N-Channel MOSFET
AO3424-HF (KO3424-HF)
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
● ID = 3.8 A (VGS = 10 V)
1
● RDS(ON) < 55mΩ (VGS = 10V)
0.55
● VDS (V) = 30V
+0.1
1.3 -0.1
+0.1
2.4 -0.1
0.4
3
■ Features
2
+0.1
0.95 -0.1
+0.1
1.9 -0.1
● RDS(ON) < 65mΩ (VGS = 4.5V)
+0.05
0.1 -0.01
+0.1
0.97 -0.1
● RDS(ON) < 85mΩ (VGS = 2.5V)
0-0.1
Pb−Free Lead Finish
+0.1
0.38 -0.1
● Pb−Free Package May be Available. The G−Suffix Denotes a
1. Gate
2. Source
3. Drain
D
G
S
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
±12
Continuous Drain Current
TA=25℃
TA=70℃
Pulsed Drain Current
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Junction Temperature
Storage Temperature Range
ID
IDM
TA=25℃
TA=70℃
t ≤ 10s
Steady-State
PD
RthJA
Unit
V
3.8
3.1
A
15
1.4
0.9
W
90
125
RthJC
80
TJ
150
Tstg
-55 to 150
℃/W
℃
www.kexin.com.cn
1
MOSFET
SMD Type
N-Channel MOSFET
AO3424-HF (KO3424-HF)
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Drain-Source Breakdown Voltage
VDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
Gate Threshold Voltage
IGSS
VGS(th)
Test Conditions
ID=250 uA, VGS=0V
Min
Typ
VDS=30V, VGS=0V
1
VDS=30V, VGS=0V, TJ=55℃
5
VDS=0V, VGS=±12V
VDS=VGS , ID=250μA
On state drain current
RDS(On)
ID(ON)
Forward Transconductance
gFS
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Gate Resistance
Rg
Total Gate Charge
(10V)
Total Gate Charge
(4.5V)
VGS=10V, ID=3.8A
0.5
VGS=2.5V, ID=1A
85
VGS=10V, VDS=5V
VDS=5V, ID=3.8A
14
285
VGS=0V, VDS=15V, f=1MHz
25
45
10
25
VGS=0V, VDS=0V, f=1MHz
2.1
6.5
10
4.7
td(on)
3.5
Turn-On Rise Time
tr
Turn-Off DelayTime
td(off)
Maximum Body-Diode Continuous Current
VGS=10V, VDS=15V, RL=3.95Ω,RG=3Ω
IF= 3.8A, dI/dt= 100A/us
IS=1A,VGS=0V
* The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max.
■ Marking
Marking
AT** F
www.kexin.com.cn
Ω
nC
1.5
ns
17.5
2.5
IS
VSD
pF
12
0.95
Turn-On DelayTime
Qrr
S
185
VGS=10V, VDS=15V, ID=3.8A
mΩ
A
1.6
Diode Forward Voltage
2
15
Qgd
Body Diode Reverse Recovery Charge
V
65
Gate Drain Charge
tf
nA
1.5
VGS=4.5V, ID=3.5A
Qgs
trr
±100
84
TJ=125℃
Gate Source Charge
Turn-Off Fall Time
uA
55
Qg
Body Diode Reverse Recovery Time
Unit
V
VGS=10V, ID=3.8A
Static Drain-Source On-Resistance
Max
30
8.5
11
2.6
3.5
nC
1.5
A
1
V
MOSFET
SMD Type
N-Channel MOSFET
AO3424-HF (KO3424-HF)
■ Typical Characterisitics
15
10
10V
3V
12
2.5V
8
4.5V
9
6
ID(A)
ID (A)
VDS=5V
6
VGS=2.0V
125°C
4
25°C
2
3
0
0
0
1
2
3
4
0
5
80
1
1.5
2
2.5
3
Normalized On-Resistance
1.8
VGS=2.5V
70
RDS(ON) (mΩ
Ω)
0.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
60
VGS=4.5V
50
40
VGS=10V
VGS=4.5V
ID=3.5A
1.6
1.4
VGS=10V
17
ID=3.8A
5
1.2
VGS=2.5V
ID=1A
1
0.8
30
0
2
0
6
8
10
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
120
4
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1.0E+02
ID=3.8A
1.0E+01
100
80
60
IS (A)
RDS(ON) (mΩ
Ω)
1.0E+00
125°C
1.0E-01
125°C
1.0E-02
1.0E-03
40
25°C
25°C
1.0E-04
1.0E-05
20
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
www.kexin.com.cn
3
MOSFET
SMD Type
N-Channel MOSFET
AO3424-HF (KO3424-HF)
■ Typical Characterisitics
10
400
VDS=15V
ID=3.8A
350
300
Capacitance (pF)
VGS (Volts)
8
6
4
250
Ciss
200
150
100
2
Coss
50
0
Crss
0
0
2
4
6
8
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
12
0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
10000
100.0
TA=25°C
ID (Amps)
RDS(ON)
limited
10µs
100µs
1.0
0.1
1ms
10ms
TJ(Max)=150°C
TA=25°C
Power (W)
1000
10.0
10
10s
DC
0.0
0.01
0.1
1
VDS (Volts)
.
10
1
0.00001
100
Zθ JA Normalized Transient
Thermal Resistance
1
0.001
0.1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1000
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=125°C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
100
www.kexin.com.cn
100
1000
Similar pages