Spec. No. : C975H8 Issued Date : 2016.08.01 Revised Date : Page No. : 1/11 CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET MTB050P10H8 Features BVDSS ID@VGS=-10V, TC=25°C -100V ID@VGS=-10V, TA=25°C VGS=-10V, ID=-15A -4.4A 39.5mΩ VGS=-4.5V, ID=-12A 45.3mΩ RDSON(TYP) • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Pb-free lead plating and Halogen-free package Symbol -20A Outline DFN5×6 MTB050P10H8 Pin 1 D D D D D D S D D G S S S S G G：Gate D：Drain S：Source S Pin 1 Ordering Information Device MTB050P10H8-0-T6-G Package DFN5×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTB050P10H8 CYStek Product Specification Spec. No. : C975H8 Issued Date : 2016.08.01 Revised Date : Page No. : 2/11 CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=-10V Continuous Drain Current @ TC=100°C, VGS=-10V Continuous Drain Current @ TA=25°C, VGS=-10V Continuous Drain Current @ TA=70°C, VGS=-10V Pulsed Drain Current Avalanche Current@L=1mH Avalanche Energy @ L=2mH, ID=-20A, VDD=-50V TC=25℃ TC=100℃ Total Power Dissipation TA=25°C TA=70°C 10s VDS VGS (Note1) (Note1) (Note2) (Note2) (Note3) (Note4) (Note4) (Note1) (Note1) (Note2) (Note2) Operating Junction and Storage Temperature Range -100 ±20 -20 -12.7 ID IDSM -7.4 -5.9 IDM IAS EAS Tj, Tstg Unit V -4.4 -3.5 -80 -20 400 42 16.8 PD PDSM Steady State 5.4 1.9 3.4 1.2 -55~+150 A mJ W °C Thermal Data Parameter Thermal Resistance, Junction-to-case Thermal Resistance, Junction-to-ambient Symbol Rth,j-c (Note2) t≤10s Steady State Rth,j-a Typical Maximum 2.5 3 18 23 50 65 Unit °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. 3. Pulse width limited by junction temperature TJ(MAX)=150°C. 4. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 100% tested by conditions of L=1mH, IAS=-20A, VGS=-10V, VDD=-50V. Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS *1 IGSS IDSS RDS(ON) *1 MTB050P10H8 Min. Typ. Max. -100 -1 - 23 39.5 45.3 -2.5 ±100 -1 -10 50 60 Unit V S nA μA mΩ Test Conditions VGS=0V, ID=-250μA VDS = VGS, ID=-250μA VDS =-15V, ID=-10A VGS=±20V VDS =-80V, VGS =0V VDS =-80V, VGS =0, Tj=70°C VGS =-10V, ID=-15A VGS =-4.5V, ID=-12A CYStek Product Specification CYStech Electronics Corp. Dynamic *4 Ciss Coss Crss Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Rg Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr - 2191 159 65 40.7 7.2 4.0 13.4 23.6 68.6 21.2 4 - -0.71 28.4 40.9 -20 -80 -1 - Spec. No. : C975H8 Issued Date : 2016.08.01 Revised Date : Page No. : 3/11 pF VDS=-50V, VGS=0V, f=1MHz nC VDS=-80V, VGS=-10V, ID=-15A ns VDS=-50V, ID=-15A, VGS=-10V RG=2.7Ω Ω f=1MHz A V ns nC IS=-2A, VGS=0V IF=-15A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. *4.Guaranteed by design, not subject to production testing. MTB050P10H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C975H8 Issued Date : 2016.08.01 Revised Date : Page No. : 4/11 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 70 -I D, Drain Current(A) 1.4 10V 9V 8V 7V 6V 5V 60 50 -BVDSS, Normalized Drain-Source Breakdown Voltage 80 4V 40 3.5 V 30 20 3V 10 1.2 1 0.8 ID=-250μA, VGS=0V 0.6 -VGS=2.5V 0.4 0 0 2 4 6 8 -VDS, Drain-Source Voltage(V) -75 -50 -25 10 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 100 -VSD, Source-Drain Voltage(V) R DS(ON), Static Drain-Source On-State Resistance(mΩ) 1.2 VGS=-4.5V VGS=-10V VGS=0V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 10 0.1 1 10 -ID, Drain Current(A) 0 100 2 4 6 8 -IDR, Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 500 2.4 450 R DS(ON), Normalized Static DrainSource On-State Resistance R DS(ON), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=-15A 400 350 300 250 200 150 100 50 2 VGS=-10V, ID=-15A 1.6 1.2 0.8 0.4 RDS(ON) @ Tj=25°C : 39.5mΩ (typ.) 0 0 0 MTB050P10H8 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C975H8 Issued Date : 2016.08.01 Revised Date : Page No. : 5/11 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage -VGS(th) , Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 C oss 100 Crss 1.4 1.2 ID=-1mA 1 0.8 0.6 ID=-250μA 0.4 0.2 0 10 0 5 10 15 20 25 -VDS, Drain-Source Voltage(V) -75 -50 -25 30 50 75 100 125 150 175 Gate Charge Characteristics 10 100 RDSON Limited 10 -VGS, Gate-Source Voltage(V) -I D, Drain Current (A) 25 Tj, Junction Temperature(°C) Maximum Safe Operating Area 100μs 1 1m 10ms 100ms 0.1 TA=25°C, VGS=-10V,Tj=150°C RθJA=65°C/W, Single Pulse 1s DC 0.01 0.01 0.1 1 10 100 -VDS, Drain-Source Voltage(V) 8 6 4 VDS=-80V ID=-15A 2 0 0 1000 5 10 15 20 25 30 35 Qg, Total Gate Charge(nC) 40 45 Forward Transfer Admittance vs Drain Current Maximum Drain Current vs Junction Temperature 100 GFS, Forward Transfer Admittance(S) 5 -I D, Maximum Drain Current(A) 0 4 3 2 1 TA=25°C, VGS=-10V, RθJA=65°C/W 0 25 MTB050P10H8 50 75 100 125 150 Tj, Junction Temperature(°C) 175 VDS=-10V 10 VDS=-15V 1 0.1 0.01 0.001 Pulsed Ta=25°C 0.01 0.1 1 -ID, Drain Current(A) 10 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C975H8 Issued Date : 2016.08.01 Revised Date : Page No. : 6/11 Typical Characteristics(Cont.) Single Pulse Maximum Power Dissipation Typical Transfer Characteristics 80 300 VDS=-10V 250 TJ(MAX) =150°C TA=25°C RθJA=65°C/W 60 Power (W) -I D, Drain Current(A) 70 50 40 30 200 150 100 20 50 10 0 0 1 2 3 4 5 6 -VGS, Gate-Source Voltage(V) 7 0 0.0001 0.001 8 Maximum Drain Current vs Case Temperature 0.1 1 Pulse Width(s) 10 100 1000 Maximum Safe Operating Area 25 100 RDSON Limited 20 -I D, Drain Current (A) -I D, Maximum Drain Current(A) 0.01 15 10 5 10 100μs 1ms 10ms 1 VGS=-10V, RθJC=3°C/W TC=25°C, VGS=-10V,Tj=150°C RθJC=3°C/W, Single Pulse 0 100ms DC 0.1 25 50 75 100 125 TC , Case Temperature(°C) 150 175 0.1 1 10 100 -VDS, Drain-Source Voltage(V) Single Pulse Maximum Power Dissipation 1000 Power Derating Curve 50 600 45 TJ(MAX) =150°C TC=25°C RθJC=3°C/W 400 PD, Power Dissipation(W) Power (W) 500 300 200 100 0 0.0001 MTB050P10H8 40 35 30 25 20 15 10 5 0 0.001 0.01 0.1 Pulse Width(s) 1 10 0 25 50 75 100 125 TC, Case Temperature(℃) 150 175 CYStek Product Specification Spec. No. : C975H8 Issued Date : 2016.08.01 Revised Date : Page No. : 7/11 CYStech Electronics Corp. Typical Characteristics(Cont.) Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM -TA=PDM *RθJA(t) 4.RθJA=65°C/W 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 1.RθJC (t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=3 °C/W 0.1 0.1 0.05 0.02 0.01 0.01 1.E-04 MTB050P10H8 Single Pulse 1.E-03 1.E-02 1.E-01 t1, Square Wave Pulse Duration(s) 1.E+00 1.E+01 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C975H8 Issued Date : 2016.08.01 Revised Date : Page No. : 8/11 Recommended Soldering Footprint & Stencil Design unit : mm MTB050P10H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C975H8 Issued Date : 2016.08.01 Revised Date : Page No. : 9/11 Reel Dimension Carrier Tape Dimension Pin #1 MTB050P10H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C975H8 Issued Date : 2016.08.01 Revised Date : Page No. : 10/11 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB050P10H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C975H8 Issued Date : 2016.08.01 Revised Date : Page No. : 11/11 DFN5×6 Dimension Marking : Device Name Date Code B050 P10 8-Lead DFN5×6 Plastic Package CYS Package Code : H8 Millimeters Min. Max. 0.900 1.000 0.254 REF 4.944 5.096 5.974 6.126 3.910 4.110 3.375 3.575 4.824 4.976 5.674 5.826 DIM A A3 D E D1 E1 D2 E2 Inches Min. Max. 0.035 0.039 0.010 REF 0.195 0.201 0.235 0.241 0.154 0.162 0.133 0.141 0.190 0.196 0.223 0.229 DIM k b e L L1 H θ Millimeters Min. Max. 1.190 1.390 0.350 0.450 1.270 TYP. 0.559 0.711 0.424 0.576 0.574 0.726 10° 12° Inches Min. Max. 0.047 0.055 0.014 0.018 0.050 TYP. 0.022 0.028 0.017 0.023 0.023 0.029 10° 12° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB050P10H8 CYStek Product Specification