Single N-channel Trench MOSFET 100V, 40A, 8.7mΩ General Description Features The MDF1922 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDF1922 is suitable device for Synchronous Rectification for Server / Adapter and general purpose applications. VDS = 100V ID = 40A @VGS = 10V RDS(ON) < 8.7 mΩ @VGS = 10V 100% UIL Tested D G G D S TO-220F S Absolute Maximum Ratings (Ta = 25oC) Characteristics Symbol Rating Unit Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V TC=25oC Continuous Drain Current (1) 40 ID o TC=100 C 26 Pulsed Drain Current IDM o TC=25 C Power Dissipation A 160 28 PD TC=100oC W 12 Single Pulse Avalanche Energy Junction and Storage Temperature Range EAS(2) 400 TJ, Tstg -55~150 Symbol Rating RθJA 62.5 RθJC 4.5 mJ o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Jan. 2015. Rev 1.0 1 Unit o C/W MagnaChip Semiconductor Ltd. MDF1922 – Single N-Channel Trench MOSFET 100V MDF1922 Part Number Temp. Range MDF1922TH o -55~150 C Package Packing RoHS Status TO-220F Tube Halogen Free Electrical Characteristics (TJ =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 100 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 2.0 - 4.0 V Drain Cut-Off Current IDSS VDS = 80V, VGS = 0V - - 1.0 Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1 RDS(ON) VGS = 10V, ID = 50A - 7.3 8.7 mΩ gfs VDS = 10V, ID = 50A - 60 - S - 54.5 - - 16.4 - - 10.3 - - 3500 - - 16 - Drain-Source ON Resistance Forward Transconductance μA Dynamic Characteristics Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss VDS = 50V, ID = 50A, VGS = 10V VDS = 40V, VGS = 0V, f = 1.0MHz Reverse Transfer Capacitance Crss Output Capacitance Coss - 720 - Turn-On Delay Time td(on) - 13.8 - - 13.0 - - 39.0 - - 14.0 - Rise Time Turn-Off Delay Time Fall Time tr td(off) VGS = 10V, VDS = 50V, ID = 50A , RG = 3.0Ω tf nC pF ns Rg f=1 MHz - 2.5 - Ω Source-Drain Diode Forward Voltage VSD IS = 50A, VGS = 0V - 0.9 1.2 V Body Diode Reverse Recovery Time trr - 62.0 ns - 197.0 nC Gate Resistance Drain-Source Body Diode Characteristics IF = 50A, dl/dt = 150A/μs Body Diode Reverse Recovery Charge Qrr Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited 2. EAS is tested at starting Tj = 25℃, L = 3.5mH, IAS = 15.0A, VGS = 10V. Jan. 2015. Rev 1.0 2 MagnaChip Semiconductor Ltd. MDF1922 – Single N-Channel Trench MOSFET 100V Ordering Information 7.6 10 V Drain-Source On-Resistance [mΩ] 8.0 V 180 6.0 V 7.0 V ID Drain Current [A] 160 140 5.0 V 120 100 4.5 V 80 60 40 4.0 V 7.5 7.4 VGS = 10V 7.3 7.2 7.1 20 7.0 0 0 1 2 3 4 5 6 7 0 8 20 40 60 80 100 120 140 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 2.5 50 ※ Notes : ※ Notes : 45 1. VGS = 10 V 2. ID = 50 A 2.0 RDS(ON) [mΩ ], Drain-Source On-Resistance RDS(ON), (Normalized) Drain-Source On-Resistance 160 ID, Drain Current [A] VDS, Drain-Source Voltage [V] 1.5 1.0 0.5 ID = 50A 40 35 30 25 20 15 TA = 25℃ 10 5 0.0 -50 0 -25 0 25 50 75 100 125 3 150 4 5 6 7 8 9 10 VGS, Gate to Source Volatge [V] o TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage 80 ※ Notes : 70 IDR Reverse Drain Current [A] 80 ID Drain Current [A] ※ Notes : VDS = 10 V 60 o TC = 25 C 40 20 VGS = 0V 60 50 40 TC = 25℃ 30 20 10 0 0.0 0 0 1 2 3 4 5 6 7 8 Fig.5 Transfer Characteristics Jan. 2015. Rev 1.0 0.3 0.6 0.9 1.2 1.5 VSD, Source-Drain Voltage [V] VGS, Gate-Source Voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDF1922 – Single N-Channel Trench MOSFET 100V 200 ※ Note : ID = 50A Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VDS = 50V Capacitance [pF] VGS, Gate-Source Voltage [V] Ciss 4000 8 6 4 3000 ※ Notes ; Coss 2000 1. VGS = 0 V 2. f = 1 MHz 1000 2 Crss 0 0 0 0 10 20 30 40 50 5 10 60 15 20 25 30 35 40 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics 50 45 2 40 ID, Drain Current [A] ID, Drain Current [A] 10 100 us 10 1 1 ms Operation in This Area is Limited by R DS(on) 10 ms 10 0 100 ms 10 30 25 20 15 10 1000 ms DC Single Pulse TJ=Max rated TC=25℃ 35 5 -1 10 -1 10 0 10 1 10 0 25 2 50 75 100 125 150 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] Fig.10 Maximum Drain Current vs. Case Temperature Fig.9 Maximum Safe Operating Area 1 D=0.5 10 0.2 0.1 0 0.05 -1 10 -2 10 0.02 0.01 Zθ JC (t), Thermal Response 10 ※ Notes : -3 10 Duty Factor, D=t 1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC single pulse -4 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve Jan. 2015. Rev 1.0 4 MagnaChip Semiconductor Ltd. MDF1922 – Single N-Channel Trench MOSFET 100V 5000 10 MDF1922 – Single N-Channel Trench MOSFET 100V Package Dimension 3 Leads, TO-220F Dimensions are in millimeters unless otherwise specified Jan. 2015. Rev 1.0 5 MagnaChip Semiconductor Ltd. MDF1922 – Single N-Channel Trench MOSFET 100V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Jan. 2015. Rev 1.0 6 MagnaChip Semiconductor Ltd.