HY10N65T / HY10N65FT 650V / 10A 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A N-Channel Enhancement Mode MOSFET Features • • • • • • Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS In compliance with EU RoHs 2002/95/EC Directives 1 G 23 D S Mechanical Information 1 G 23 D S ITO-220AB TO-220AB • Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 2 Drain Marking & Ordering Information TYPE MARKING PACKAGE PACKING HY10N65T 10N65T TO-220AB 50PCS/TUBE HY10N65FT 10N65FT ITO-220AB 50PCS/TUBE 1 Gate Gate 3 Source Absolute Maximum Ratings (TC=25OC unless otherwise noted ) P a ra me te r S ymb o l HY1 0 N6 5 T HY1 0 N6 5 F T Uni ts D ra i n-S o urc e Vo lta g e V DS 650 V Ga te -S o urc e Vo lta g e V GS +3 0 V C o nti nuo us D ra i n C urre nt T C =2 5 O C P uls e d D ra i n C urre nt 1 ) Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r T C =2 5 O C Avalanche Energy with Single Pulse IAS=10A, VDD=90V, L=12mΗ Op e ra ti ng J unc ti o n a nd S to ra g e Te mp e ra ture Ra ng e ID 10 10 A ID M 40 40 A PD 156 1 .2 5 50 0 .4 W E AS 600 mJ T J ,T S TG -5 5 to +1 5 0 O C Note : 1. Maximum DC current limited by the package Thermal Characteristics PA RA M E TE R S ym b o l HY1 0 N6 5 T HY1 0 N6 5 F T Uni ts Junction-to-Case Thermal Resistance R θJC 0 .8 2 .5 O C /W Junction-to Ambient Thermal Resistance R θJA 6 2 .5 100 O C /W COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE REV1.0 : AUG. 2011 PAGE . 1 HY10N65T / HY10N65FT Electrical Characteristics ( TC=25OC unless otherwise noted ) P a ra m e te r S ymb o l Te s t C o nd i ti o n Mi n. Typ . Ma x. Uni ts D ra i n-S o urc e B re a k d o wn Vo lta g e B V DSS V GS =0 V, I D =2 5 0 uA 650 - - V Ga te Thre s ho ld Vo lta g e V GS (th) V D S =V GS , I D =2 5 0 uA 2 .0 - 4 .0 V R D S (o n) VGS= 10V, I D= 5.0A - 0.84 1.0 Ω I DSS VDS=650V, VGS=0V - - 10 uA I GS S V GS =+3 0 V, V D S =0 V - - +1 0 0 nΑ - 3 6 .4 48 - 7 .8 - S ta ti c D ra i n-S o urc e On-S ta te Re s i s ta nc e Ze ro Ga te Vo lta g e D ra i n C urr e nt Gate Body Leakage Dynamic To ta l Ga te C ha r g e Qg Ga te -S o urc e C ha rg e Q gs Ga te -D ra i n C ha rg e Q gd - 10.2 - Turn- On D e la y Ti me t d (o n) - 13.8 18 - 21.6 32 - 52 88 f - 2 4 .8 36 - 11 5 0 1850 - 145 175 - 4.5 12 Turn- On Ri s e Ti m e Turn- Off D e la y Ti m e t t r d (o ff) Turn- Off F a ll Ti m e t Inp ut C a p a c i ta nc e C i ss Outp ut C a p a c i ta nc e C oss Re ve rs e Tra ns fe r C a p a c i ta nc e C rs s V D S = 5 2 0 V, ID = 1 0 A , V GS =1 0 V VDD=325V, I D =10A V GS =1 0 V, RG=25Ω V D S =2 5 V, V GS =0 V f=1 .0 MH Z nC ns pF S o urc e -D ra i n D i o d e Ma x. D i o d e F o rwa rd C urre nt IS - - - 10 A M a x.P uls e d S o urc e C urre nt I SM - - - 40 A D i o d e F o rwa rd Vo lta g e V SD IS = 1 0 A , V GS =0 V - - 1 .4 V Re ve rs e Re c o ve ry Ti me t - 440 - ns Re ve rs e Re c o ve ry C ha rg e Q V GS =0 V, IF = 1 0 A d i /d t=1 0 0 A /us - 4 .3 - uC rr rr NOTE : Plus Test : Pluse Width < 300us, Duty Cycle < 2%. REV1.0 : AUG. 2011 PAGE . 2 HY10N65T / HY10N65FT Typical Characteristics Curves ( TC=25℃ ℃, unless otherwise noted) 100 VGS= 20V~ 7.0V ID - Drain Source Current (A) ID - Drain-to-Source Current (A) 20 15 6.0V 10 5.0V 5 VDS =50V 10 TJ = 125oC -55oC 0.1 0 0 10 20 30 40 1 50 VDS - Drain-to-Source Voltage (V) Fig.1 Output Characteristric 8 3 Ω) RDS(ON) - On Resistance( Resistance(Ω Ω) RDS(ON) - On Resistance( Resistance(Ω 2 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) Fig.2 Transfer Characteristric 1.6 1.4 1.2 1 VGS=10V 0.8 VGS = 20V ID =5.0A 2.5 2 1.5 1 0.5 0 0.6 0 2 4 6 8 10 12 14 3 16 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Fig.3 On-Resistance vs Drain Current Fig.4 On-Resistance vs Gate to Source Voltage 2000 12 f = 1MHz VGS = 0V VGS - Gate-to-Source Voltage (V) C - Capacitance (pF) 25oC 1 1500 Ciss 1000 500 Coss Crss 0 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) Fig.5 Capacitance Characteristic REV 1.0 : AUG. 2011 30 ID =10A VDS=520V 10 VDS=325V 8 VDS=130V 6 4 2 0 0 5 10 15 20 25 30 35 40 Qg - Gate Charge (nC) Fig.6 Gate Charge Characteristic PAGE. 3 HY10N65T / HY10N65FT Typical Characteristics Curves ( TC=25℃ ℃, unless otherwise noted) 1.2 VGS =10 V ID =5.0A 2.1 BVDSS - Breakdown Voltage (Normalized) RDS(ON) - On-Resistance (Normalized) 2.5 1.7 1.3 0.9 0.5 ID = 250µA 1.1 1 0.9 0.8 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.7 On-Resistance vs Junction Temperature -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.8 Breakdown Voltage vs Junction Temperature IS - Source Current (A) VGS = 0V 10 TJ = 125oC 25oC 1 -55oC 0.1 0.01 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) Fig.9 Body Diode Forward Voltage Characteristic REV 1.0 : AUG. 2011 PAGE. 4