JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate MOSFETS CJD4435 P-Channel 30-V(D-S) MOSFET V(BR)DSS RDS(on)MAX 24()-' -30 ' 35()- ' ID TO-251-3L -9.1$ 1. GATE 2. DRAIN FEATURE TrenchFET Power MOSFET 3. SOURCE 1 APPLICATIONS z Load Switch z Battery Switch MARKING 2 3 EQUIVALENT CIRCUIT CJD4435= Device code Solid dot = Green molding compound device, if none, the normal device XXX=Date Code Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 ID -9.1 Continuous Drain Current Power Dissipation V 15 (note 2, Tc=25℃) Thermal Resistance from Junction to Ambient (t≤10S) A 1 (note 1, Ta=25℃) PD Maximum Power Dissipation Unit RθJA 125 Operating Junction Temperature TJ 150 Storage Temperature Tstg -55 ~+150 W ℃/W ℃ . www.cj-elec.com 1 D,Apr,2016 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max -1.5 -3 Unit Static Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA -30 VGS(th) VDS =VGS, ID =-250µA -1 Gate-source leakage IGSS VDS =0V, VGS =±20V ±100 nA Zero gate voltage drain current IDSS VDS =-30V, VGS =0V -1 µA Gate-source threshold voltage Drain-source on-state resistance (note 3) RDS(on) Forward transconductance (note 3) gfs VGS =-10V, ID =-9.1A 0.018 0.024 VGS =-4.5V, ID =-6.9A 0.024 0.035 VDS =-10V, ID =-9.1A 20 V Ω S Dynamic (note 4) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time td(on) Rise time Turn-off delay time Fall time Gate Resistance tr td(off) tf 1350 VDS =-15V,VGS =0V,f =1MHz pF 215 185 15 VDD=-15V, 15 RL=15Ω, ID≈-1A, 70 VGEN=-10V,RG=1Ω Rg f =1MHz ns 25 5.8 Ω Drain-source Body diode characteristics Body diode voltage VSD IS=-2A, VGS =0 -1.2 V Notes : 1. This test is performed with no heat sink at Ta=25℃. 2. This test is performed with inifite heat sink at Tc=25℃. 3. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%. 4. Guaranteed by design, not subject to production testing. www.cj-elec.com 2 D,Apr,2016 7\SLFDO&KDUDFWHULVWLFV Transfer Characteristics Output Characteristics -24 Ta=25℃ Pulsed -24 VGS=-3V,-3.5V,-4V,-4.5V VDS=-10V Ta=25℃ Pulsed ID DRAIN CURRENT DRAIN CURRENT ID (A) -18 (A) -18 -12 VGS=-2.5V -6 -12 -6 VGS=-2V -0 -0 -2 -4 -6 DRAIN TO SOURCE VOLTAGE -8 VDS -0 -10 -0 -1 (V) -2 -3 GATE TO SOURCE VOLTAGE RDS(ON) —— ID VGS -4 (V) RDS(ON) —— VGS 80 80 Ta=25℃ Pulsed Ta=25℃ Pulsed (mΩ) 60 RDS(ON) 40 ON-RESISTANCE ON-RESISTANCE RDS(ON) (mΩ) 60 VGS=-4.5V 20 40 ID=-9.1A 20 VGS=-10V 0 -0 -2 -4 -6 DRAIN CURRENT ID -8 0 -10 -0 -2 (A) -4 -10 (V) -2 -1 Ta=25℃ Pulsed IS (A) -1.5 SOURCE CURRENT VTH (V) -8 VGS IS —— VSD Threshold Voltage -1.6 THRESHOLD VOLTAGE -6 GATE TO SOURCE VOLTAGE -1.4 ID=-250uA -1.3 -1.2 25 50 75 JUNCTION TEMPERATURE www.cj-elec.com 100 TJ 125 (℃ ) -0.1 -0.01 -1E-3 -0.2 -0.4 -0.6 SOURCE TO DRAIN VOLTAGE 3 -0.8 -1.0 VSD (V) D,Apr,2016 TO-251-3L Package Outline Dimensions Symbol A A1 B b b1 c c1 D D1 E e e1 L www.cj-elec.com Dimensions In Millimeters Min. Max. 2.200 2.400 1.050 1.350 1.350 1.650 0.500 0.700 0.700 0.900 0.430 0.580 0.430 0.580 6.350 6.650 5.200 5.400 5.400 5.700 2.300 TYP. 4.500 4.700 7.500 7.900 4 Dimensions In Inches Min. Max. 0.087 0.094 0.042 0.054 0.053 0.065 0.020 0.028 0.028 0.035 0.017 0.023 0.017 0.023 0.250 0.262 0.205 0.213 0.213 0.224 0.091 TYP. 0.177 0.185 0.295 0.311 D,Apr,2016