SUTEX LP0701N3-GP003 P-channel enhancement-mode lateral mosfet Datasheet

Supertex inc.
LP0701
P-Channel Enhancement-Mode
Lateral MOSFET
Features
General Description
►► Ultra-low threshold
►► High input impedance
►► Low input capacitance
►► Fast switching speeds
►► Low on-resistance
►► Freedom from secondary breakdown
►► Low input and output leakage
These enhancement-mode (normally-off) transistors utilize
a lateral MOS structure and Supertex’s well-proven silicongate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar
transistors and with the high input impedance and negative
temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, these devices are free
from thermal runaway and thermally induced secondary
breakdown. The low threshold voltage and low on-resistance
characteristics are ideally suited for hand held, battery
operated applications.
Applications
►► Logic level interfaces
►► Solid state relays
►► Battery operated systems
►► Photo voltaic drives
►► Analog switches
►► General purpose line drivers
Ordering Information
Product Summary
Part Number
Package Options
Packing
LP0701LG-G
8-Lead SOIC
2500/Reel
LP0701N3-G
TO-92
1000/Bag
LP0701N3-G P002
TO-92
2000/Reel
LP0701N3-G P003
TO-92
2000/Reel
LP0701N3-G P005
TO-92
2000/Reel
LP0701N3-G P013
TO-92
2000/Reel
LP0701N3-G P014
TO-92
RDS(ON)
VGS(TH)
ID(ON)
-16.5V
3.0kΩ
-1.0V (max)
3.0mA (min)
Pin Configuration
D
D
D
D
DRAIN
2000/Reel
NC
-G denotes a lead (Pb)-free / RoHS compliant package
Refer to ‘P0xx’ Tape & Reel Specs for P002, P003, P005, P013, and P014
TO-92 Taping Specifications and Winding Styles
NC
S
SOURCE
G
8-Lead SOIC
TO-92
GATE
Product Marking
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
BVDSS
Drain-to-gate voltage
BVDGS
Gate-to-source voltage
±10V
Operating and storage temperature
BVDSS/BVDGS
YYWW
P0701
LLLL
YY = Year Sealed
WW = Week Sealed
L = Lot Number
= “Green” Packaging
Package may or may not include the following marks: Si or
8-Lead SOIC
-55°C to +150°C
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
Si LP
0 7 0 1
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-92
Doc.# DSFP-LP0701
B071513
Supertex inc.
www.supertex.com
LP0701
Thermal Characteristics
ID
ID
Package
(continuous)†
(mA)
(pulsed)†
(A)
8-Lead SOIC
-700
TO-92
-500
Power Dissipation
( C/W)
IDR
(mA)
IDRM†
1.5‡
101‡
-700
-1.25
1.0
132
-500
-1.25
@TC = 25OC
(W)
-1.25
-1.25
O
θja
(A)
Notes:
† ID (continuous) is limited by max rated Tj.
‡ Mounted on FR4 board, 25mm x 25mm x 1.57mm
Electrical Characteristics (T = 25°C unless otherwise specified)
A
Sym
Parameter
Min
Typ
Max
Units
Drain-to-source breakdown voltage
-16.5
-
-
V
VGS = 0V, ID = -1.0mA
Gate threshold voltage
-0.5
-0.7
-1.0
V
VGS = VDS, ID = -1.0mA
Change in VGS(th) with temperature
-
-
-4.0
mV/ C
VGS = VDS, ID = -1.0mA
IGSS
Gate body leakage
-
-
-100
nA
VGS = ±10V, VDS = 0V
-
-
-100
nA
IDSS
Zero gate voltage drain current
VDS = -15V, VGS = 0V
-
-
-1.0
mA
VDS = 0.8 Max Rating,
VGS = 0V, TA = 125OC
-
-0.4
-
-0.6
-1.0
-
-1.25
-2.30
-
-
2.0
4.0
-
1.7
2.0
-
1.3
1.5
-
-
0.75
%/ C
VGS = -5.0V, ID = -300mA
500
700
-
mmho
VGS = -15V, ID = -1.0A
BVDSS
VGS
ΔVGS(th)
ID(ON)
On-state drain current
Static drain-to-source on-state
resistance
RDS(ON)
ΔRDS(ON)
Change in RDS(ON) with temperature
GFS
Forward transconductance
CISS
Input capacitance
-
120
250
COSS
Common source output capacitance
-
100
125
CRSS
Reverse transfer capacitance
-
40
60
td(ON)
Turn-on delay time
-
-
20
Rise time
-
-
20
Turn-off delay time
-
-
30
Fall time
-
-
30
Diode forward voltage drop
-
-1.2
-1.5
tr
td(OFF)
tf
VSD
O
Conditions
VGS = VDS = -2.0V
A
VGS = VDS = -3.0V
VGS = VDS = -5.0V
VGS = -2.0V, ID = -50mA
Ω
VGS = -3.0V, ID = -150mA
VGS = -5.0V, ID = -300mA
O
pF
VGS = 0V,
VDS = -15V,
f = 1.0MHz
ns
VDD = -15V,
ID = -1.25A,
RGEN = 25Ω
V
VGS = 0V, ISD = -500mA
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
INPUT
-10V
Pulse
Generator
10%
td(ON)
0V
OUTPUT
VDD
Doc.# DSFP-LP0701
B071513
tr
td(OFF)
90%
10%
RGEN
90%
t(OFF)
t(ON)
D.U.T.
tf
INPUT
OUTPUT
RL
90%
10%
VDD
2
Supertex inc.
www.supertex.com
LP0701
Typical Performance Curves
Output Characteristics
-2.5
Saturation Characteristics
-2.5
VGS = -5.0V
VGS = -5.0V
-2.0
-4V
ID (amperes)
ID (amperes)
-2.0
-1.5
-3V
-1.0
-2V
-0.5
-4V
-1.5
-3V
-1.0
-2V
-0.5
-1V
0
-4
-8
-12
VDS (volts)
-16
Transconductance vs. Drain Current
1.0
VDS = -15V
-1V
0
-1
TA = 125OC
0.4
-3
-4
VDS (volts)
-5
SO-8
TA = 25OC
0.6
-2
Power Dissipation vs. Case Temperature
2
TA = -55OC
0.8
GFS (seimens)
0
PD (watts)
0
1
TO-92
0.2
0
-1.0
ID (amperes)
0
-2.0
Maximum Rated Safe Operating Area
-10
1.0
ID (amperes)
TO-92/SO-8 (pulsed)
-1.0
TO-92 (DC)
-0.1
-0.01
-0.1
Doc.# DSFP-LP0701
B071513
SO-8 (DC)
TC = 25OC
-1.0
-10
VDS (volts)
0
25
50
75
100
125
150
TC (OC)
Thermal Resistance (normalized)
0
0.8
0.6
TO-92
TC = 25V
PD = 1.0W
0.4
0.2
0
0.001
-100
Thermal Response Characteristics
0.01
0.1
1.0
10
tp (seconds)
3
Supertex inc.
www.supertex.com
LP0701
Typical Performance Curves (cont.)
BVDSS Variation with Temperature
On-Resistance vs. Drain Current
10
VGS = -2.0V
1.1
RDSS(ON) (ohms)
BVDSS (normalized)
8
1.0
VGS = -3.0V
VGS = -5.0V
6
4
2
0.9
0
50
100
0
150
-1
0
TJ ( C)
O
Transfer Characteristics
-2
V(th) and RDS Variation with Temperature
1.4
VDS = -15V
1.2
TA = -55 C
VGS(th) (normalized)
ID (amperes)
O
TA = 25OC
-1
TA = 125OC
0
-1
-2
-3
-4
1.2
0.8
1.0
RDS(ON) @ -5V, -300mA
0
50
VGS (volts)
VDS = -10V
CISS
100
VGS (volts)
C (picofarads)
-8
COSS
CRSS
0
-5
-10
-20V
-6
238pF
-4
-2
0
-15
VDS (volts)
Doc.# DSFP-LP0701
B071513
0.6
150
100
Gate Drive Dynamic Characteristics
-10
f = 1.0MHz
0
0.8
TJ (OC)
Capacitance vs. Drain-to-Source Voltage
200
1.4
1.0
0.4
-50
-5
1.6
V(th) @ -1.0mA
0.6
0
-3
-2
ID (amperes)
RDS(ON) (normalized)
-50
4
CISS = 115pF
0
1
2
3
QG (nanocoulombs)
4
5
Supertex inc.
www.supertex.com
LP0701
8-Lead SOIC (Narrow Body) Package Outline (LG)
θ1
D
8
Note 1
(Index Area
D/2 x E1/2)
E1
E
L2
L
1
θ
L1
Top View
View B
Note 1
Gauge
Plane
Seating
Plane
View B
h
A
h
A A2
Seating
Plane
A1
e
b
Side View
View A-A
A
Note:
1. This chamfer feature is optional. A Pin 1 identifier must be located in the index area indicated. The Pin 1 identifier can be: a molded mark/identifier;
an embedded metal marker; or a printed indicator.
Symbol
Dimension
(mm)
A
A1
A2
b
MIN
1.35*
0.10
1.25
0.31
NOM
-
-
-
-
MAX
1.75
0.25
1.65*
0.51
D
E
E1
4.80* 5.80* 3.80*
4.90
6.00
3.90
5.00* 6.20* 4.00*
e
1.27
BSC
h
L
0.25
0.40
-
-
0.50
1.27
L1
1.04
REF
L2
0.25
BSC
θ
θ1
0O
5O
-
-
8O
15O
JEDEC Registration MS-012, Variation AA, Issue E, Sept. 2005.
* This dimension is not specified in the JEDEC drawing.
Drawings are not to scale.
Supertex Doc. #: DSPD-8SOLGTG, Version I041309.
Doc.# DSFP-LP0701
B071513
5
Supertex inc.
www.supertex.com
LP0701
3-Lead TO-92 Package Outline (N3)
D
A
Seating
Plane
1
2
3
L
c
b
e1
e
Side View
Front View
E1
E
1
3
2
Bottom View
Symbol
Dimensions
(inches)
A
b
c
D
E
E1
e
e1
L
MIN
.170
.014†
.014†
.175
.125
.080
.095
.045
.500
NOM
-
-
-
-
-
-
-
-
-
MAX
.210
.022†
.022†
.205
.165
.105
.105
.055
.610*
JEDEC Registration TO-92.
* This dimension is not specified in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#: DSPD-3TO92N3, Version E041009.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)
Supertex inc.
©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited.
Doc.# DSFP-LP0701
B071513
6
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
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