CYStech Electronics Corp. Spec. No. : C970J3 Issued Date : 2014.06.14 Revised Date : 2014.06.16 Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET MTB060N15J3 BVDSS ID @VGS=10V RDS(ON)@VGS=10V, ID=4A RDS(ON)@VGS=4.5V, ID=2A 150V 16A 59mΩ(typ) 60mΩ(typ) Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating and halogen-free package Equivalent Circuit Outline MTB060N15J3 TO-252(DPAK) G：Gate D：Drain S：Source G D S Ordering Information Device MTB060N15J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB060N15J3 CYStek Product Specification Spec. No. : C970J3 Issued Date : 2014.06.14 Revised Date : 2014.06.16 Page No. : 2/9 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=100°C, VGS=10V Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=100°C, VGS=10V Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=12mH, ID=9.8A, RG=25Ω Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Total Power Dissipation @TA=25℃ Total Power Dissipation @TA=100℃ Total Power Dissipation @TA=25℃ Total Power Dissipation @TA=100℃ Operating Junction and Storage Temperature Range Symbol Limits VDS VGS 150 ±20 16 11.3 3.8 2.4 3.1 2.0 48 9.8 576 50 25 2.5 1.0 1.7 0.7 -55~+175 ID *2 *2 *3 IDSM *3 IDM IAS EAS PD *2 *2 *3 PDSM *3 Tj, Tstg Unit V A mJ W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max *2 Thermal Resistance, Junction-to-ambient, max *3 Note : *1. Pulse width limited by maximum junction temperature Symbol Rth,j-c Rth,j-a Value 3 50 75 Unit °C/W *2. When the device is mounted on 1 in²FR-4 board with 2 oz. copper. *3. When the device is on the minimum pad size recommended. *4. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. *5. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. Characteristics (Tc=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) GFS *1 IGSS MTB060N15J3 Min. Typ. Max. Unit Test Conditions 150 1.0 - 0.15 1.4 21 - 2.5 ±100 V V/°C V S nA VGS=0V, ID=250μA Reference to 25°C, ID=250μA VDS =VGS, ID=250μA VDS =10V, ID=4A VGS=±20V, VDS=0V CYStek Product Specification CYStech Electronics Corp. IDSS RDS(ON) *1 Dynamic Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Ciss Coss Crss Rg Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr - 59 60 1 25 75 80 - 28 5.1 10.7 12 15 70 100 1957 111 53 1.3 - - 0.75 61 150 16 48 1.2 - μA mΩ Spec. No. : C970J3 Issued Date : 2014.06.14 Revised Date : 2014.06.16 Page No. : 3/9 VDS =150V, VGS =0V VDS =150V, VGS =0, Tj=55°C VGS =10V, ID=4A VGS =4.5V, ID=2A nC ID=16A, VDS=120V, VGS=4.5V ns VDS=75V, ID=16A, VGS=10V, RG=6Ω pF VGS=0V, VDS=30V, f=1MHz Ω VGS=15mV,VDS=0, f=1MHz A V ns nC IS=4A, VGS=0V IF=14A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended soldering footprint MTB060N15J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C970J3 Issued Date : 2014.06.14 Revised Date : 2014.06.16 Page No. : 4/9 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 BVDSS, Normalized Drain-Source Breakdown Voltage 48 ID, Drain Current (A) 40 10V,9V,8V,7V,6V,5V,4V,3 32 24 2.5V 16 8 1.2 1 0.8 0.6 ID=250μA, VGS=0V VGS=2V 0.4 0 0 3 6 9 12 VDS, Drain-Source Voltage(V) -75 -50 -25 15 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1.2 VGS=2V 1000 VSD, Source-Drain Voltage(V) R DS(on), Static Drain-Source On-State Resistance(mΩ) 10000 VGS=2.5V VGS=3V VGS=4.5V VGS=10V 100 VGS=0V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 10 0.01 0.1 1 ID, Drain Current(A) 0 10 2 4 6 8 IDR , Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 3 1000 ID=4A R DS(on), Normalized Static DrainSource On-State Resistance R DS(on), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 800 600 400 200 VGS=10V, ID=4A 2.5 2 1.5 1 0.5 RDS(ON) @Tj=25°C : 59mΩ 0 0 0 MTB060N15J3 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -65 -35 -5 25 55 85 115 Tj, Junction Temperature(°C) 145 175 CYStek Product Specification Spec. No. : C970J3 Issued Date : 2014.06.14 Revised Date : 2014.06.16 Page No. : 5/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 C oss 100 Crss 1.4 1.2 ID=1mA 1 0.8 ID=250μ A 0.6 0.4 10 0.1 1 10 VDS, Drain-Source Voltage(V) -65 100 -35 55 85 115 145 175 Gate Charge Characteristics 100 10 VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 25 Tj, Junction Temperature(°C) Forward Transfer Admittance vs Drain Current 10 1 VDS=10V 0.1 Ta=25°C Pulsed 0.01 0.001 8 6 4 VDS=120V ID=16A 2 0 0.01 0.1 1 ID, Drain Current(A) 10 0 100 10 20 30 40 50 60 Qg, Total Gate Charge(nC) 70 80 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 20 100 18 RDSON Limited 10 ID, Maximum Drain Current(A) 100μs ID, Drain Current(A) -5 1ms 10ms 100ms 1s 1 DC 0.1 TC=25°C, Tj=175°C VGS=10V, θ JC=3°C/W Single Pulse 16 14 12 10 8 6 4 VGS=10V, RθJC=3°C/W 2 0 0.01 0.1 MTB060N15J3 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 TC , Case Temperature(°C) 150 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C970J3 Issued Date : 2014.06.14 Revised Date : 2014.06.16 Page No. : 6/9 Typical Characteristics(Cont.) Single Pulse Power Rating, Junction to Case Typical Transfer Characteristics 3000 48 VDS=10V 2500 32 Power (W) ID, Drain Current(A) 40 24 2000 1500 16 1000 8 500 0 0 1 2 3 4 VGS, Gate-Source Voltage(V) 5 TJ(MAX) =175°C TC=25°C θ JC=3°C/W 0 0.0001 0.001 0.01 0.1 1 Pulse Width(s) 10 100 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.1 0.2 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*Rθ JC(t) 4.RθJC=3°C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 MTB060N15J3 1.E-03 1.E-02 1.E-01 1.E+00 t1, Square Wave Pulse Duration(s) 1.E+01 1.E+02 1.E+03 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C970J3 Issued Date : 2014.06.14 Revised Date : 2014.06.16 Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTB060N15J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C970J3 Issued Date : 2014.06.14 Revised Date : 2014.06.16 Page No. : 8/9 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB060N15J3 CYStek Product Specification Spec. No. : C970J3 Issued Date : 2014.06.14 Revised Date : 2014.06.16 Page No. : 9/9 CYStech Electronics Corp. TO-252 Dimension Marking: 4 Device Name B060 N15 Date Code □□□□ 1 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Inches Min. Max. 0.087 0.094 0.000 0.005 0.039 0.048 0.026 0.034 0.026 0.034 0.018 0.023 0.018 0.023 0.256 0.264 0.201 0.215 0.236 0.244 DIM A A1 B b b1 C C1 D D1 E Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.990 1.210 0.660 0.860 0.660 0.860 0.460 0.580 0.460 0.580 6.500 6.700 5.100 5.460 6.000 6.200 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain DIM e e1 H K L L1 L2 L3 P V Inches Min. Max. 0.086 0.094 0.172 0.188 0.163 REF 0.190 REF 0.386 0.409 0.114 REF 0.055 0.067 0.024 0.039 0.026 REF 0.211 REF Millimeters Min. Max. 2.186 2.386 4.372 4.772 4.140 REF 4.830 REF 9.800 10.400 2.900 REF 1.400 1.700 0.600 1.000 0.650 REF 5.350 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB060N15J3 CYStek Product Specification