DMN53D0LQ N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary RDS(ON) ID TA = +25°C 1.6Ω @ VGS = 10V 500 mA 2.5Ω @ VGS = 4.5V 200 mA V(BR)DSS 50V Features and Benefits Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected to 2KV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.008 grams (Approximate) ideal for high-efficiency power management applications. SOT23 D S G ESD protected Top View Top View Equivalent Circuit Ordering Information (Note 5) Part Number DMN53D0LQ-7 DMN53D0LQ-13 Notes: Case SOT23 SOT23 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 53E = Product Type Marking Code YM = Date Code Marking Y or = Year (ex: B = 2014) M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2014 B Jan 1 2015 C Feb 2 DMN53D0LQ Document number: DS38552 Rev. 1 - 2 2016 D Mar 3 Apr 4 2017 E May 5 2018 F Jun 6 1 of 7 www.diodes.com 2019 G Jul 7 Aug 8 2020 H Sep 9 2021 I Oct O 2022 J Nov N Dec D January 2016 © Diodes Incorporated DMN53D0LQ Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol Value Unit Drain Source Voltage Characteristic VDSS 50 V Gate-Source Voltage VGSS 20 V Drain Current (Note 7) ID 500 mA Symbol Value Unit PD 370 mW RJA 344 C/W PD 540 mW RJA 236 C/W TJ, TSTG -55 to +150 C Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 50 V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS 1.0 µA VDS = 50V, VGS = 0V Gate-Body Leakage IGSS 10 µA VGS = ±20V, VDS = 0V Gate Threshold Voltage VGS(th) 0.8 1.5 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS(ON) 1.6 2.5 4.5 Ω VGS = 10V, ID = 500mA VGS = 4.5V, ID = 200mA VGS = 2.5V, ID = 100mA VSD 1.4 V VGS = 0V, IS = 500mA Input Capacitance Ciss 46 pF Output Capacitance Coss 5.3 pF Reverse Transfer Capacitance Crss 4.0 pF Total Gate Charge Qg 0.6 nC Gate-Source Charge Qgs 0.2 nC Gate-Drain Charge Qgd 0.1 nC Turn-On Delay Time tD(on) 2.7 ns Turn-On Rise Time tr 2.5 ns tD(off) 19 ns tf 11 ns ON CHARACTERISTICS (Note 8) Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Turn-Off Delay Time Turn-Off Fall Time Notes: VDS = 25V, VGS = 0V f = 1.0MHz VGS = 4.5V, VDS = 10V, ID = 250mA VDD = 30V, VGS = 10V, RG = 25Ω, ID = 200mA 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMN53D0LQ Document number: DS38552 Rev. 1 - 2 2 of 7 www.diodes.com January 2016 © Diodes Incorporated DMN53D0LQ 1.5 VDS = 5V 0.8 VGS = 5V 0.9 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1.2 1 VGS = 3V VGS = 10V VGS = 4.5V VGS = 2.5V VGS = 3.5V 0.6 0.3 0.6 TA = 150°C 0.4 TA = 85°C TA = 125°C 0.2 VGS = 2V TA = 25°C VGS = 1.8V TA = -55°C 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 1 0.9 VGS = 5V 0.8 VGS = 10V 0.7 0.6 0.5 0 0.2 0.4 0.6 0.8 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = 10V ID = 500mA 1.6 VGS = 5V ID = 300mA 1.2 0.8 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 5 On-Resistance Variation with Temperature DMN53D0LQ Document number: DS38552 Rev. 1 - 2 3 of 7 www.diodes.com 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 2.5 VGS = 4.5V 2 TA = 150°C TA = 125°C 1.5 T A = 85°C 1 T A = 25°C 0.5 TA = -55°C 0 1 2.4 2.0 0 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) 0.0 0 0.2 0.4 0.6 0.8 ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 1 2 1.8 1.6 1.4 VGS = 5V ID = 300mA 1.2 1 0.8 VGS = 10V ID = 500mA 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature January 2016 © Diodes Incorporated DMN53D0LQ 1.0 1.8 0.8 IS, SOURCE CURRENT (A) V GS(th), GATE THRESHOLD VOLTAGE (V) 2.0 1.6 1.4 ID = 1mA 1.2 ID = 250µA 1.0 TA = 150°C 0.6 TA = 125°C 0.4 TA = 25°C TA = 85°C 0.2 0.8 TA = -55°C 0.6 -50 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 0.3 0.6 0.9 1.2 1.5 V SD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 10 VGS GATE THRESHOLD VOLTAGE (V) 100 CT, JUNCTION CAPACITANCE (pF) 0 Ciss 10 Coss Crss 8 6 VDS = 10V ID = 250mA 4 2 f = 1MHz 1 0 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance 40 0 0.3 0.6 0.9 1.2 1.5 Qg, TOTAL GATE CHARGE (nC) Figure 10 Gate Charge 10 I D, DRAIN CURRENT (A) R DS(on) Limited PW = 100µs 1 DC 0.1 PW = 10s PW = 1s PW = 100ms 0.01 TJ(m ax) = 150°C TA = 25°C 0.001 0.1 PW = 10ms PW = 1ms VGS = 10V Single Pulse DUT on 1 * MRP Board 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11 SOA, Safe Operation Area DMN53D0LQ Document number: DS38552 Rev. 1 - 2 100 4 of 7 www.diodes.com January 2016 © Diodes Incorporated DMN53D0LQ r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA Single Pulse RJA = 339°C/W Duty Cycle, D = t1/ t2 0.001 0.00001 0.0001 0.001 DMN53D0LQ Document number: DS38552 Rev. 1 - 2 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Figure 12 Transient Thermal Resistance 5 of 7 www.diodes.com 10 100 1000 January 2016 © Diodes Incorporated DMN53D0LQ Package Outline Dimensions Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. All 7° H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D F SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0° 8° -All Dimensions in mm G Suggested Pad Layout Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. Y Dimensions C X X1 Y Y1 C Y1 X Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 DMN53D0LQ Document number: DS38552 Rev. 1 - 2 6 of 7 www.diodes.com January 2016 © Diodes Incorporated DMN53D0LQ IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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