Data Sheet HAT2275R Silicon N Channel Power MOSFET Power Switching R07DS1370EJ0401 Rev.4.01 Jan 20, 2017 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 25 m typ. (at VGS = 10 V) Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8<FP-8DAV>) 87 5 6 D D 7 8 D D 65 12 34 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain 4 G 2 G S1 S3 MOS1 MOS2 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. 2. 3. 4. Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 Pch Note4 Tch Tstg Ratings 60 ±20 6.6 52.8 6.6 6.6 3.7 1.5 2.3 150 –55 to +150 Unit V V A A A A mJ W W C C PW 10 s, duty cycle 1% Value at Tch = 25C, Rg 50 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s R07DS1370EJ0401 Rev.4.01 Jan 20, 2017 Page 1 of 4 HAT2275R Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Min 60 — — 1.0 — — 9.5 — — — — — — — — — — Typ — — — — 25 29 16 1210 160 65 10 2.8 3.2 6.8 5.0 42 3.5 Max — ± 0.1 1 2.5 32 43 — — — — — — — — — — — Unit V A A V m m S pF pF pF nc nc nc ns ns ns ns Body–drain diode forward voltage VDF — — 0.81 30 1.06 — V ns Body–drain diode reverse recovery time trr Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 60 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 3.3 A, VGS = 10 V Note5 ID = 3.3 A, VGS = 4.5 V Note5 ID = 3.3 A, VDS = 10 V Note5 VDS = 10 V VGS = 0 f = 1 MHz VDD = 25 V VGS = 4.5 V ID = 6.6 A VGS = 10 V, ID = 3.3 A VDD 30 V RL = 9.1 Rg = 4.7 IF = 6.6 A, VGS = 0 Note5 IF = 6.6 A, VGS = 0 diF/ dt = 100 A/ µs Notes: 5. Pulse test R07DS1370EJ0401 Rev.4.01 Jan 20, 2017 Page 2 of 4 HAT2275R Main Characteristics Dynamic Input Characteristics 3.0 2 2.0 Dr ive 1.0 O pe 1D ra tio riv n eO pe rat 0 50 ion 100 Ambient Temperature R07DS1370EJ0401 Rev.4.01 Jan 20, 2017 150 Ta (°C) 200 20 I D = 6.6 A 80 V DD = 50 V 25 V 10 V 60 16 V GS 12 V DS 40 8 20 V DD = 50 V 25 V 10 V 0 8 16 24 32 Gate Charge Qg (nc) 4 V GS (V) Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s Drain to Source Voltage Channel Dissipation Pch (W) 4.0 VDS (V) 100 Gate to Source Voltage Power vs. Temperature Derating 0 40 Page 3 of 4 HAT2275R Package Dimensions JEITA Package Code RENESAS Code P-SOP8-3.95 × 4.9-1.27 PRSP0008DD-D Package Name FP-8DAV 0.085g F *1 D MASS[Typ.] bp 1 c *2 E Index mark HE 5 8 4 Z *3 NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. Terminal cross section (Ni/Pd/Au plating) bp x M e Reference Symbol L1 Dimension in Millimeters Min Nom Max D 4.90 5.3 E 3.95 A2 A1 0.10 0.14 0.25 0.34 0.40 0.46 0.15 0.20 0.25 1.75 A A bp A1 b1 c L c1 0° y HE Detail F 8° 5.80 e 6.10 6.20 1.27 x 0.25 y 0.1 Z 0.75 L 0.40 L1 0.60 1.27 1.08 Ordering Information Orderable Part Number HAT2275R-EL-E Note: Quantity 2500 pcs Shipping Container Taping For some grades, production may be terminated. Please contact the Renesas sales Office to check the state of production before ordering the product. R07DS1370EJ0401 Rev.4.01 Jan 20, 2017 Page 4 of 4 General Precautions in the Handling of Power MOSFET and IGBT Products The following usage notes are applicable to general purpose Power MOSFET and IGBT products from Renesas. For detailed usage notes on the products covered by this document, refer to the relevant sections of the document as well as any technical updates that have been issued for the products. 1. Derating Continuous heavy condition (e.g. high temperature/voltage/current or high variation of temperature) may affect a reliability even if it are within the absolute maximum ratings. Please consider derating condition for appropriate reliability in reference Renesas Semiconductor Reliability Handbook (Recommendation for Handling and Usage of Semiconductor Devices) and individual reliability data. 2. Quality grade The quality grade of this product is “Standard”. If you plan to use this product to “High quality” application, please inform to Renesas. Fail safe system is necessary to prevent malfunction even if this product is broken. Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. 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