ETC2 MSFC130-16 Thyristor/diode module Datasheet

MSFC130
Thyristor/Diode Modules
800 to 1600V
130Amp
VRRM / VDRM
IFAV / ITAV
Applications
y
y
y
y
Circuit
Power Converters
Lighting Control
DC Motor Control and Drives
Heat and temperature control
Features
y
y
y
y
y
y
International standard package
High Surge Capability
Glass passivated chip
Simple Mounting
Heat transfer through aluminum oxide
DBCceramic isolated metal baseplate
UL E243882 approved
Module Type
TYPE
VRRM/VDRM
VRSM
MSFC130-08
MSFC130-12
MSFC130-16
800V
1200V
1600V
900V
1300V
1700V
◆Diode
Maximum Ratings
Symbol
Item
Conditions
ID
Output Current(D.C.)
Tc=85℃
IFSM
Surge forward current
t=10mS Tvj =45℃
i2t
Visol
Tvj
Tstg
Mt
Ms
Weight
A
A
A2s
3000
V
-40 to +125
℃
To terminals(M6)
-40 to +125
3±15%
℃
Nm
To heatsink(M6)
5±15%
Nm
165
g
a.c.50HZ;r.m.s.;1min
Module(Approximately)
Thermal Characteristics
Symbol
Item
Thermal
Impedance,
max.
Rth(j-c)
Rth(c-s)
130
4700
Operating Junction Temperature
Storage Temperature
Mounting Torque
Units
110000
Circuit Fusing Consideration
Isolation Breakdown Voltage(R.M.S)
Values
Thermal Impedance, max.
Values
Units
Junction to Case
Conditions
0.09
℃/W
Case to Heatsink
0.05
℃/W
Electrical Characteristics
Symbol
Item
VFM
Forward Voltage Drop, max.
IRRM
Repetitive Peak Reverse Current,
max.
Document Number: MSFC130
Dec.20, 2010
Conditions
T=25℃ IF =500A
Tvj =25℃ VRD=VRRM
Tvj =125℃ VRD=VRRM
Values
Min.
Typ.
≤0.5
≤9
Max.
1.80
Units
V
mA
mA
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1
MSFC130
◆Thyristor
Maximum Ratings
Symbol
Values
Units
ITAV
Average On-State Current
Sine 180o;Tc=85℃
130
A
ITSM
Surge On-State Current
TVJ =45℃ t=10ms, sine
TVJ =125℃ t=10ms, sine
4700
4000
A
Circuit Fusing Consideration
TVJ =45℃ t=10ms, sine
TVJ =125℃ t=10ms, sine
110000
80000
A2s
i2t
Item
Visol
Tvj
Isolation Breakdown Voltage(R.M.S)
Operating Junction Temperature
Tstg
Storage Temperature
Mt
Mounting Torque
Ms
Conditions
a.c.50HZ;r.m.s.;1min
3000
-40 to +130
-40 to +125
V
℃
To terminals(M6)
3±15%
℃
Nm
To heatsink(M6)
5±15%
Nm
di/dt
Critical Rate of Rise of On-State
Current
TVJ= TVJM , 2/3VDRM ,IG =500mA
Tr<0.5us,tp>6us
200
A/us
dv/dt
Critical Rate of Rise of Off-State
Voltage, min.
TJ=TVJM ,2/3VDRM linear voltage rise
1000
V/us
a
Maximum allowable acceleration
50
m/s2
Values
Units
Junction to Case
0.18
℃/W
Case to Heatsink
0.10
℃/W
Thermal Characteristics
Symbol
Item
Thermal Impedance, max.
Rth(j-c)
Rth(c-s)
Thermal Impedance, max.
Conditions
Electrical Characteristics
Symbol
Item
VTM
Peak On-State Voltage, max.
Repetitive Peak Reverse Current,
max. / Repetitive Peak Off-State
Current, max.
Conditions
Values
Min. Typ. Max.
Units
T=25℃ IT =500A
1.8
V
TVJ=TVJM ,VR=VRRM ,VD=
VDRM
40
mA
On state threshold voltage
For power-loss
calculations only
(TVJ =125℃)
1
V
Value of on-state
slope resistance. max
TVJ =TVJM
1.6
mΩ
VGT
Gate Trigger Voltage, max.
TVJ =25℃ , VD =6V
3
V
IGT
Gate Trigger Current, max.
TVJ =25℃ , VD =6V
150
mA
VGD
Non-triggering gate voltage, max.
TVJ=125℃,VD =2/3VDRM
0.25
V
IGD
IRRM/IDRM
VTO
rT
Non-triggering gate current, max.
TVJ =125℃, VD =2/3VDRM
10
mA
IL
Latching current, max.
TVJ =25℃ , RG = 33 Ω
300
1000
mA
IH
Holding current, max.
TVJ =25℃ , VD =6V
150
400
mA
tgd
Gate controlled delay time
TVJ=25℃,
IG=1A, diG/dt=1A/us
tq
Circuit commutated turn-off time
TVJ =TVJM
Document Number: MSFC130
Dec.20, 2010
1
us
100
us
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MSFC130
Performance Curves
250
250
sin.180
W
rec.120
200
A
DC
DC
200
rec.60
150
150
rec.30
sin.180
rec.120
100
100
rec.60
50
50
PTAV
ITAVM
0
0 ITAV
50
100
150
A 200
rec.30
0
0 Tc
Fig1. Power dissipation
100
6000
Zth(j-S)
℃/ W
Zth(j-C)
0.15
0.001 t 0.01
0.1
1
10
S 100
50HZ
A
3000
0
10
Fig3. Transient thermal impedance
100
ms 1000
Fig4. Max Non-Repetitive Forward Surge
Current
600
A
℃ 130
Fig2.Forward Current Derating Curve
0.30
0
50
Typ.
400
max.
200
25℃
- - -125℃
IT
0
0 VTM
0.5
1.0
1.5
V
2.0
Fig5. Forward Characteristics
Document Number: MSFC130
Dec.20, 2010
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3
MSFC130
100
1/2·MSFC130
V
20V;20Ω
10
VGT
∧
1
Tvj
PG(tp)
-40℃
25℃
125℃
VGD125℃
VG
IGT
IGD125℃
0.1
0.001 IG
0.01
0.1
1
10
A 100
Fig6. Gate trigger Characteristics
Package Outline Information
CASE: F2
×
Dimensions in mm
Document Number: MSFC130
Dec.20, 2010
www.smsemi.com
4
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