CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged PN: CGHV961 00F2 Package Type : 440210 package for optimal electrical and thermal performance. Typical Performance Over 8.4-9.6 GHz (TC = 25˚C) Parameter 8.4 GHz 8.8 GHz 9.0 GHz 9.2 GHz 9.4 GHz 9.6 GHz Units Linear Gain 12.7 12.4 12.7 13.1 13.1 12.4 dB Output Power 151 147 150 152 140 131 W Power Gain 10.8 10.6 10.7 10.7 10.5 10.2 dB 44 42 44 43 45 45 % Power Added Efficiency Note: Measured in CGHV96100F2-AMP (838179) under 100 µS pulse width, 10% duty, Pin 41.0 dBm (12.6 W) 15 Rev 2.0 – May 20 Features Applications • 8.4 - 9.6 GHz Operation • Marine Radar • 145 W POUT typical • Weather Monitoring • 10 dB Power Gain • Air Traffic Control • 45 % Typical PAE • Maritime Vessel Traffic Control • 50 Ohm Internally Matched • Port Security • <0.3 dB Power Droop Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Drain-source Voltage VDSS 100 Volts 25˚C Gate-source Voltage VGS -10, +2 Volts 25˚C Power Dissipation PDISS 115.2 / 222.0 Watts (CW / Pulse) Storage Temperature TSTG -65, +150 ˚C TJ 225 ˚C Operating Junction Temperature Conditions Maximum Drain Current IDMAX 12 Amps Maximum Forward Gate Current IGMAX 28.8 mA Soldering Temperature2 TS 245 ˚C Screw Torque τ 40 in-oz Thermal Resistance, Junction to Case RθJC 0.73 ˚C/W Pulse Width = 100 µs, Duty Cycle = 10%, 85˚C, PDISS = 173 W Thermal Resistance, Junction to Case RθJC 1.07 ˚C/W CW, 85˚C, PDISS = 115.2 W TC -40, +150 ˚C 1 Case Operating Temperature3 25˚C Note: 1 Current limit for long term reliable operation. 2 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library 3 See also, the Power Dissipation De-rating Curve on Page 9. Electrical Characteristics (Frequency = 9.6 GHz unless otherwise stated; TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(TH) -3.8 -3.0 -2.3 V VDS = 10 V, ID = 28.8 mA Gate Quiscent Voltage VGS(Q) – -2.7 – V VDS = 40 V, ID = 1000 mA Saturated Drain Current2 IDS 21.0 26.0 – A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBD 100 – – V VGS = -8 V, ID = 28.8 mA Small Signal Gain S21 10.5 12.4 – dB VDD = 40 V, IDQ = 1000 mA, PIN = -20 dBm Input Return Loss 1 S11 – –5.2 -2.8 dB Input Return Loss 2 S11 – – -3.3 dB Output Return Loss S22 – –12.3 -6.0 dB VDD = 40 V, IDQ = 1000 mA, PIN = -20 dBm Power Output3,4 POUT 100 131.0 – W VDD = 40 V, IDQ = 1000 mA, PIN = 41 dBm Power Added Efficiency3,4 PAE 30 45 – % VDD = 40 V, IDQ = 1000 mA, PIN = 41 dBm PG – 10.2 – dB VDD = 40 V, IDQ = 1000 mA, PIN = 41 dBm VSWR – – 5:1 Y No damage at all phase angles, VDD = 40 V, IDQ = 1000 mA, DC Characteristics1 RF Characteristics3 Power Gain3,4 Output Mismatch Stress VDD = 40 V, IDQ = 1000 mA, PIN = -20 dBm, 8.4 - 9.4 GHz VDD = 40 V, IDQ = 1000 mA, PIN = -20 dBm, 9.4 - 9.6 GHz Notes: 1 Measured on-wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in CGHV96100F2-AMP (838179) under 100 µS pulse width, 10% duty 4 Fixture loss de-embedded using the following offsets: Frequency = 9.6 GHz. Input = 0.5 dB and Output = 0.5 dB. Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 2 CGHV96100F2 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV96100F2 Typical Performance Figure 1. - Small Signal Gain and Return Loss vs Frequency Typical small signal gain and retrurn loss vs. frequncy of CGHV96100F2 measured in CGHV96100F2-AMP of CGHV96100F2 Measured in a CGHV96100F2 TB VDS =Vds 40 =40 V, IDQ 1000mA V, =Idq =1000 mA 20 Gain (dB), Return Losses (dB) 15 10 5 0 -5 -10 S11 -15 S21 S22 -20 -25 7 7.5 8 8.5 9 9.5 10 10.5 11 Frequency (GHz) Figure 2. - Power Gain vs. Frequency and Input Power PG=vs. Freq. & Pin 100 µsec, Duty Cycle = 10% VDD = 40 V, Pulse Width Pulse 100 us / 10 % duty 15 14 13 Power Gain (dB) 12 11 10 9 8 Pin 39 Pin 40 7 Pin 41 Pin 42 6 Psat 5 7.6 7.8 8.0 8.2 8.4 8.6 8.8 9.0 Frequency (GHz) 9.2 9.4 9.6 Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 3 CGHV96100F2 Rev 2.0 9.8 10.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV96100F2 Typical Performance Figure 3. - Output Power vs. Input Power Pin Duty Cycle = 10% VDD = 40 V, Pulse Width =Pout 100vs. µsec, Pulsed 100 us / 10 % Duty 54 52 Output Power (dBm) 50 48 46 44 42 40 38 9.0 GHz 36 9.2 GHz 9.4 GHz 34 9.6 GHz 32 30 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 Input Power (dBm) Figure 4. - Power Gain vs. Frequency and Input Power PG vs. Pin VDD = 40 V, Pulse Pulsed Width 100 = 100 Duty Cycle = 10% us / µsec, 10 % Duty 15 14 13 Power Gain (dB) 12 11 10 9 8 9.0 GHz 7 9.2 GHz 6 9.6 GHz 9.4 GHz 5 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 Input Power (dBm) Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 4 CGHV96100F2 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV96100F2 Typical Performance Figure 5. - Power Added Efficiency vs. Input Power PAE vs. Pin 100 us /µsec, 10 % Duty VDD = 40 V, Pulse Pulsed Width = 100 Duty Cycle = 10% 60 55 Power Added Efficiency (%) 50 45 40 35 30 25 20 9.0 GHz 9.2 GHz 15 9.4 GHz 9.6 GHz 10 5 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 Input Power (dBm) Figure 6. - Output Power vs. Time Power vs. Time VDD = 40 V, PIN =Output 41 dBm, Duty Cycle = 10% Pin 41 dBm 52.00 51.90 51.80 Power (dBm) 51.70 51.60 51.50 10us 50uS 51.40 100uS 300uS 51.30 51.20 51.10 51.00 0 50 100 150 200 250 300 350 400 450 Pulse Length (µS) Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 5 CGHV96100F2 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV96100F2 Typical Performance Figure 7. - Output Power vs. Input Power & Frequency VDD = 40 V, Pulse Width = 100 µsec, Duty Cycle = 10% Pout vs. Freq. & Pin Pulse 100 us / 10 % duty 53.00 52.50 Output Power (dBm) 52.00 51.50 51.00 50.50 Pin 39 50.00 Pin 40 Pin 41 49.50 Pin 42 Psat 49.00 7.6 7.8 8.0 8.2 8.4 8.6 8.8 9.0 9.2 9.4 9.6 9.8 10.0 Frequency (GHz) Figure 8. - Power Added Efficiency vs. Input Power & Frequency VDD = 40 V, Pulse Width = 100 µsec, Duty Cycle = 10% PAE vs. Freq. & Pin Pulse 100 us / 10 % duty 60 55 Power Added Efficiency (%) 50 45 40 35 30 Pin 39 25 Pin 40 Pin 41 20 Pin 42 Psat 15 10 7.6 7.8 8.0 8.2 8.4 8.6 8.8 9.0 9.2 9.4 9.6 9.8 10.0 Frequency (GHz) Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 6 CGHV96100F2 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV96100F2-AMP Demonstration Amplifier Circuit Bill of Materials Designator R1 C1, C11 Description Qty RES, 47 OHM +/-1%, 1/16 W, 0603, SMD 1 CAP, 1.6pF, +/- 0.1 pF, 200V, 0402, ATC 600L 2 C2, C12 CAP, 1.0pF, +/- 0.1 pF, 200V, 0402 ATC 600L 2 C3, C13 CAP, 10 pF +/-5%, 0603, ATC 2 C4, C14 CAP, 470 pF +/-5%, 100 V, 0603 2 C5, C15 CAP, 33,000 pF, 0805, 100 V, X7R 2 C6 CAP, 10 uF, 16 V, TANTALUM 1 C18 CAP, 470 uF +/-20%, ELECTROLYTIC 1 CONNECTOR, SMA, PANEL MOUNT JACK, FLANGE, 4-HOLE, BLUNT POST, 20MIL 2 J3 CONNECTOR, HEADER, RT>PLZ .1CEN LK 9POS 1 J4 CONNECTOR, SMB, STRAIGHT JACK 1 - PCB, TEST FIXTURE, TACONICS RF35P, 20 MIL THK, 440210 PKG 1 - 2-56 SOC HD SCREW 1/4 SS 4 - #2 SPLIT LOCKWASHER SS 4 CGHV96100F2 1 J1,J2 Q1 CGHV96100F2-AMP Demonstration Amplifier Circuit Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 7 CGHV96100F2 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV96100F2-AMP Demonstration Amplifier Circuit Schematic CGHV96100F2-AMP Demonstration Amplifier Circuit Outline Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 8 CGHV96100F2 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV96100F2 Power Dissipation De-rating Curve Power dissipation derating curve vs. Max Tcase CW & Pulse (100 uS/ 10% duty) 260 240 220 Power Dissipation (W) 200 180 Pulse 100uS / 10% CW 160 140 Note 1 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 200 225 250 Maximum Case Temperature (C) Note 1 : Shaded area exceeds Maximum Case Operating Temperature (See Page 2) CGHV96100F2 Transient Curve CGHV96100F 6 W/mm 1.2 1.1 ThetaJC ((⁰C/W) 1 0.9 0.8 0.7 10% Duty Cycle 0.6 0.5 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 Time (sec) Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 9 CGHV96100F2 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGHV96100F2 (Package Type — 440210) Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 10 CGHV96100F2 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Part Number System CGHV96100F2 Package, Power Test Power Output (W) Upper Frequency (GHz) Cree GaN HEMT High Voltage Parameter Upper Frequency 1 Power Output Package Value Units 9.6 GHz 100 W Flange - Table 1. Note1: Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz Table 2. Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 11 CGHV96100F2 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGHV96100F2 GaN HEMT Each CGHV96100F2-TB GaN HEMT Each CGHV96100F2-AMP Test board without GaN HEMT Each CGHV96100F2-JMT Delivered in a JEDEC Matrix tray TBD parts / tray Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 12 CGHV96100F2 Rev 2.0 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications, and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. CREE and the CREE logo are registered trademarks of Cree, Inc. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/rf Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 13 CGHV96100F2 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf