PHILIPS NX7002BKMB 60 v, n-channel trench mosfet Datasheet

SO
T8
83
B
NX7002BKMB
60 V, N-channel Trench MOSFET
3 December 2014
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
•
•
•
•
Logic-level compatible
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2kV HBM
3. Applications
•
•
•
•
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
60
V
VGS
gate-source voltage
-20
-
20
V
ID
drain current
-
-
350
mA
-
2.2
2.8
Ω
VGS = 10 V; Tamb = 25 °C
[1]
Static characteristics
RDSon
drain-source on-state
resistance
[1]
VGS = 10 V; ID = 200 mA; Tj = 25 °C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
2
drain 1 cm .
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NX7002BKMB
NXP Semiconductors
60 V, N-channel Trench MOSFET
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
G
Simplified outline
gate
2
S
source
3
D
drain
Graphic symbol
D
1
3
2
Transparent
top view
G
DFN1006B-3 (SOT883B)
S
017aaa255
6. Ordering information
Table 3.
Ordering information
Type number
NX7002BKMB
Package
Name
Description
Version
DFN1006B-3
DFN1006B-3: leadless ultra small plastic package; 3 solder
lands; body 1.0 x 0.6 x 0.37 mm
SOT883B
7. Marking
Table 4.
Marking codes
Type number
Marking code
NX7002BKMB
0101 0111
PIN 1 INDICATION
READING DIRECTION
READING EXAMPLE:
0111
1011
MARKING CODE
(EXAMPLE)
READING DIRECTION
006aac673
Fig. 1.
DFN1006B-3 (SOT883B) binary marking code description
NX7002BKMB
Product data sheet
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60 V, N-channel Trench MOSFET
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
60
V
VGS
gate-source voltage
-20
20
V
ID
drain current
VGS = 10 V; Tamb = 25 °C
[1]
-
350
mA
VGS = 10 V; Tamb = 100 °C
[1]
-
200
mA
-
0.9
A
[2]
-
350
mW
[1]
-
680
mW
-
3100
mW
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tsp = 25 °C
Tj
junction temperature
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
-
200
mA
Source-drain diode
IS
source current
Tamb = 25 °C
[1]
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
[2]
drain 1 cm .
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
017aaa123
120
Pder
(%)
Ider
(%)
80
80
40
40
0
- 75
Fig. 2.
017aaa124
120
- 25
25
75
125
Tj (°C)
Normalized total power dissipation as a
function of junction temperature
NX7002BKMB
Product data sheet
0
- 75
175
Fig. 3.
- 25
75
125
Tj (°C)
175
Normalized continuous drain current as a
function of junction temperature
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60 V, N-channel Trench MOSFET
aaa-015212
1
(1)
Limit RDSon = VDS/ID
ID
(A)
10-1
(2)
(3)
(4)
(5)
10-2
(6)
10-3
10-1
1
10
102
VDS (V)
IDM = single pulse
(1) tp = 10 µs
(2) tp = 1 ms
(3) DC; Tsp = 25 °C
(4) tp = 10 ms
(5) tp = 100 ms
2
(6) DC; Tamb = 25 °C; drain mounting pad 1 cm
Fig. 4.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
[1]
[2]
NX7002BKMB
Product data sheet
Min
Typ
Max
Unit
[1]
-
314
360
K/W
[2]
-
159
180
K/W
-
35
40
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .
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60 V, N-channel Trench MOSFET
aaa-015213
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.50
102
0.33
0.25
0.20
0.10
0.05
0.01
0
0.02
10
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-015215
103
Zth(j-a)
(K/W)
duty cycle = 1
102 0.50
0.25
0.75
0.33
0.20
0.10
0.05
0.02
0.01
0
10
10-3
10-2
10-1
FR4 PCB, mounting pad for drain 1 cm
Fig. 6.
1
10
102
tp (s)
103
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NX7002BKMB
Product data sheet
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60 V, N-channel Trench MOSFET
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
60
-
-
V
VGSth
gate-source threshold
voltage
ID = 250 µA; VDS = VGS; Tj = 25 °C
1.1
1.6
2.1
V
IDSS
drain leakage current
VDS = 60 V; VGS = 0 V; Tj = 25 °C
-
-
1
µA
IGSS
gate leakage current
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
-
10
µA
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
-
-10
µA
VGS = 10 V; VDS = 0 V; Tj = 25 °C
-
-
1
µA
VGS = -10 V; VDS = 0 V; Tj = 25 °C
-
-
-1
µA
VGS = 5 V; VDS = 0 V; Tj = 25 °C
-
-
0.3
µA
VGS = -5 V; VDS = 0 V; Tj = 25 °C
-
-
-0.3
µA
VGS = 10 V; ID = 200 mA; Tj = 25 °C
-
2.2
2.8
Ω
VGS = 10 V; ID = 100 mA; Tj = 150 °C
-
4.5
5.7
Ω
VGS = 5 V; ID = 200 mA; Tj = 25 °C
-
2.5
3.2
Ω
RDSon
drain-source on-state
resistance
gfs
forward
transconductance
VDS = 10 V; ID = 200 mA; Tj = 25 °C
-
600
-
mS
RG
internal gate
resistance (AC)
f = 2.5 MHz
-
2.5
-
Ω
Dynamic characteristics
QG(tot)
total gate charge
VDS = 30 V; ID = 200 mA; VGS = 10 V;
-
1
-
nC
QGS
gate-source charge
Tj = 25 °C
-
0.12
-
nC
QGD
gate-drain charge
-
0.18
-
nC
Ciss
input capacitance
VDS = 10 V; f = 1 MHz; VGS = 0 V;
-
23.6
-
pF
Coss
output capacitance
Tj = 25 °C
-
4.6
-
pF
Crss
reverse transfer
capacitance
-
3
-
pF
td(on)
turn-on delay time
VDS = 50 V; ID = 200 mA; VGS = 10 V;
-
4.7
-
ns
tr
rise time
RG(ext) = 6 Ω; Tj = 25 °C
-
4.3
-
ns
td(off)
turn-off delay time
-
6.9
-
ns
tf
fall time
-
2.9
-
ns
-
0.87
1.2
V
Source-drain diode
VSD
source-drain voltage
NX7002BKMB
Product data sheet
IS = 200 mA; VGS = 0 V; Tj = 25 °C
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60 V, N-channel Trench MOSFET
aaa-014131
1
ID
(A)
4.5 V
0.8
aaa-014132
10-3
VGS = 10 V
ID
(A)
3.5 V
10-4
0.6
(1)
3.0 V
0.4
Fig. 7.
(3)
10-5
0.2
0
(2)
2.5 V
0
1
2
3
4
VDS (V)
10-6
5
0
1
2
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
Output characteristics: drain current as a
function of drain-source voltage; typical values
(1) minimum values
(2) typical values
(3) maximum values
Fig. 8.
aaa-014133
8
2.5 V
RDSon
(Ω)
3.0 V
aaa-014134
RDSon
(Ω)
4.0 V
6
3
Sub-threshold drain current as a function of
gate-source voltage
8
3.5 V
VGS (V)
6
4.5 V
(1)
4
4
(2)
VGS = 10 V
2
0
Fig. 9.
0
0.2
0.4
0.6
ID (A)
2
0
0.8
0
2
Tj = 25 °C
ID = 0.2 A
Drain-source on-state resistance as a function
of drain current; typical values
(1) Tj = 150 °C
4
6
8
10
VGS (V)
(2) Tj = 25 °C
Fig. 10. Drain-source on-state resistance as a function
of gate-source voltage; typical values
NX7002BKMB
Product data sheet
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60 V, N-channel Trench MOSFET
aaa-014135
0.6
aaa-014136
2.5
a
ID
(A)
2.0
0.4
1.5
(2)
1.0
0.2
0.5
(1)
0
0
1
2
3
4
VGS (V)
0
-60
5
VDS > ID × RDSon
0
60
120
Tj (°C)
180
Fig. 12. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
(1) Tj = 25 °C
(2) Tj = 150 °C
Fig. 11. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
aaa-014137
2.5
VGS(th)
(V)
C
(pF)
(1)
2.0
(1)
10
(2)
.1.5
aaa-014138
102
(2)
(3)
1.0
(3)
1
0.5
0
-60
0
60
120
Tj (°C)
10-1
10-1
180
1
ID = 0.25 mA; VDS = VGS
f = 1 MHz; VGS = 0 V
(1) maximum values
(2) typical values
(3) minimum values
(1) Ciss
Product data sheet
VDS (V)
102
(2) Coss
(3) Crss
Fig. 13. Gate-source threshold voltage as a function of
junction temperature
NX7002BKMB
10
Fig. 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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60 V, N-channel Trench MOSFET
aaa-014139
10
VDS
VGS
(V)
ID
8
VGS(pl)
6
VGS(th)
VGS
4
QGS1
QGS2
QGS
2
QGD
QG(tot)
003aaa508
0
0
0.2
0.4
0.6
Fig. 16. MOSFET transistor: Gate charge waveform
definitions
0.8
1.0
QG (nC)
ID = 0.2 A; VDS = 30 V; Tamb = 25 °C
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
aaa-014140
0.20
IS
(A)
0.15
(1)
0.10
0.05
(2)
0
0
0.4
0.8
VSD (V)
1.2
VGS = 0 V
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig. 17. Source current as a function of source-drain voltage; typical values
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11. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig. 18. Duty cycle definition
NX7002BKMB
Product data sheet
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60 V, N-channel Trench MOSFET
12. Package outline
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm
L (2x)
SOT883B
L1
2
b (2x)
3
e
b1
1
e1
A1
A
E
D
0
0.5
Dimensions
Unit
mm
1 mm
scale
A(1)
A1
b
b1
D
E
e
e1
L
L1
max 0.40 0.04 0.20 0.55 0.65 1.05
0.30 0.30
nom 0.37
0.15 0.50 0.60 1.00 0.35 0.65 0.25 0.25
min 0.34
0.12 0.47 0.55 0.95
0.22 0.22
Note
1. Including plating thickness
Outline
version
sot883b_po
References
IEC
JEDEC
JEITA
European
projection
Issue date
11-11-02
12-01-03
SOT883B
Fig. 19. Package outline DFN1006B-3 (SOT883B)
NX7002BKMB
Product data sheet
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13. Soldering
Footprint information for reflow soldering
SOT883B
1.3
0.7
R0.05 (8x)
0.9
0.6
0.7
0.25
(2x)
0.3
(2x)
0.3
0.4
(2x)
0.4
solder land
solder land plus solder paste
solder paste deposit
solder resist
occupied area
Dimensions in mm
sot883b_fr
Fig. 20. Reflow soldering footprint for DFN1006B-3 (SOT883B)
NX7002BKMB
Product data sheet
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14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
NX7002BKMB v.2
20141203
Product data sheet
-
NX7002BKMB v.1
Modification:
•
NX7002BKMB v.1
20141001
Product data sheet
-
-
NX7002BKMB
Product data sheet
Figure 3 updated
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60 V, N-channel Trench MOSFET
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or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
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the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
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(b) whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,
MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
NX7002BKMB
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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NXP Semiconductors
60 V, N-channel Trench MOSFET
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................3
9
Thermal characteristics .........................................4
10
Characteristics ....................................................... 6
11
Test information ................................................... 10
12
Package outline ................................................... 11
13
Soldering .............................................................. 12
14
Revision history ................................................... 13
15
15.1
15.2
15.3
15.4
Legal information .................................................14
Data sheet status ............................................... 14
Definitions ...........................................................14
Disclaimers .........................................................14
Trademarks ........................................................ 15
© NXP Semiconductors N.V. 2014. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 3 December 2014
NX7002BKMB
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved
16 / 16
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