DSS4160FDB 60V DUAL NPN LOW VCE(sat) TRANSISTOR Features Mechanical Data BVCEO > 60V IC = 1A high Continuous Collector Current RCE(sat) = 180mΩ for a Low Equivalent On-Resistance Case: U-DFN2020-6 Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Rating 94V-0 Low Saturation Voltage VCE(sat) < 220mV @ 1A Moisture Sensitivity: Level 1 per J-STD-020 PD up to 2.47W for power demanding applications RθJA efficient, 40% lower than SOT26 Terminals: Finish NiPdAu, Solderable per MIL-STD-202, Method 208 e4 Low profile 0.6mm high package for thin applications Weight: 0.0065 grams (Approximate) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Application Load Switches Power Management Charging Circuits Power Switches (e.g. Motors, Fans) U-DFN2020-6 6 5 4 C1 B2 E2 6 C2 C1 1 1 Bottom View 2 3 E1 B1 C2 Top View Pin-Out Device Symbol Ordering Information (Note 4) Notes: Product Marking Reel size (inches) Tape width (mm) Quantity per reel DSS4160FDB-7 2B 7 8 3,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 2B YWX DSS4160FDB Datasheet Number: DS37801 Rev.1 - 2 2B = Product type Marking Code Y = Year: 0~9 W = Week: A~Z : 1~26 week; a~z; 27~52 week; z represents 52 and 53 week X = A~Z: Internal code 1 of 7 www.diodes.com December 2015 © Diodes Incorporated DSS4160FDB Absolute Maximum Ratings – Q1 & Q2 (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Collector Current Base Current Peak Base Current Symbol VCBO VCEO VEBO IC ICM IB IBM Value 60 60 7 1 1.5 300 1 Unit V V V A A mA A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and Storage Temperature Range Symbol (Notes 5 & 7) (Notes 5 & 8) (Notes 6 & 7) (Notes 6 & 8) (Notes 5 & 7) (Notes 5 & 8) (Notes 6 & 7) (Notes 6 & 8) (Note 9) PD RJA RJL TJ, TSTG Value 405 510 1650 2470 308 245 76 51 18 -55 to +150 Unit mW °C/W °C/W °C ESD Ratings (Note 10) Characteristic Electrostatic Discharge – Human Body Model Electrostatic Discharge – Machine Model Notes: Symbol ESD HBM ESD MM Value 4,000 400 Unit V V JEDEC Class 3A C 5. For a device mounted with the exposed collector pads on minimum recommended pad layout that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 6. Same as note (5), except the device is mounted with the collector pad on 28mm x 28mm (8cm2) 2oz copper. 7. For a dual device with one active die. 8. For dual device with 2 active die running at equal power. 9. Thermal resistance from junction to solder-point (on the exposed collector pads). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A115. DSS4160FDB Datasheet Number: DS37801 Rev.1 - 2 2 of 7 www.diodes.com December 2015 © Diodes Incorporated DSS4160FDB Thermal Characteristics and Derating Information 2.5 1 See note 5 & 7 Max Power Dissipation (W) IC Collector Current (A) VCE(sat) Limited DC 100m 1s 100ms 10ms 10m 1ms 1m Single Pulse T amb=25°C 100µs 100m 1 10 VCE Collector-Emitter Voltage (V) Note 6 & 8 2.0 Note 6 & 7 1.5 Note 5 & 7 1.0 Note 5 & 8 0.5 0.0 0 20 Maximum Power (W) Thermal Resistance (°C/W) Single Pulse D=0.05 D=0.1 1 10 100 Single Pulse T amb=25°C See note 5 & 7 10 1 0.1 100µ 1k 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation 100 70 Maximum Power (W) 80 Thermal Resistance (°C/W) 100 120 140 160 100 Transient Thermal Impedance T amb=25°C 60 See note 6 & 7 D=0.5 40 30 80 Derating Curve Pulse Width (s) 50 60 Temperature (°C) Safe Operating Area 330 300 T amb=25°C 270 See note 5 & 7 240 210 180 D=0.5 150 120 90 D=0.2 60 30 0 100µ 1m 10m 100m 40 D=0.2 Single Pulse 20 D=0.05 10 D=0.1 0 100µ 1m 10m 100m 1 10 100 1k Single Pulse T amb=25°C See note 6 & 7 10 1 100µ Datasheet Number: DS37801 Rev.1 - 2 10m 100m 1 10 100 1k Pulse Power Dissipation Transient Thermal Impedance DSS4160FDB 1m Pulse Width (s) Pulse Width (s) 3 of 7 www.diodes.com December 2015 © Diodes Incorporated DSS4160FDB Electrical Characteristics – Q1 & Q2 (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 11) Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Symbol BVCBO BVCEO BVEBO ICBO Emitter-Base Cutoff Current IEBO DC Current Gain (Note 11) hFE Min 60 60 7 290 150 70 Typ 430 220 110 90 170 185 180 Max 100 50 100 120 220 240 240 1 1.1 1.1 0.9 Unit V V V nA µA nA Collector-Emitter Saturation Voltage (Note 11) VCE(sat) Equivalent On-Resistance (Note 11) RCE(sat) Base-Emitter Saturation Voltage (Note 11) VBE(sat) Base-Emitter Turn-on Voltage (Note 11) VBE(on) fT 90 175 MHz Cob (c) ton td tr toff ts tf 4 105 15 90 540 410 130 6 pF ns ns ns ns ns ns Transition Frequency Output (Collector) Capacitance Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time Note: mV mΩ V V Test Conditions IC = 100µA IC = 10mA IE = 100µA VCB = 48V, IE = 0 VCB = 48V, IE = 0, TA = +150°C VEB = 5.6V, IC = 0 VCE = 2V, IC = 100mA VCE = 2V, IC = 500mA VCE = 2V, IC = 1A IC = 500mA, IB = 50mA IC = 1A, IB = 100mA IC = 1A, IB = 50mA IC = 500mA, IB = 50mA IC = 0.5A, IB = 50mA IC = 1A, IB = 50mA IC = 1A, IB = 100mA VCE = 2V, IC = 0.5A VCE = 10V, IC = 50mA, f = 100MHz VCB = -10V, f = 1MHz VCC = -10V, IC = -0.5A, IB1 = -IB2 = 25mA 11. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%. DSS4160FDB Datasheet Number: DS37801 Rev.1 - 2 4 of 7 www.diodes.com December 2015 © Diodes Incorporated DSS4160FDB Typical Electrical Characteristics DSS4160FDB Datasheet Number: DS37801 Rev.1 - 2 (@TA = +25°C, unless otherwise specified.) 5 of 7 www.diodes.com December 2015 © Diodes Incorporated DSS4160FDB Package Outline Dimensions Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. A A3 A1 Seating Plane D D2 D2 R0.1 50 (Pin # 1 ID) E z1 E2 z1 k L U-DFN2020-6 Type B Dim Min Max Typ A 0.545 0.605 0.575 A1 0.00 0.05 0.02 A3 0.13 b 0.20 0.30 0.25 D 1.95 2.075 2.00 D2 0.50 0.70 0.60 e 0.65 E 1.95 2.075 2.00 E2 0.90 1.10 1.00 k 0.45 L 0.25 0.35 0.30 z 0.225 z1 0.175 All Dimensions in mm e z b Suggested Pad Layout Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. X2 C Dimensions X1(2x) Y2 Y1(2x) G G1 Y C G G1 X X1 X2 Y Y1 Y2 Value (in mm) 0.650 0.150 0.450 0.350 0.600 1.650 0.500 1.000 2.300 X DSS4160FDB Datasheet Number: DS37801 Rev.1 - 2 6 of 7 www.diodes.com December 2015 © Diodes Incorporated DSS4160FDB IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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