NPT1007 Gallium Nitride 28V, 200W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for narrowband and broadband applications from from DC – 1200MHz • 200W P3dB CW power at 900MHz in quadrature combined or push-pull configuration • 90W CW power from 500-1000MHz in application design AD-014 • High efficiency from 14V to 28V • 1.0 °C/W RTH with maximum TJ rating of 200°C • Robust up to 10:1 VSWR mismatch at all angles with no device degradation • Subject to EAR99 export control DC – 1200 MHz 14 – 28 Volt GaN HEMT RF Specifications (CW): VDS = 28V, IDQ = 1400mA1, Frequency = 900MHz, TA = 25°C, Measured in Nitronex Quadrature Combined Test Fixture2. Symbol Parameter Min Typ Max Units P3dB Average Output Power at 3dB Gain Compression 52.0 53.0 - dBm GSS Small Signal Gain 17.3 18.3 - dB 63 - % h VSWR Drain Efficiency at 3dB Gain Compression21 10:1 VSWR at all phase angles 57 No change in device performance Note 1: 700mA per transistor. Each gate should be biased independently to set desired IDQ. Note 2: Includes ~ 0.2 dB quadrature combiner loss. Typical 2-Tone Performance: VDS = 28V, IDQ = 1400mA1, Frequency = 900MHz, Tone spacing = 1MHz, TA = 25°C Measured in Nitronex Quadrature Combined Test Fixture2 . Symbol Parameter Typ Units P3dB,PEP Peak Envelope Power at 3dB Gain Compression 53.4 dBm P1dB,PEP Peak Envelope Power at 1dB Gain Compression 52.6 dBm Peak Envelope Power at -35dBc IMD3 50.8 dBm PIMD3 Note 1: 700mA per transistor. Each gate should be biased independently to set desired IDQ. Note 2: Includes ~ 0.2 dB quadrature combiner loss. NPT1007 Page 1 NDS-012 Rev. 3, April 2013 NPT1007 DC Specifications: Per Transistor, TA = 25°C Symbol Parameter Min Typ Max Units 100 - - V - 9 18 mA Off Characteristics VBDS Drain-Source Breakdown Voltage (VGS = -8V, ID = 36mA) IDLK Drain-Source Leakage Current (VGS = -8V, VDS = 60V) On Characteristics VT Gate Threshold Voltage (VDS = 28V, ID = 36mA) -2.3 -1.8 -1.3 V VGSQ Gate Quiescent Voltage (VDS = 28V, ID = 700mA) -2.0 -1.5 -1.0 V RON On Resistance (VGS = 2V, ID = 270mA) - 0.13 0.14 W 19.0 20.5 - A ID,MAX Drain Current (VDS = 7V pulsed, 300ms pulse width, 0.2% duty cycle) Absolute Maximum Ratings: Not Simultaneous, Per Transistor, TA = 25°C Unless Otherwise Noted Symbol Parameter Max Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage -10 to 3 V IG Gate Current 180 mA PT Total Device Power Dissipation (Derated above 25°C), both transistors on 175 W Thermal Resistance (Junction-to-Case), composite for both transistors on, TJ = 180°C 1.0 Thermal Resistance (Junction-to-Case), one transistor on, one off, TJ = 180°C 1.8 qJC TSTG TJ Storage Temperature Range Operating Junction Temperature HBM Human Body Model ESD Rating (per JESD22-A114) MM Machine Model ESD Rating (per JESD22-A115) CDM NPT1007 Charge Device Model ESD Rating (per JESD22-C101) Page 2 °C/W -65 to 150 °C 200 °C 1C (>1000V) A (>100V) IV (>4000V) NDS-012 Rev. 3, April 2013 NPT1007 Load-Pull Data, Reference Plane at Device Leads VDS=28V, IDQ =700mA, One Single-Ended Transistor, TA=25°C Unless Otherwise Noted Table 1: Optimum Source and Load Impedances for CW Gain, Drain Efficiency, and Output Power Performance Frequency (MHz) ZS (W) ZL (W) PSAT (dBm) GSS (dB) Drain Efficiency @ PSAT (%) 500 1.4 + j0.1 2.0 + j0.5 50.0 24.0 70% 900 1.6 - j1.5 2.3 - j1.5 50.0 18.5 74% 1200 1.8 - j2.7 3.5 - j2.8 49.5 16.5 62% 73% 49.5dBm Figure 2 - Load-Pull Contours, 500MHz, PIN = 25dBm, ZS = 1.4 + j0.1 W Figure 1 - Optimum Impedances for CW Performance 67% 61% 49.5dBm Figure 3 - Load-Pull Contours, 900MHz, PIN = 30dBm, ZS = 1.6 - j1.5 W NPT1007 48.5dBm Figure 4 - Load-Pull Contours, 1200MHz, PIN = 32dBm, ZS = 1.8 - j2.7 W Page 3 NDS-012 Rev. 3, April 2013 NPT1007 Load-Pull Data per Device Lead, Reference Plane at Device Leads VDS=28V, IDQ =700mA, One Single-Ended Transistor, TA=25°C unless otherwise noted. Figure 5 - Typical CW Performance, over Frequency Figure 6 - Typical CW Performance over Frequency Figure 7 - Typical Pulsed Performance, Frequency = 900MHz, Duty Cycle = 10% Figure 8 - Typical CW Performance at VDS = 20V Frequency = 900MHz NPT1007 Page 4 NDS-012 Rev. 3, April 2013 NPT1007 Nitronex Quadrature Combined Test Fixture VDS=28V, IDQ =1400mA, TA=25°C unless otherwise noted. Figure 9 - Typical IMD3 Performance, Frequency = 900MHz, Tone spacing = 1MHz Figure 10 - Typical CW Performance over Temperature, Frequency = 900MHz Typical Device Characteristics VDS=28V, IDQ =700mA, One Single-Ended Transistor, TA=25°C unless otherwise noted. Figure 11 - Quiescient Gate Voltage (VGSQ) Required to Reach IDQ over Temperature NPT1007 Figure 12 - MTTF of NRF1 devices as a function of junction temperature Page 5 NDS-012 Rev. 3, April 2013 NPT1007 Ordering Information1 Part Number NPT1007B Description NPT1007 in AC780B-4 Metal-Ceramic Bolt-Down Package 1: To find a Nitronex contact in your area, visit our website at http://www.nitronex.com Figure 13 - AC780B-4 Metal-Ceramic Package Dimensions and Pinout (all dimensions are in inches [mm]) NPT1007 Page 6 NDS-012 Rev. 3, April 2013 NPT1007 Nitronex, LLC 2305 Presidential Drive Durham, NC 27703 USA +1.919.807.9100 (telephone) +1.919.807.9200 (fax) [email protected] www.nitronex.com Additional Information This part is lead-free and is compliant with the RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). 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All other product or service names are the property of their respective owners. © Nitronex, LLC 2012. All rights reserved. NPT1007 Page 7 NDS-012 Rev. 3, April 2013