CREE CGH35060F1 60 w, 3.3-3.6 ghz, 28v, gan hemt for wimax, broadband wireless access Datasheet

CGH35060F1 / CGH35060P1
60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access
Cree’s CGH35060F is a gallium nitride (GaN) high electron mobility transistor
(HEMT) designed specifically for high efficiency, high gain and wide bandwidth
capabilities, which makes the CGH35060F ideal for 3.3-3.6 GHz WiMAX and
BWA linear amplifier applications. The transistor is supplied in a ceramic/
metal flange and pill package. Cree GaN-on-SiC HEMTs are highly correctable,
enabling even greater efficiency when used with digital pre-distortion (DPD).
Package Type
: 440193 & 44
0196
PN: CGH3506
0F1 & CGH35
060P1
Typical Performance Over 3.3-3.6GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
3.3 GHz
3.4 GHz
3.5 GHz
3.6 GHz
Units
Small Signal Gain
11.7
12.2
12.6
12.8
dB
EVM @ 26 dBm
2.05
1.82
1.56
1.80
%
EVM @ 39 dBm
1.91
1.83
1.98
2.86
%
Drain Efficiency @ 39 dBm
22.0
23.1
24.9
26.7
%
Input Return Loss
8.0
10.3
12.5
13.1
dB
Note:
Measured in the CGH35060F1-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix,
64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3,
PAR = 9.8 dB @ 0.01 % Probability on CCDF.
ry 2016
Rev 3.1 - Februa
Features
•
3.3 - 3.6 GHz Operation
•
60 W Peak Power Capability
•
12 dB Small Signal Gain
•
8.0 W PAVE at < 2.0 % EVM
•
25 % Drain Efficiency at 8 W PAVE
•
WiMAX Fixed Access 802.16-2004 OFDM
•
WiMAX Mobile Access 802.16e OFDMA
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Units
Conditions
Drain-Source Voltage
VDSS
84
Volts
25˚C
Gate-to-Source Voltage
VGS
-10, +2
Volts
25˚C
Power Dissipation
PDISS
28
Watts
Storage Temperature
TSTG
-65, +150
˚C
Operating Junction Temperature
TJ
225
˚C
Maximum Forward Gate Current
IGMAX
15
mA
25˚C
Maximum Drain Current1
IMAX
6
A
25˚C
Soldering Temperature2
TS
245
˚C
Screw Torque
Thermal Resistance, Junction to Case3
Case Operating Temperature
3
τ
80
in-oz
RθJC
2.8
˚C/W
TC
-40, +150
˚C
85˚C
Note:
1
Current limit for long term, reliable operation.
2
Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3
Measured for the CGH35060F1 at PDISS = 28 W.
Electrical Characteristics (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.8
-3.0
–2.3
VDC
VDS = 10 V, ID = 14.4 mA
Gate Quiescent Voltage
VGS(Q)
–
-3.0
–
VDC
VDS = 28 V, ID = 250 mA
Saturated Drain Current
IDS
11.6
14.0
-
A
Drain-Source Breakdown Voltage
VBR
120
–
–
VDC
VGS = -8 V, ID = 14.4 mA
DC Characteristics1
RF Characteristics
2,3
VDS = 6.0 V, VGS = 2 V
(TC = 25˚C, F0 = 3.5 GHz unless otherwise noted)
Small Signal Gain
GSS
10
11.5
–
dB
VDD = 28 V, IDQ = 250 mA
4
η
19
23
–
%
VDD = 28 V, IDQ = 250 mA, PAVE = 8 W
Back-Off Error Vector Magnitude
EVM1
–
2.5
–
%
VDD = 28 V, IDQ = 250 mA,
PAVE = 24 dBm
Error Vector Magnitude
EVM2
–
2.0
2.5
%
VDD = 28 V, IDQ = 250 mA, PAVE = 8 W
Output Mismatch Stress
VSWR
–
–
10:1
Y
No damage at all phase angles,
VDD = 28 V, IDQ = 250 mA
Input Capacitance
CGS
–
19.0
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
CDS
–
5.9
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD
–
0.8
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Drain Efficiency
Dynamic Characteristics
Notes:
1
Measured on wafer prior to packaging.
2
Measured in the CGH35060F1-AMP test fixture.
3
Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate
Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF.
4
Drain Efficiency = POUT / PDC.
Copyright © 2008-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2
CGH35060F1 / CGH35060P1 Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
www.cree.com/rf
Typical WiMAX Performance
Gain and Return Loss vs Frequency measured in Broadband
Amplifier Circuit CGH35060F1-AMP,
VDD = 28 V, IDQ = 250 mA
S21
16
0
14
-2
-4
10
-6
8
-8
6
S11 (dB)
S21 (dB)
S21
12
-10
S11
4
-12
S21
2
-14
S11
0
-16
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
Frequency (GHz)
Typical EVM at 26 dBm and 39 dBm, and Efficiency vs Frequency measured in Broadband Amplifier Circuit
CGH35060F1-AMP, VDD = 28 V, IDQ = 250 mA
6.0
36%
EVM @ 26 dBm
5.5
33%
EVM @ 39 dBm
5.0
30%
Efficiency
4.5
27%
24%
Efficiency
EVM (%)
3.5
21%
3.0
18%
2.5
15%
2.0
12%
EVM
1.5
9%
1.0
6%
0.5
3%
0.0
3.30
3.35
3.40
3.45
3.50
Frequency (GHz)
Efficiency
4.0
3.55
3.60
3.65
0%
3.70
Note:
Under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst,
Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
Copyright © 2008-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
3
CGH35060F1 / CGH35060P1 Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
www.cree.com/rf
Typical WiMAX Performance
Drain Efficiency and Gain vs Output Power measured in the CGH35060F1-AMP,
VDD = 28 V, IDQ = 250 mA, 802.16-2004 OFDM, PAR = 9.8 dB
16
32%
15
30%
14
28%
13
26%
12
24%
Gain
11
22%
20%
Efficiency
9
18%
8
16%
7
14%
6
12%
5
10%
4
8%
3
Gain
6%
2
Efficiency
4%
1
Efficiency
Gain (dB)
10
2%
0
0%
22
24
26
28
30
32
34
36
38
40
Output Power (dBm)
Typical EVM and Efficiency vs Output Power measured in the CGH35060F1-AMP,
VDD = 28 V, IDQ = 250 mA, 802.16-2004 OFDM, PAR=9.8 dB
5.2
26%
4.8
24%
4.4
EVM
22%
4.0
Efficiency
20%
3.6
18%
16%
Efficiency
2.8
14%
2.4
12%
2.0
10%
1.6
8%
1.2
Efficiency
EVM (%)
3.2
6%
EVM
0.8
4%
2%
0.4
0%
0.0
22
24
26
28
30
32
34
36
38
40
Output Power (dBm)
Note:
Under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst,
Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
Copyright © 2008-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
4
CGH35060F1 / CGH35060P1 Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
www.cree.com/rf
Typical Performance Data
K Factor
MAG (dB)
Simulated Maximum Available Gain and K Factor of the CGH35060F1 and CGH35060P1
VDD = 28 V, IDQ = 250 mA
Typical Noise Performance
Copyright © 2008-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5
CGH35060F1 / CGH35060P1 Rev 3.1
Noise Resistance (Ohms)
Minimum Noise Figure (dB)
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH35060
VDD = 28 V, IDQ = 250 mA
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
www.cree.com/rf
Source and Load Impedances
D
Z Source
Z Load
G
S
Frequency (MHz)
Z Source
Z Load
3300
3.5 - j12.1
6.5 - j6.8
3400
3.5 - j11.4
6.0 - j5.9
3500
3.3 - j10.7
5.6 - j5.1
3600
3.2 - j10.0
5.4 - j4.3
Note : VDD = 28V, IDQ = 250mA. In the 440193 package.
Note2: Impedances are extracted from the CGH35060F1-AMP demonstration
circuit and are not source and load pull data derived from the transistor.
1
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
Class
Test Methodology
Human Body Model
HBM
1A (> 250 V)
JEDEC JESD22 A114-D
Charge Device Model
CDM
II (200 < 500 V)
JEDEC JESD22 C101-C
Copyright © 2008-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
6
CGH35060F1 / CGH35060P1 Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
www.cree.com/rf
CGH35060F1-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
Description
Qty
R1
RES, 1/16W, 0603, 1%, 5.1 OHMS
1
R2
RES, 1/16W, 0603, 1%, 100 OHMS
1
C6,C13,C19
CAP, 470pF, 5%,100V, 0603
3
C16,C22
CAP, 33 UF, 20%, G CASE
2
C15,C21
CAP, 1.0UF, 100V, 10%, X7R, 1210
2
CAP 10UF 16V TANTALUM
1
C4,C11,C17
C8
CAP, 7.5pF, +/-0.1pF, 0603, ATC
3
C1
CAP, 0.6pF, +/-0.05pF, 0603, ATC
2
C2
CAP, 1.2pF, +/-0.1pF, 0603, ATC
1
C10
CAP, 4.7pF, +/-0.25pF, 100B, ATC
3
CAP, 47pF, +/-5%, 0603, ATC
5
CAP, 33000PF, 0805, 100V, X7R
2
C5,C12,C18,C30,C31
C7,C14.C20
J2,J3
CONN, SMA, PANEL MOUNT JACK, FLANGE
2
J1
HEADER RT>PLZ .1CEN LK 5POS
1
Q1
CGH35060F1
1
CGH35060F1-TB Demonstration Amplifier Circuit
Copyright © 2008-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
7
CGH35060F1 / CGH35060P1 Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
www.cree.com/rf
CGH35060F1-AMP Demonstration Amplifier Circuit Schematic
CGH35060F1-AMP Demonstration Amplifier Circuit Outline
Copyright © 2008-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
8
CGH35060F1 / CGH35060P1 Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
www.cree.com/rf
Typical Package S-Parameters for CGH35060F1/P1
(Small Signal, VDS = 28 V, IDQ = 250 mA, angle in degrees)
Frequency
Mag S11
Ang S11
Mag S21
Ang S21
Mag S12
Ang S12
Mag S22
Ang S22
500 MHz
0.932
-170.73
7.26
79.93
0.014
-5.48
0.616
-170.30
600 MHz
0.933
-173.14
6.04
75.95
0.014
-8.53
0.624
-170.60
700 MHz
0.933
-175.02
5.17
72.27
0.014
-11.26
0.632
-170.73
800 MHz
0.934
-176.56
4.51
68.80
0.014
-13.77
0.640
-170.79
900 MHz
0.935
-177.90
3.99
65.50
0.014
-16.12
0.648
-170.84
1.0 GHz
0.936
-179.09
3.58
62.32
0.014
-18.33
0.657
-170.91
1.1 GHz
0.937
179.82
3.24
59.24
0.013
-20.41
0.666
-171.02
1.2 GHz
0.937
178.80
2.96
56.27
0.013
-22.38
0.675
-171.18
1.3 GHz
0.938
177.82
2.73
53.38
0.013
-24.25
0.684
-171.38
1.4 GHz
0.939
176.88
2.53
50.57
0.013
-26.02
0.693
-171.64
1.5 GHz
0.940
175.95
2.35
47.83
0.012
-27.69
0.702
-171.94
1.6 GHz
0.941
175.04
2.20
45.17
0.012
-29.28
0.710
-172.30
1.7 GHz
0.942
174.13
2.07
42.56
0.012
-30.78
0.718
-172.69
1.8 GHz
0.942
173.22
1.96
40.01
0.012
-32.20
0.726
-173.13
1.9 GHz
0.943
172.30
1.86
37.51
0.012
-33.53
0.733
-173.60
2.0 GHz
0.943
171.37
1.77
35.06
0.011
-34.79
0.740
-174.11
2.1 GHz
0.944
170.42
1.69
32.65
0.011
-35.98
0.746
-174.64
2.2 GHz
0.944
169.44
1.62
30.28
0.011
-37.09
0.752
-175.21
2.3 GHz
0.944
168.44
1.56
27.94
0.011
-38.14
0.757
-175.80
2.4 GHz
0.944
167.42
1.51
25.63
0.011
-39.12
0.762
-176.41
2.5 GHz
0.944
166.35
1.47
23.33
0.011
-40.03
0.767
-177.05
2.6 GHz
0.944
165.25
1.43
21.06
0.010
-40.89
0.771
-177.70
2.7 GHz
0.944
164.10
1.39
18.79
0.010
-41.69
0.775
-178.38
2.8 GHz
0.943
162.90
1.36
16.52
0.010
-42.44
0.778
-179.08
2.9 GHz
0.943
161.64
1.34
14.25
0.010
-43.15
0.780
-179.81
3.0 GHz
0.942
160.32
1.32
11.97
0.010
-43.81
0.783
179.45
3.2 GHz
0.939
157.45
1.29
7.34
0.010
-45.03
0.786
177.90
3.4 GHz
0.936
154.21
1.29
2.56
0.010
-46.16
0.787
176.26
3.6 GHz
0.932
150.50
1.30
-2.45
0.010
-47.28
0.786
174.50
3.8 GHz
0.926
146.18
1.32
-7.79
0.010
-48.49
0.783
172.62
4.0 GHz
0.918
141.08
1.37
-13.59
0.011
-49.93
0.778
170.58
4.2 GHz
0.907
134.91
1.45
-20.01
0.011
-51.79
0.770
168.35
4.4 GHz
0.893
127.31
1.55
-27.29
0.012
-54.34
0.759
165.88
4.6 GHz
0.875
117.74
1.68
-35.72
0.013
-57.92
0.745
163.12
4.8 GHz
0.851
105.40
1.85
-45.68
0.014
-62.99
0.726
159.95
5.0 GHz
0.821
89.23
2.06
-57.67
0.016
-70.09
0.701
156.25
5.2 GHz
0.788
67.93
2.29
-72.20
0.018
-79.82
0.668
151.81
5.4 GHz
0.763
40.72
2.50
-89.57
0.019
-92.51
0.624
146.32
5.6 GHz
0.760
8.85
2.62
-109.47
0.021
-107.92
0.563
139.43
5.8 GHz
0.789
-23.42
2.60
-130.80
0.021
-124.97
0.479
130.69
6.0 GHz
0.837
-51.66
2.44
-152.19
0.020
-142.29
0.367
119.31
To download the s-parameters in s2p format, go to the CGH35060F1/P1 Product Page, click on the documentation tab.
Copyright © 2008-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
9
CGH35060F1 / CGH35060P1 Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
www.cree.com/rf
Product Dimensions CGH35060F1 (Package Type —
­ 440193)
Product Dimensions CGH35060P1 (Package Type ­— 440196)
Copyright © 2008-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
10
CGH35060F1 / CGH35060P1 Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
www.cree.com/rf
Product Ordering Information
Order Number
Description
Unit of Measure
CGH35060F1
GaN HEMT
Each
CGH35060P1
GaN HEMT
Each
Test board without GaN HEMT
Each
Test board with GaN HEMT installed
Each
CGH35060F1-TB
CGH35060F1-AMP
Copyright © 2008-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
11
CGH35060F1 / CGH35060P1 Rev 3.1
Image
4.5812 in
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
www.cree.com/rf
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/RF
Sarah Miller
Marketing & Export
Cree, RF Components
919.407.5302
Ryan Baker
Marketing
Cree, RF Components
919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
919.407.5639
Copyright © 2008-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
12
CGH35060F1 / CGH35060P1 Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
www.cree.com/rf
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