CGH35060F1 / CGH35060P1 60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Cree’s CGH35060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.6 GHz WiMAX and BWA linear amplifier applications. The transistor is supplied in a ceramic/ metal flange and pill package. Cree GaN-on-SiC HEMTs are highly correctable, enabling even greater efficiency when used with digital pre-distortion (DPD). Package Type : 440193 & 44 0196 PN: CGH3506 0F1 & CGH35 060P1 Typical Performance Over 3.3-3.6GHz (TC = 25˚C) of Demonstration Amplifier Parameter 3.3 GHz 3.4 GHz 3.5 GHz 3.6 GHz Units Small Signal Gain 11.7 12.2 12.6 12.8 dB EVM @ 26 dBm 2.05 1.82 1.56 1.80 % EVM @ 39 dBm 1.91 1.83 1.98 2.86 % Drain Efficiency @ 39 dBm 22.0 23.1 24.9 26.7 % Input Return Loss 8.0 10.3 12.5 13.1 dB Note: Measured in the CGH35060F1-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF. ry 2016 Rev 3.1 - Februa Features • 3.3 - 3.6 GHz Operation • 60 W Peak Power Capability • 12 dB Small Signal Gain • 8.0 W PAVE at < 2.0 % EVM • 25 % Drain Efficiency at 8 W PAVE • WiMAX Fixed Access 802.16-2004 OFDM • WiMAX Mobile Access 802.16e OFDMA Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage VDSS 84 Volts 25˚C Gate-to-Source Voltage VGS -10, +2 Volts 25˚C Power Dissipation PDISS 28 Watts Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 15 mA 25˚C Maximum Drain Current1 IMAX 6 A 25˚C Soldering Temperature2 TS 245 ˚C Screw Torque Thermal Resistance, Junction to Case3 Case Operating Temperature 3 τ 80 in-oz RθJC 2.8 ˚C/W TC -40, +150 ˚C 85˚C Note: 1 Current limit for long term, reliable operation. 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGH35060F1 at PDISS = 28 W. Electrical Characteristics (TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.8 -3.0 –2.3 VDC VDS = 10 V, ID = 14.4 mA Gate Quiescent Voltage VGS(Q) – -3.0 – VDC VDS = 28 V, ID = 250 mA Saturated Drain Current IDS 11.6 14.0 - A Drain-Source Breakdown Voltage VBR 120 – – VDC VGS = -8 V, ID = 14.4 mA DC Characteristics1 RF Characteristics 2,3 VDS = 6.0 V, VGS = 2 V (TC = 25˚C, F0 = 3.5 GHz unless otherwise noted) Small Signal Gain GSS 10 11.5 – dB VDD = 28 V, IDQ = 250 mA 4 η 19 23 – % VDD = 28 V, IDQ = 250 mA, PAVE = 8 W Back-Off Error Vector Magnitude EVM1 – 2.5 – % VDD = 28 V, IDQ = 250 mA, PAVE = 24 dBm Error Vector Magnitude EVM2 – 2.0 2.5 % VDD = 28 V, IDQ = 250 mA, PAVE = 8 W Output Mismatch Stress VSWR – – 10:1 Y No damage at all phase angles, VDD = 28 V, IDQ = 250 mA Input Capacitance CGS – 19.0 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS – 5.9 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 0.8 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Drain Efficiency Dynamic Characteristics Notes: 1 Measured on wafer prior to packaging. 2 Measured in the CGH35060F1-AMP test fixture. 3 Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF. 4 Drain Efficiency = POUT / PDC. Copyright © 2008-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGH35060F1 / CGH35060P1 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE www.cree.com/rf Typical WiMAX Performance Gain and Return Loss vs Frequency measured in Broadband Amplifier Circuit CGH35060F1-AMP, VDD = 28 V, IDQ = 250 mA S21 16 0 14 -2 -4 10 -6 8 -8 6 S11 (dB) S21 (dB) S21 12 -10 S11 4 -12 S21 2 -14 S11 0 -16 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 Frequency (GHz) Typical EVM at 26 dBm and 39 dBm, and Efficiency vs Frequency measured in Broadband Amplifier Circuit CGH35060F1-AMP, VDD = 28 V, IDQ = 250 mA 6.0 36% EVM @ 26 dBm 5.5 33% EVM @ 39 dBm 5.0 30% Efficiency 4.5 27% 24% Efficiency EVM (%) 3.5 21% 3.0 18% 2.5 15% 2.0 12% EVM 1.5 9% 1.0 6% 0.5 3% 0.0 3.30 3.35 3.40 3.45 3.50 Frequency (GHz) Efficiency 4.0 3.55 3.60 3.65 0% 3.70 Note: Under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3. Copyright © 2008-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGH35060F1 / CGH35060P1 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE www.cree.com/rf Typical WiMAX Performance Drain Efficiency and Gain vs Output Power measured in the CGH35060F1-AMP, VDD = 28 V, IDQ = 250 mA, 802.16-2004 OFDM, PAR = 9.8 dB 16 32% 15 30% 14 28% 13 26% 12 24% Gain 11 22% 20% Efficiency 9 18% 8 16% 7 14% 6 12% 5 10% 4 8% 3 Gain 6% 2 Efficiency 4% 1 Efficiency Gain (dB) 10 2% 0 0% 22 24 26 28 30 32 34 36 38 40 Output Power (dBm) Typical EVM and Efficiency vs Output Power measured in the CGH35060F1-AMP, VDD = 28 V, IDQ = 250 mA, 802.16-2004 OFDM, PAR=9.8 dB 5.2 26% 4.8 24% 4.4 EVM 22% 4.0 Efficiency 20% 3.6 18% 16% Efficiency 2.8 14% 2.4 12% 2.0 10% 1.6 8% 1.2 Efficiency EVM (%) 3.2 6% EVM 0.8 4% 2% 0.4 0% 0.0 22 24 26 28 30 32 34 36 38 40 Output Power (dBm) Note: Under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3. Copyright © 2008-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGH35060F1 / CGH35060P1 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE www.cree.com/rf Typical Performance Data K Factor MAG (dB) Simulated Maximum Available Gain and K Factor of the CGH35060F1 and CGH35060P1 VDD = 28 V, IDQ = 250 mA Typical Noise Performance Copyright © 2008-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGH35060F1 / CGH35060P1 Rev 3.1 Noise Resistance (Ohms) Minimum Noise Figure (dB) Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH35060 VDD = 28 V, IDQ = 250 mA Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE www.cree.com/rf Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 3300 3.5 - j12.1 6.5 - j6.8 3400 3.5 - j11.4 6.0 - j5.9 3500 3.3 - j10.7 5.6 - j5.1 3600 3.2 - j10.0 5.4 - j4.3 Note : VDD = 28V, IDQ = 250mA. In the 440193 package. Note2: Impedances are extracted from the CGH35060F1-AMP demonstration circuit and are not source and load pull data derived from the transistor. 1 Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM II (200 < 500 V) JEDEC JESD22 C101-C Copyright © 2008-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGH35060F1 / CGH35060P1 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE www.cree.com/rf CGH35060F1-AMP Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R1 RES, 1/16W, 0603, 1%, 5.1 OHMS 1 R2 RES, 1/16W, 0603, 1%, 100 OHMS 1 C6,C13,C19 CAP, 470pF, 5%,100V, 0603 3 C16,C22 CAP, 33 UF, 20%, G CASE 2 C15,C21 CAP, 1.0UF, 100V, 10%, X7R, 1210 2 CAP 10UF 16V TANTALUM 1 C4,C11,C17 C8 CAP, 7.5pF, +/-0.1pF, 0603, ATC 3 C1 CAP, 0.6pF, +/-0.05pF, 0603, ATC 2 C2 CAP, 1.2pF, +/-0.1pF, 0603, ATC 1 C10 CAP, 4.7pF, +/-0.25pF, 100B, ATC 3 CAP, 47pF, +/-5%, 0603, ATC 5 CAP, 33000PF, 0805, 100V, X7R 2 C5,C12,C18,C30,C31 C7,C14.C20 J2,J3 CONN, SMA, PANEL MOUNT JACK, FLANGE 2 J1 HEADER RT>PLZ .1CEN LK 5POS 1 Q1 CGH35060F1 1 CGH35060F1-TB Demonstration Amplifier Circuit Copyright © 2008-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGH35060F1 / CGH35060P1 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE www.cree.com/rf CGH35060F1-AMP Demonstration Amplifier Circuit Schematic CGH35060F1-AMP Demonstration Amplifier Circuit Outline Copyright © 2008-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGH35060F1 / CGH35060P1 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE www.cree.com/rf Typical Package S-Parameters for CGH35060F1/P1 (Small Signal, VDS = 28 V, IDQ = 250 mA, angle in degrees) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.932 -170.73 7.26 79.93 0.014 -5.48 0.616 -170.30 600 MHz 0.933 -173.14 6.04 75.95 0.014 -8.53 0.624 -170.60 700 MHz 0.933 -175.02 5.17 72.27 0.014 -11.26 0.632 -170.73 800 MHz 0.934 -176.56 4.51 68.80 0.014 -13.77 0.640 -170.79 900 MHz 0.935 -177.90 3.99 65.50 0.014 -16.12 0.648 -170.84 1.0 GHz 0.936 -179.09 3.58 62.32 0.014 -18.33 0.657 -170.91 1.1 GHz 0.937 179.82 3.24 59.24 0.013 -20.41 0.666 -171.02 1.2 GHz 0.937 178.80 2.96 56.27 0.013 -22.38 0.675 -171.18 1.3 GHz 0.938 177.82 2.73 53.38 0.013 -24.25 0.684 -171.38 1.4 GHz 0.939 176.88 2.53 50.57 0.013 -26.02 0.693 -171.64 1.5 GHz 0.940 175.95 2.35 47.83 0.012 -27.69 0.702 -171.94 1.6 GHz 0.941 175.04 2.20 45.17 0.012 -29.28 0.710 -172.30 1.7 GHz 0.942 174.13 2.07 42.56 0.012 -30.78 0.718 -172.69 1.8 GHz 0.942 173.22 1.96 40.01 0.012 -32.20 0.726 -173.13 1.9 GHz 0.943 172.30 1.86 37.51 0.012 -33.53 0.733 -173.60 2.0 GHz 0.943 171.37 1.77 35.06 0.011 -34.79 0.740 -174.11 2.1 GHz 0.944 170.42 1.69 32.65 0.011 -35.98 0.746 -174.64 2.2 GHz 0.944 169.44 1.62 30.28 0.011 -37.09 0.752 -175.21 2.3 GHz 0.944 168.44 1.56 27.94 0.011 -38.14 0.757 -175.80 2.4 GHz 0.944 167.42 1.51 25.63 0.011 -39.12 0.762 -176.41 2.5 GHz 0.944 166.35 1.47 23.33 0.011 -40.03 0.767 -177.05 2.6 GHz 0.944 165.25 1.43 21.06 0.010 -40.89 0.771 -177.70 2.7 GHz 0.944 164.10 1.39 18.79 0.010 -41.69 0.775 -178.38 2.8 GHz 0.943 162.90 1.36 16.52 0.010 -42.44 0.778 -179.08 2.9 GHz 0.943 161.64 1.34 14.25 0.010 -43.15 0.780 -179.81 3.0 GHz 0.942 160.32 1.32 11.97 0.010 -43.81 0.783 179.45 3.2 GHz 0.939 157.45 1.29 7.34 0.010 -45.03 0.786 177.90 3.4 GHz 0.936 154.21 1.29 2.56 0.010 -46.16 0.787 176.26 3.6 GHz 0.932 150.50 1.30 -2.45 0.010 -47.28 0.786 174.50 3.8 GHz 0.926 146.18 1.32 -7.79 0.010 -48.49 0.783 172.62 4.0 GHz 0.918 141.08 1.37 -13.59 0.011 -49.93 0.778 170.58 4.2 GHz 0.907 134.91 1.45 -20.01 0.011 -51.79 0.770 168.35 4.4 GHz 0.893 127.31 1.55 -27.29 0.012 -54.34 0.759 165.88 4.6 GHz 0.875 117.74 1.68 -35.72 0.013 -57.92 0.745 163.12 4.8 GHz 0.851 105.40 1.85 -45.68 0.014 -62.99 0.726 159.95 5.0 GHz 0.821 89.23 2.06 -57.67 0.016 -70.09 0.701 156.25 5.2 GHz 0.788 67.93 2.29 -72.20 0.018 -79.82 0.668 151.81 5.4 GHz 0.763 40.72 2.50 -89.57 0.019 -92.51 0.624 146.32 5.6 GHz 0.760 8.85 2.62 -109.47 0.021 -107.92 0.563 139.43 5.8 GHz 0.789 -23.42 2.60 -130.80 0.021 -124.97 0.479 130.69 6.0 GHz 0.837 -51.66 2.44 -152.19 0.020 -142.29 0.367 119.31 To download the s-parameters in s2p format, go to the CGH35060F1/P1 Product Page, click on the documentation tab. Copyright © 2008-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGH35060F1 / CGH35060P1 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE www.cree.com/rf Product Dimensions CGH35060F1 (Package Type — 440193) Product Dimensions CGH35060P1 (Package Type — 440196) Copyright © 2008-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGH35060F1 / CGH35060P1 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGH35060F1 GaN HEMT Each CGH35060P1 GaN HEMT Each Test board without GaN HEMT Each Test board with GaN HEMT installed Each CGH35060F1-TB CGH35060F1-AMP Copyright © 2008-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGH35060F1 / CGH35060P1 Rev 3.1 Image 4.5812 in Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/RF Sarah Miller Marketing & Export Cree, RF Components 919.407.5302 Ryan Baker Marketing Cree, RF Components 919.407.7816 Tom Dekker Sales Director Cree, RF Components 919.407.5639 Copyright © 2008-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 12 CGH35060F1 / CGH35060P1 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE www.cree.com/rf