Silicon Avalanche Diodes 1500 Watt Axial Leaded Transient Voltage Suppressors ICTE/MPTE Series ® The ICTE/MPTE series 1500 W transient suppressors are designed specifically for protection of CMOS, NMOS, BiMOS, and other integrated circuits available today for TTL, DTL, ECL, RTL, and linear functions. This series offers the lowest clamping voltages. SILICON DIODE ARRAYS 6 FEATURES • Stand-off voltage range 5 to 45 Volts • Uni-directional and Bi-directional • Glass passivated junction • Very low clamping voltages • 100% surge tested MAXIMUM RATING • Peak Pulse Power (Ppk): 1500 Watts (10 x 1000µs) @25°C (see diagram on page 3 for wave form) • 5 watt steady state • Response time: 1 x 10-12 seconds (theoretical) Max 1.066 • Forward surge rating 200 Amps, 8.3ms half sine wave, (uni- directional devices only) • Operating & storage temperature: -55°C to +150°C MECHANICAL CHARACTERISTICS Min 25.4 • Case: DO-201AD: Molded plastic over glass passivated junction 4.826 5.207 • Terminals: Axial leads, solderable per MIL-STD-202 Method 208 • Solderable leads = 230°C for 10 seconds (1.59mm from case) • Marking: cathode band, (positive terminal, uni-directional 9.146 9.527 devices only), device code, logo • Weight: 1.5 grammes (approx) Agency Approvals: Recognized under the Components Program of Underwriters Laboratories. Min 25.4 Agency File Number: E128662 All dimensions in mm ORDERING INFORMATION ICTE or MPTE C Voltage Bi-Directional Packaging Option B = Bulk (500 pcs) T = Tape and reeled (1500 pcs) w w w. l i t t e l f u s e . c o m 307 Silicon Avalanche Diodes 1500 Watt Axial Leaded Transient Voltage Suppressors ICTE/MPTE Series ® 100,000 Measured at Zero Bias 100 10,000 Measured at Stand-Off Voltage (VR) Cj (pf) 10 Pp (kw) 1000 1.0 TJ=2 5°C f=1.0 MHz Vsig=50mVp-p 100 1 2 5 0.1 10 20 50 100 200 1µs 1.0µs Figure 2 - Peak Pulse Power Rating Curve ELECTRICAL SPECIFICATION @ Tamb 25°C Maximum Clamping Voltage VC @ IPP 2=10A (Volts) Maximum Peak Pulse Current IPP (A) 7.1 7.5 160.0 11.3 11.5 100.0 13.7 14.1 90.0 2.0 16.1 16.5 70.0 17.6 2.0 20.1 20.6 60.0 18.0 21.2 2.0 24.2 25.2 50.0 22.0 25.9 2.0 29.8 32.0 40.0 ICTE-36/MPTE-36 36.0 42.4 2.0 50.6 54.3 23.0 ICTE-45/MPTE-45 ICTE-8C/MPTE-8C 45.0 8.0 52.9 9.4 2.0 50.0 63.3 11.4 70.0 19.0 11.6 100.0 ICTE-10C/MPTE-10C 10.0 11.7 2.0 14.1 14.5 90.0 ICTE-12C/MPTE-12C 12.0 14.1 2.0 16.7 17.1 70.0 ICTE-15C/MPTE-15C 15.0 17.6 2.0 20.8 21.4 60.0 ICTE-18C/MPTE-18C 18.0 21.2 2.0 24.8 25.5 50.0 ICTE-22C/MPTE-22C 22.0 25.9 2.0 30.8 32.0 40.0 ICTE-36C/MPTE-36C 36.0 42.4 2.0 50.6 54.3 23.0 ICTE-45C/MPTE-45C 45.0 52.9 2.0 63.3 70.0 19.0 Reverse Standoff Voltage Vr (Volts) Minimum Breakdown Voltage Vbr @1mA (Volts) Maximum Reverse Leakage Ir @ Vr (µA) ICTE-5/MPTE-5* 5.0 6.0 300.0 ICTE-8/MPTE-8* 8.0 9.4 25.0 ICTE-10/MPTE-10 10.0 11.7 2.0 ICTE-12/MPTE-12 12.0 14.1 ICTE-15/MPTE-15 15.0 ICTE-18/MPTE-18* ICTE-22/MPTE-22 Maximum Clamping Voltage VC @ IPP 1=1A (Volts) ICTE-5 is not available in Bi-directional. Suffix ‘C’ denotes Bi-directional device. * Preferred voltages. VF max = 3.5 Volts max at IF = 50A 300µS square wave pulse 308 1.0ms Breakdown Voltage - Volts Figure 1 - Typical Junction Capacitance Part Number 100µs Pulse Width (tp) Pulse width (tp) V(BR) - 10µs w w w. l i t t e l f u s e . c o m 10ms