CYStech Electronics Corp. Spec. No. : C040FP Issued Date : 2017.09.18 Revised Date : Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTE010N10RFP BVDSS ID@TC=25°C, VGS=10V ID@TA=25°C, VGS=10V RDS(ON)@VGS=10V, ID=20A Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Insulating package, front/back side insulating voltage=2500V(AC) • RoHS compliant package Symbol 100V 52A 10A 9 mΩ(typ) Outline MTE010N10RFP TO-220FP G：Gate D：Drain S：Source G D S Ordering Information Device Package Shipping TO-220FP MTE010N10RFP-0-UB-X 50 pcs/tube, 20 tubes/box, 4 boxes / carton (Pb-free lead plating package) Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTE010N10RFP CYStek Product Specification Spec. No. : C040FP Issued Date : 2017.09.18 Revised Date : Page No. : 2/ 8 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C) Parameter Symbol Limits Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V (Note 1) Continuous Drain Current @TC=100°C, VGS=10V (Note 1) Continuous Drain Current @TA=25°C, VGS=10V (Note 2) Continuous Drain Current @TA=70°C, VGS=10V (Note 2) Pulsed Drain Current @ VGS=10V (Note 3) Single Pulse Avalanche Current @L=0.1mH (Note 3) Single Pulse Avalanche Energy @ L=1mH, ID=28 Amps, VDD=50V (Note 4) Repetitive Avalanche Energy (Note 3) TC=25°C (Note 1) TC=100°C (Note 1) Power Dissipation TA=25°C (Note 2) TA=70°C (Note 2) Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm) from case for 10 seconds Maximum Temperature for Soldering @ Package Body for 10 seconds Operating Junction and Storage Temperature VDS VGS IDM IAS 100 ±20 52* 32.9* 10 8 208* 60 EAS 392 EAR 5 54 21.6 2 1.3 ID IDSM PD PDSM Unit V A mJ W TL 300 TPKG 260 Tj, Tstg -55~+150 °C *Drain current limited by maximum junction temperature Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max (Note 2) Symbol RθJC RθJA Value 2.3 62.5 Unit °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. 100% tested by conditions of L=0.1mH, IAS=25A, VGS=10V, VDD=50V MTE010N10RFP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C040FP Issued Date : 2017.09.18 Revised Date : Page No. : 3/ 8 Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) *GFS IGSS IDSS Min. Typ. Max. Unit Test Conditions 100 2 - 0.1 20 9 4 ±100 1 25 13 V V/°C V S nA mΩ VGS=0V, ID=250μA Reference to 25°C, ID=250μA VDS = VGS, ID=250μA VDS =10V, ID=20A VGS=±20V, VDS=0V VDS =80V, VGS =0V VDS =80V, VGS =0V, Tj=125°C VGS =10V, ID=20A 41 10.2 13 21.2 21.2 43.2 12 2204 271 32 0.6 - nC ID=20A, VDS=80V, VGS=10V ns VDD=50V, ID=20A, VGS=10V, RG=1Ω pF VGS=0V, VDS=50V, f=1MHz Ω f=1MHz 0.85 32.3 38 52 208 1.2 - *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Rg Source-Drain Diode *IS *ISM *VSD *trr *Qrr - μA A V ns nC IS=20A, VGS=0V VGS=0V, IF=20A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTE010N10RFP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C040FP Issued Date : 2017.09.18 Revised Date : Page No. : 4/ 8 Typical Characteristics Brekdown Voltage vs Junction Temperature Typical Output Characteristics 1.4 10V 9V ID, Drain Current(A) 180 160 BVDSS, Normalized Drain-Source Breakdown Voltage 200 8V 140 7V 120 100 6V 80 60 VGS=4.5V 5V 40 1.2 1 0.8 ID=250μA, VGS=0V 0.6 20 0.4 0 0 2 4 6 8 VDS, Drain-Source Voltage(V) -75 -50 -25 10 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1.2 VGS=10V VSD, Source-Drain Voltage(V) R DS(ON) , Static Drain-Source On-State Resistance(mΩ) 100 10 1 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 0.1 1 10 ID, Drain Current(A) 0 100 2 4 6 8 10 12 14 16 IDR , Reverse Drain Current(A) 18 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2.4 R DS(ON) , Normalized Static DrainSource On-State Resistance 100 R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 90 ID=20A 80 70 60 50 40 30 20 10 2 VGS=10V, ID=20A 1.6 1.2 0.8 0.4 RDS(ON) @Tj=25°C : 9mΩ typ. 0 0 0 MTE010N10RFP 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C040FP Issued Date : 2017.09.18 Revised Date : Page No. : 5/ 8 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 C oss 100 Crss 1.4 1.2 ID=1mA 1 0.8 0.6 ID=250μA 0.4 0.2 10 0 10 20 30 40 VDS, Drain-Source Voltage(V) -75 -50 -25 50 50 75 100 125 150 175 Gate Charge Characteristics 100 10 VDS=10V VDS=50V VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 25 Tj, Junction Temperature(°C) Forward Transfer Admittance vs Drain Current 10 VDS=15V 1 0.1 Pulsed Ta=25°C 0.01 0.001 8 VDS=20V 6 VDS=80V 4 2 ID=20A 0 0.01 0.1 1 ID, Drain Current(A) 10 0 100 5 10 15 20 25 30 35 Total Gate Charge---Qg(nC) 40 45 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 60 RDS(ON) Limited ID, Maximum Drain Current(A) 1000 ID, Drain Current(A) 0 10 μs 100 100μs 1ms 10 10ms TC=25°C, Tj=150°C, VGS=10V,RθJC=2.3°C/W single pulse 1 100ms DC 50 40 30 20 10 VGS=10V, RθJC=2.3°C/W 0 0.1 0.1 MTE010N10RFP 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 TC , Case Temperature(°C) 150 175 CYStek Product Specification Spec. No. : C040FP Issued Date : 2017.09.18 Revised Date : Page No. : 6/ 8 CYStech Electronics Corp. Typical Characteristics(Cont.) Single Pulse Maximum Power Dissipation Typical Transfer Characteristics 5000 200 180 4500 Peak Transient Power (W) VDS=10V ID, Drain Current (A) 160 140 120 100 80 60 40 TJ(MAX) =150°C TC=25°C RθJC=2.3°C/W 4000 3500 3000 2500 2000 1500 1000 500 20 0 0 1 2 3 4 5 6 7 8 9 0 0.0001 10 0.001 VGS, Gate-Source Voltage(V) 0.01 0.1 Pulse Width(s) 1 10 Transient Thermal Response Curves r(t), Normalized Effective Transient Thermal Resistance 1 D=0.5 0.2 0.1 0.1 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=2.3 °C/W 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 t1, Square Wave Pulse Duration(s) MTE010N10RFP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C040FP Issued Date : 2017.09.18 Revised Date : Page No. : 7/ 8 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTE010N10RFP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C040FP Issued Date : 2017.09.18 Revised Date : Page No. : 8/ 8 TO-220FP Dimension Marking: Device Name E010 N10R Date Code 3-Lead TO-220FP Plastic Package CYStek Package Code: FP Style: Pin 1.Gate 2.Drain 3.Source *Typical Inches Min. Max. 0.171 0.183 0.051 REF 0.112 0.124 0.102 0.110 0.020 0.030 0.031 0.041 0.047 REF 0.020 0.030 0.396 0.404 0.583 0.598 0.100 * 0.106 REF DIM A A1 A2 A3 b b1 b2 c D E e F Millimeters Min. Max. 4.35 4.65 1.300 REF 2.85 3.15 2.60 2.80 0.50 0.75 0.80 1.05 1.20 REF 0.500 0.750 10.06 10.26 14.80 15.20 2.54* 2.70 REF DIM G H H1 H2 J K L L1 L2 M N Inches Min. Max. 0.246 0.258 0.138 REF 0.055 REF 0.256 0.272 0.031 REF 0.020 1.102 1.118 0.043 0.051 0.036 0.043 0.067 REF 0.012 REF Millimeters Min. Max. 6.25 6.55 3.50 REF 1.40 REF 6.50 6.90 0.80 REF 0.50 REF 28.00 28.40 1.10 1.30 0.92 1.08 1.70 REF 0.30 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTE010N10RFP CYStek Product Specification