Kexin MMBT3906DW Pnp transistor Datasheet

Transistors
SMD Type
PNP Transistors
MMBT3906DW
(KMBT3906DW)
■ Features
● Epitaxial planar die construction
● Ideal for low power amplification and switching
● Dual PNP Transistors
■ Absolute Maximum Ratings Ta = 25℃
Symbol
Rating
Collector - Base Voltage
Parameter
VCBO
-40
Collector - Emitter Voltage
VCEO
-40
Emitter - Base Voltage
VEBO
-5
IC
-200
PC
150
mW
RθJA
625
℃/W
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature range
TJ
150
Tstg
-55 to 150
Unit
V
mA
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Collector- base breakdown voltage
VCBO
Ic= -100 μA, IE=0
-40
Collector- emitter breakdown voltage
VCEO
Ic= -1 mA, IB=0
-40
Emitter - base breakdown voltage
VEBO
IE= -100μA, IC=0
-5
Collector-base cut-off current
ICBO
VCB= -40 V , IE=0
-100
Collector- emittercut-off current
ICEX
VCE= -30 V , VEB(OFF)= 3V
-50
Emitter cut-off current
IEBO
VEB= -5V , IC=0
-50
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Delay time
VCE(sat)
VBE(sat)
IC=-10 mA, IB=-1mA
IC=-50 mA, IB=-5mA
60
hFE(2)
VCE=- 1V, IC= -10mA
100
hFE(3)
VCE=- 1V, IC= -50mA
60
tr
Storage time
ts
Fall time
tf
NF
VCE=-5V,Ic=-0.1mA,f=1KHz,Rg=1KΩ
Cob
VCB= -5V, IC= -0.1mA,f=1MHz,Rg=1KΩ
fT
VCE= -20V, IC= -10mA,f=100MHz
V
300
35
225
VCC=-3V, IC=-10mA , IB1=-IB2=-1mA
Noise figure
-0.85
35
VCC=-3V, VBE= 0.5V
IC=-10mA , IB1=-IB2=-1mA
Collector output capacitance
nA
-0.95
VCE= -1V, IC= -0.1mA
Rise time
Transition frequency
-0.4
-0.65
hFE(1)
td
V
-0.25
IC=-50 mA, IB=-5mA
IC=-10 mA, IB=-1mA
Unit
ns
75
250
4
dB
4.5
pF
MHz
■ Marking
Marking
K3N
www.kexin.com.cn
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