Spec. No. : C050H8 Issued Date : 2017.04.05 Revised Date : 2017.04.10 Page No. : 1/11 CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET MTB9D0P03H8 Features BVDSS ID@VGS=-10V, TC=25°C -30V ID@VGS=-10V, TA=25°C VGS=-10V, ID=-20A -19.5A 7.3mΩ VGS=-4.5V, ID=-12A 12mΩ RDSON(TYP) • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Pb-free lead plating and Halogen-free package Symbol -59A Outline DFN5×6 MTB9D0P03H8 Pin 1 D D D D D D S D D G S S S S G G：Gate D：Drain S：Source S Pin 1 Ordering Information Device MTB9D0P03H8-0-T6-G Package DFN5×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTB9D0P03H8 CYStek Product Specification Spec. No. : C050H8 Issued Date : 2017.04.05 Revised Date : 2017.04.10 Page No. : 2/11 CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=-10V Continuous Drain Current @ TC=100°C, VGS=-10V Continuous Drain Current @ TA=25°C, VGS=-10V Continuous Drain Current @ TA=70°C, VGS=-10V Pulsed Drain Current Avalanche Current@L=0.1mH Avalanche Energy @ L=1mH, ID=-16A, VDD=-15V TC=25℃ TC=100℃ Total Power Dissipation TA=25°C TA=70°C 10s VDS VGS (Note1) (Note1) (Note2) (Note2) (Note3) (Note4) (Note4) (Note1) (Note1) (Note2) (Note2) Operating Junction and Storage Temperature Range -30 ±20 -59 -37.3 ID IDSM -19.5 -15.6 IDM IAS EAS Tj, Tstg Unit V -11.6 -9.3 -210 -34 128 60 24 PD PDSM Steady State 6.5 2.3 4.5 1.6 -55~+150 A mJ W °C Thermal Data Parameter Thermal Resistance, Junction-to-case Thermal Resistance, Junction-to-ambient Symbol Rth,j-c (Note2) t≤10s Steady State Rth,j-a Typical Maximum 2.2 2.5 18 23 50 65 Unit °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. 3. Pulse width limited by junction temperature TJ(MAX)=150°C. 4. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 100% tested by conditions of L=0.1mH, IAS=-10A, VGS=-10V, VDD=-15V. Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS *1 IGSS IDSS RDS(ON) *1 MTB9D0P03H8 Min. Typ. Max. -30 -1 - 14.7 7.3 12 -2.5 ±100 -1 -10 10 17 Unit V S nA μA mΩ Test Conditions VGS=0V, ID=-250μA VDS = VGS, ID=-250μA VDS =-10V, ID=-5A VGS=±20V, VDS=0V VDS =-24V, VGS =0V VDS =-24V, VGS =0, Tj=70°C VGS =-10V, ID=-20A VGS =-4.5V, ID=-12A CYStek Product Specification CYStech Electronics Corp. Dynamic *4 Ciss Coss Crss Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Rg Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr - 2177 235 171 49.6 7.3 11.4 14.6 22.6 72.6 16.4 4 - -0.87 32.3 12.9 -50 -200 -1.2 - Spec. No. : C050H8 Issued Date : 2017.04.05 Revised Date : 2017.04.10 Page No. : 3/11 pF VDS=-25V, VGS=0V, f=1MHz nC VDS=-15V, VGS=-10V, ID=-12A ns VDS=-15V, ID=-12A, VGS=-10V RG=1Ω Ω f=1MHz A V ns nC IS=-20A, VGS=0V IF=-1A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. *4.Guaranteed by design, not subject to production testing. MTB9D0P03H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C050H8 Issued Date : 2017.04.05 Revised Date : 2017.04.10 Page No. : 4/11 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 200 -10V -6V -BVDSS, Normalized Drain-Source Breakdown Voltage 180 -I D, Drain Current (A) 160 140 -5V 120 100 -4.5V 80 -4V 60 40 -3.5V 20 VGS=-3V 1.2 1.0 0.8 ID=-250μA, VGS=0V 0.6 0.4 0 0 1 2 3 4 -VDS, Drain-Source Voltage(V) -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 5 Source Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 100 1.2 -VSD , Source-Drain Voltage(V) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=0V VGS=-4.5V 10 VGS=-10V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 1 0.01 0.1 1 -ID, Drain Current(A) 10 0 100 R DS(on) , Normalized Static Drain-Source On-State Resistance R DS(on) , Static Drain-Source On-State Resistance(mΩ) 45 ID=-20A 35 30 25 20 15 10 5 0 MTB9D0P03H8 2 4 6 8 -VGS, Gate-Source Voltage(V) 8 10 2.4 50 0 4 6 -IS , Source Drain Current(A) Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 40 2 10 2.0 VGS=-10V, ID=-20A 1.6 1.2 0.8 0.4 RDS(ON) @Tj=25°C : 7.3mΩ typ. 0.0 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C050H8 Issued Date : 2017.04.05 Revised Date : 2017.04.10 Page No. : 5/11 Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage 1.4 -VGS(th) , Threshold Voltage(V) Capacitance---(pF) 10000 Ciss 1000 C oss 1.2 ID=-1mA 1 0.8 0.6 ID=-250μA Crss 0.4 100 0 5 10 15 20 25 -VDS, Drain-Source Voltage(V) -75 -50 -25 30 Maximum Safe Operating Area Gate Charge Characteristics 10 1000 100μs 1ms 10ms 10 100ms 1 1s TA=25°C, Tj=150°C, VGS=-10V RθJA=23°C/W, Single Pulse 0.1 DC -VGS, Gate-Source Voltage(V) -I D, Drain Current(A) VDS=-15V RDS(ON) Limited 100 0.01 8 6 VDS=-20V 4 2 ID=-12A 0 0.01 0.1 1 10 -ID, Drain-Source Voltage(V) 100 0 6 12 18 24 30 36 42 48 Qg, Total Gate Charge(nC) 54 60 Forward Transfer Admittance vs Drain Current Maximum Drain Current vs Junction Temperature 100 GFS, Forward Transfer Admittance(S) 25 -I D, Maximum Drain Current(A) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 20 15 10 TA=25°C, Tj=150°C, VGS=-10V RθJA=23°C/W 5 0 25 MTB9D0P03H8 50 75 100 125 150 Tj, Junction Temperature(°C) 175 10 1 VDS=-10V Pulsed TA=25°C 0.1 0.01 0.001 0.01 0.1 1 -ID, Drain Current(A) 10 100 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C050H8 Issued Date : 2017.04.05 Revised Date : 2017.04.10 Page No. : 6/11 Typical Characteristics(Cont.) Single Pulse Power Rating, Junction to Ambient (Note on page 2) Typical Transfer Characteristics 200 300 180 VDS=-10V 250 140 Power (W) -I D, Drain Current (A) 160 120 100 80 TJ(MAX) =150°C TA=25°C RθJA=23°C/W 200 150 100 60 40 50 20 0 0 1 2 3 4 5 6 7 8 -VGS, Gate-Source Voltage(V) 9 0 0.0001 10 Maximum Drain Current vs Case Temperature 0.01 0.1 1 Pulse Width(s) 10 100 Maximum Safe Operating Area 60 1000 50 -I D, Drain Current (A) -I D, Maximum Drain Current(A) 0.001 40 30 20 VGS=-10V, RθJC=2.5°C/W 10 0 RDSON Limited 100 100μs 1ms 10 10ms 100ms DC 1 TC=25°C, VGS=-10V,Tj=150°C RθJC=2.5°C/W, Single Pulse 0.1 25 50 75 100 125 TC , Case Temperature(°C) 150 175 0.1 1 10 -VDS, Drain-Source Voltage(V) 100 Single Pulse Maximum Power Dissipation 600 Power (W) 500 TJ(MAX) =150°C TC=25°C RθJC=2.5°C/W 400 300 200 100 0 0.0001 MTB9D0P03H8 0.001 0.01 0.1 Pulse Width(s) 1 10 CYStek Product Specification Spec. No. : C050H8 Issued Date : 2017.04.05 Revised Date : 2017.04.10 Page No. : 7/11 CYStech Electronics Corp. Typical Characteristics(Cont.) Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM -TA=PDM*RθJA(t) 4.RθJA=23 °C/W 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 t1, Square Wave Pulse Duration(s) 1.E+01 1.E+02 1.E+03 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 1.RθJC (t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=2.5°C/W 0.1 0.1 0.05 0.02 0.01 0.01 0.0001 MTB9D0P03H8 Single Pulse 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) 1 10 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C050H8 Issued Date : 2017.04.05 Revised Date : 2017.04.10 Page No. : 8/11 Recommended Soldering Footprint & Stencil Design unit : mm MTB9D0P03H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C050H8 Issued Date : 2017.04.05 Revised Date : 2017.04.10 Page No. : 9/11 Reel Dimension Carrier Tape Dimension Pin #1 MTB9D0P03H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C050H8 Issued Date : 2017.04.05 Revised Date : 2017.04.10 Page No. : 10/11 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note :1. All temperatures refer to topside of the package, measured on the package body surface. 2.For devices mounted on FR-4 PCB of 1.6mm or equivalent grade PCB. If other grade PCB is used, care should be taken to match the coefficients of thermal expansion between components and PCB. If they are not matched well, the solder joints may crack or the bodies of the parts may crack or shatter as the assembly cools. MTB9D0P03H8 CYStek Product Specification Spec. No. : C050H8 Issued Date : 2017.04.05 Revised Date : 2017.04.10 Page No. : 11/11 CYStech Electronics Corp. DFN5×6 Dimension Marking : Device Name Date Code B9D0 P03 8-Lead DFN5×6 Plastic Package CYS Package Code : H8 Millimeters Min. Max. 0.900 1.000 0.254 REF 4.944 5.096 5.974 6.126 3.910 4.110 3.375 3.575 4.824 4.976 5.674 5.826 DIM A A3 D E D1 E1 D2 E2 Inches Min. Max. 0.035 0.039 0.010 REF 0.195 0.201 0.235 0.241 0.154 0.162 0.133 0.141 0.190 0.196 0.223 0.229 DIM k b e L L1 H θ Millimeters Min. Max. 1.190 1.390 0.350 0.450 1.270 TYP. 0.559 0.711 0.424 0.576 0.574 0.726 10° 12° Inches Min. Max. 0.047 0.055 0.014 0.018 0.050 TYP. 0.022 0.028 0.017 0.023 0.023 0.029 10° 12° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB9D0P03H8 CYStek Product Specification