IS31AP2036 HIGH EFFICIENCY, CLASS-K AUDIO POWER AMPLIFIER WITH INTEGRATED CHARGE PUMP CONVERTER Advanced Information January 2014 GENERAL DESCRIPTION FEATURES The IS31AP2036 is a Class-K audio power amplifier with high efficiency and automatic gain control. It drives up to 2.0W (10% THD+N) into an 8Ω speaker from a 4.2V VCC supply. The IS31AP2036 integrates advanced K-charge pump which increases efficiency up to 92% and whole power amplifier efficiency to 75%. The output power will be maintained in 0.8W, 1.0W and 1.2W. The IS31AP2036 provides low cost, space saving solution for portable equipments which need audio output with higher power by boosting up supply voltage. Its external components just include a few capacitors and resistors (no inductor). The IS31AP2036 use fully differential design to reduce RF noise. The IS31AP2036 integrates de-pop circuitry to reduce pop and click noise during power on/off or shutdown enable operation. The IS31AP2036 also integrates thermal and short circuit protection function. IS31AP2036 is available in FC-16 (2mm × 2mm) package. It operates from 3.0V to 5.0V over the temperature range of -40°C to +85°C. Operates from 3.0V to 5.0V Advanced K-charge pump technology, efficiency up to 92% Low EMI -65dB (217Hz) high PSRR 0.2% low THD+N New AGC function Pulse Count Control serial interface Output power in 0.8W, 1W and 1.2W levels Thermal and short-circuit protection Integrated Click-and-Pop suppression circuitry Available in FC-16 (2mm × 2mm) package APPLICATIONS Smart phones Cellular phones PDAs GPS Portable electronics TYPICAL APPLICATION CIRCUIT Figure 1 Typical Application Circuit (Differential Input) Integrated Silicon Solution, Inc. – www.issi.com Rev. 00A, 12/23/2013 1 IS31AP2036 VBattery A3,B3 10 F VCC PVCC D3 0.1 F 4.7 F C1N A4 Mode Control C1P SDB C2N IS31AP2036 100k C2P C1 D2 2.2 F B1,B2 D1 2.2 F B4 OUT Single-ended Input CIN 15nF RIN 3k 1nF A1 IN+ D4 OUT 220pF 1nF A2 CIN 15nF IN- GND C2~C4 RIN 3k Figure 2 Typical Application Circuit (Single-ended Input) Integrated Silicon Solution, Inc. – www.issi.com Rev. 00A, 12/23/2013 2 IS31AP2036 PIN CONFIGURATION Package Pin Configuration (Top View) FC-16 IN+ IN- VCC SDB A1 A2 A3 A4 C2N C2N VCC OUT+ B1 B2 B3 B4 C1N GND GND GND C1 C2 C3 C4 C2P C1P PVCC OUT- D1 D2 D3 D4 PIN DESCRIPTION No. Pin Description A1 IN+ Positive audio input. A2 IN- Negative audio input. A3, B3 VCC Power supply. A4 SDB Shutdown pin. Active low. B1, B2 C2N Negative input for external flying cap 2. B4 OUT+ Positive audio output. C1 C1N Negative input for external flying cap 1. C2~C4 GND Amplifier supply voltage. D1 C2P Positive input for external flying cap 2. D2 C1P Positive input for external flying cap 1. D3 PVCC Charge pump output voltage. D4 OUT- Negative audio output. Integrated Silicon Solution, Inc. – www.issi.com Rev. 00A, 12/23/2013 3 IS31AP2036 ORDERING INFORMATION (TBD) INDUSTRIAL RANGE: -40°C TO +85°C Order Part No. Package QTY/Reel IS31AP2036-xxLS2-TR FC-16, Lead-free 2500 Copyright © 2013 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized; b.) the user assume all such risks; and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc. – www.issi.com Rev. 00A, 12/23/2013 4 IS31AP2036 ABSOLUTE MAXIMUM RATINGS Supply voltage, VCC Voltage at IN+ and IN- pins Maximum junction temperature, TJMAX Storage temperature range, TSTG Operating temperature range, TA Thermal resistance, junction to ambient, RθJA ESD (HBM) ESD (CDM) -0.3V ~ +6.0V -0.3V ~ VCC+0.3V 125°C -65°C ~ +150°C -40°C ~ +85°C 69°C/W TBD TBD Note: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. DC CHARACTERISTICS (TBD) TA = 25°C, VCC = 3.0V ~ 5.0V, unless otherwise noted. Typical value are TA = 25°C, VCC = 3.6V. Symbol Parameter Condition VCC Supply voltage ICC Quiescent current VCC = 3.6V, no load, no input ISD Shutdown current VCC =3.6V, VSDB = 0V fOSC Clock frequency VCC = 2.5V~4.5V AV Output gain RIN = 3kΩ tON Turn on time Min. Typ. 3.0 5.0 9.5 600 -30 800 V mA 1 µA 1000 kHz 16.3 V/V 40 ms |VOS| Output offset voltage RINT Internal input resistor VIH Input logic high voltage 1.3 VCC V VIL Input logic low voltage 0 0.35 V TAGC VCC = 2.5V~4.5V, no input Max. Unit Thermal AGC threshold temperature Over temperature protection TTOP_HYS Hysteresis temperature 30 16.5 mV kΩ 150 °C 20 °C (Note 1) 160 °C (Note 1) 30 °C 1.5VCC V VCC >3.8V 5.8 V TAGC_HYS Thermal AGC hysteresis temperature TOTP 0 K-Charge Pump VCC = 3.0V~3.8V PVCC Charge pump output voltage VHYS OVP hysteresis voltage VCC >3.8V 50 mV η Efficiency VCC = 4.2V 92 % tST Soft start time COUT = 4.7µF, no load IL PVCC short to GND limit current Integrated Silicon Solution, Inc. – www.issi.com Rev. 00A, 12/23/2013 1.0 1.2 350 1.4 ms mA 5 IS31AP2036 AC CHARACTERISTICS (Note 1) TA = 25°C, VCC = 3.6V, unless otherwise noted. Symbol Po PNCN THD+N tWU η PSRR Parameter Output power, Mode 4 NCN output power Condition THD+N = 10%, f = 1kHz RL = 8Ω+33µH THD+N = 1%, f = 1kHz RL = 8Ω+33µH Min. VCC = 3.6V 1.5 VCC = 4.2V 2.0 VCC = 3.6V 1.23 VCC = 4.2V 1.65 Mode 1 VCC = 4.2V, RL = 8Ω+33µH, Mode 2 THD+N = 0.25% Mode 3 Unit W W 1.0 0.8 0.2 % 0.2 Wake-up time from shutdown Power supply rejection ratio Max. 1.2 VCC = 4.2V, PO = 1W, RL = 8Ω+33µH f Total harmonic distortion = 1kHz, Mode 1 plus noise VCC = 4.2V, PO = 1.2W, RL = 8Ω+33µH f = 1kHz, Mode 4 Efficiency Typ. VCC = 4.2V, PO = 1.2W, RL = 8Ω 40 ms 75 % VCC = 4.2V, VP-P = 200mV, RL = 8Ω, f = 217Hz -53 -65 VCC = 4.2V, VP-P = 200mV, RL = 8Ω, f = 1kHz -53 -65 dB NCN tAT Attack time 40 ms tRL Release time 1.2 s -13.5 dB Amax Max attenuation gain Pulse Count Control tL Mode control low time VCC = 2.5V~4.5V 0.75 2 10 μs tH Mode control high time VCC = 2.5V~4.5V 0.75 2 10 μs tLAT Mode latch up time VCC = 2.5V~4.5V 150 500 μs tOFF Shutdown time VCC = 2.5V~4.5V 150 500 μs Note 1: Guaranteed by design. Integrated Silicon Solution, Inc. – www.issi.com Rev. 00A, 12/23/2013 6 IS31AP2036 CLASSIFICATION REFLOW PROFILES Profile Feature Pb-Free Assembly Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) 150°C 200°C 60-120 seconds Average ramp-up rate (Tsmax to Tp) 3°C/second max. Liquidous temperature (TL) Time at liquidous (tL) 217°C 60-150 seconds Peak package body temperature (Tp)* Max 260°C Time (tp)** within 5°C of the specified classification temperature (Tc) Max 30 seconds Average ramp-down rate (Tp to Tsmax) 6°C/second max. Time 25°C to peak temperature 8 minutes max. Figure 13 Classification Profile Integrated Silicon Solution, Inc. – www.issi.com Rev. 00A, 12/23/2013 7 IS31AP2036 PACKAGE INFORMATION FC-16 (TBD) Note: All dimensions in millimeters unless otherwise stated. Integrated Silicon Solution, Inc. – www.issi.com Rev. 00A, 12/23/2013 8