Vishay ETH0806-M3 Hyperfast rectifier, 8 a fred pt Datasheet

VS-ETH0806-M3, VS-ETH0806FP-M3
Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt®
FEATURES
• Hyperfast soft recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
2L TO-220AC
• Fully isolated package (VINS = 2500 VRMS)
2L TO-220 FULL-PAK
• True 2 pin package
Base
cathode
2
• Compliant to RoHS Directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21 definition
• Designed and qualified according to JEDEC-JESD47
3
Anode
1
Cathode
VS-ETH0806-M3
2
Anode
1
Cathode
DESCRIPTION/APPLICATIONS
Hyperfast recovery rectifiers designed with optimized
performance of forward voltage drop, hyperfast recovery
time, and soft recovery.
VS-ETH0806FP-M3
PRODUCT SUMMARY
Package
2L TO-220AC, 2L TO-220FP
IF(AV)
8A
VR
600 V
VF at IF
2.65 V
trr (typ.)
16 ns
TJ max.
175 °C
Diode variation
Single die
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS, inverters or as freewheeling
diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Peak repetitive reverse voltage
VRRM
Average rectified forward current in DC
IF(AV)
FULL-PAK
Non-repetitive peak surge current
IFSM
Operating junction and storage temperatures
TEST CONDITIONS
VALUES
UNITS
600
V
TC = 146 °C
8
TC = 114 °C
TJ = 25 °C
A
80
TJ, TStg
- 65 to 175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
SYMBOL
VBR,
VR
TEST CONDITIONS
MIN.
TYP.
MAX.
600
-
-
IF = 8 A
-
2.0
2.65
IF = 8 A, TJ = 150 °C
-
1.3
1.85
VR = VR rated
-
0.02
12
TJ = 150 °C, VR = VR rated
-
15
100
IR = 100 μA
UNITS
V
Forward voltage
VF
Reverse leakage current
IR
Junction capacitance
CT
VR = 600 V
-
6
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
8
-
nH
Document Number: 93515
Revision: 10-Mar-11
μA
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ETH0806-M3, VS-ETH0806FP-M3
Hyperfast Rectifier, 8 A FRED Pt®
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
trr
TEST CONDITIONS
IRRM
Reverse recovery charge
Qrr
Reverse recovery time
trr
Peak recovery current
IRRM
Reverse recovery charge
TYP.
MAX.
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V
-
16
23
IF = 8 A, dIF/dt = 100 A/μs, VR = 30 V
-
20
28
TJ = 25 °C
-
21
-
-
39
-
TJ = 125 °C
Peak recovery current
MIN.
TJ = 25 °C
TJ = 125 °C
IF = 8 A
dIF/dt = 200 A/μs
VR = 390 V
-
3
-
-
5
-
TJ = 25 °C
-
36
-
TJ = 125 °C
-
108
-
-
30
-
TJ = 125 °C
Qrr
IF = 8 A
dIF/dt = 600 A/μs
VR = 390 V
UNITS
ns
A
nC
ns
-
13
-
A
-
205
-
nC
MIN.
TYP.
MAX.
UNITS
- 65
-
175
°C
-
2.0
2.6
-
4.6
5.5
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
Thermal resistance,
junction to case
FULL-PAK
TEST CONDITIONS
TJ, TStg
RthJC
Thermal resistance,
junction to ambient
RthJA
Typical socket mount
-
-
70
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth and
greased
-
0.5
-
-
2
-
-
0.07
-
oz.
-
12
(10)
kgf · cm
(lbf · in)
Weight
6
(5)
Mounting torque
Marking device
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2
Case style 2L TO-220AC
Case style 2L TO-220 FULL-PAK
°C/W
g
ETH0806
ETH0806FP
For technical questions within your region, please contact one of the following:
Document Number: 93515
[email protected], [email protected], [email protected]
Revision: 10-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ETH0806-M3, VS-ETH0806FP-M3
Hyperfast Rectifier, 8 A FRED Pt®
Vishay Semiconductors
100
100
175°C
150°C
Reverse Current - IR (µA)
10
10
100°C
75°C
0.1
50°C
0.01
25°C
0.001
0.0001
0
100
200
300
400
500
600
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
Tj = 150°C
1
Junction Capacitance - CT (pF)
Instantaneous Forward Current - IF (A)
Tj = 175°C
125°C
1
Tj = 25°C
100
10
0.1
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
Forward Voltage Drop - VF (V)
100
200
300
400
500
600
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Fig. 1 - Typical Forward Voltage Drop Characteristics
Thermal Impedance ZthJC (°C/W)
10
D = 0.5
1
D = 0.2
D = 0.1
D = 0.05
0.1
D = 0.02
D = 0.01
0.01
1E-05
Single Pulse
(Thermal Resistance)
1E-04
1E-03
1E-02
1E-01
1E+00
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Document Number: 93515
Revision: 10-Mar-11
For technical questions within your region, please contact one of the following:
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[email protected], [email protected], [email protected]
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ETH0806-M3, VS-ETH0806FP-M3
Hyperfast Rectifier, 8 A FRED Pt®
Vishay Semiconductors
Thermal Impedance ZthJC (°C/W)
10
D = 0.5
D = 0.2
1
D = 0.1
D = 0.05
Single Pulse
(Thermal Resistance)
D = 0.02
D = 0.01
0.1
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
1E+02
t1, Rectangular Pulse Duration (Seconds)
Fig. 5 - Maximum Thermal Impedance ZthJC Characteristics (FULL-PAK)
180
Allowable Case Temperature (°C)
Allowable Case Temperature (°C)
180
170
160
DC
150
140
130
160
140
DC
120
100
80
60
120
0
0
2
4
6
8
10
Average Forward Current - IF(AV)(A)
2
4
6
8
10
Average Forward Current - IF(AV)(A)
Fig. 6 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Maximum Allowable Case Temperature vs.
Average Forward Current (FULL-PAK)
Average Power Loss ( Watts )
20
18
RMS Limit
16
14
12
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
10
8
6
4
2
0
0
2
4
6
8
10
12
Average Forward Current - IF(AV) (A)
Fig. 8 - Forward Power Loss Characteristics
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For technical questions within your region, please contact one of the following:
Document Number: 93515
[email protected], [email protected], [email protected]
Revision: 10-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ETH0806-M3, VS-ETH0806FP-M3
Hyperfast Rectifier, 8 A FRED Pt®
360
3500
320
3000
Vishay Semiconductors
If = 8A, 125°C
2500
240
If = 8A, 125°C
200
160
2000
Qrr ( nC )
trr ( ns )
280
If = 8A, 25°C
1500
1000
If = 8A, 25°C
120
500
typical value
typical value
80
0
100
1000
100
di F /dt (A/µs )
Fig. 9 - Typical Reverse Recovery vs. dIF/dt
1000
di F /dt (A/µs )
Fig. 10 - Typical Stored Charge vs. dIF/dt
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 11 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 12 - Reverse Recovery Waveform and Definitions
Document Number: 93515
Revision: 10-Mar-11
For technical questions within your region, please contact one of the following:
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[email protected], [email protected], [email protected]
5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ETH0806-M3, VS-ETH0806FP-M3
Hyperfast Rectifier, 8 A FRED Pt®
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
E
T
H
08
06
FP
-M3
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Circuit configuration:
E = Single diode
3
-
T = TO-220
4
-
H = Hyperfast recovery time
5
-
Current code: 08 = 8 A
6
-
Voltage code: 06 = 600 V
7
-
None = TO-220
FP = FULL-PAK
8
-
Environmental digit:
-M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER TUBE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-ETH0806-M3
50
1000
Antistatic plastic tube
VS-ETH0806FP-M3
50
1000
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
www.vishay.com
6
2L TO-220AC
www.vishay.com/doc?95259
2L TO-220 FULL-PAK
www.vishay.com/doc?95260
2L TO-220AC
www.vishay.com/doc?95391
2L TO-220 FULL-PAK
www.vishay.com/doc?95392
For technical questions within your region, please contact one of the following:
Document Number: 93515
[email protected], [email protected], [email protected]
Revision: 10-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay High Power Products
True 2 Pin TO-220
DIMENSIONS in millimeters and inches
0.002"
0.05 mm
A
A
E
ØP
F
B
Q
H1
D
Term. 4
0.150" REF.
45°
Ø 2.0 mm REF.
L1
b1
L
b
c
60°
1
2
J1
e
SYMBOL
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.32
4.57
0.170
0.180
b
0.71
0.91
0.028
0.036
b1
1.15
1.39
0.045
0.055
c
0.36
0.53
0.014
0.021
D
14.99
15.49
0.590
0.610
E
10.04
10.41
0.395
0.410
e
5.08 BSC
0.200 BSC
F
1.22
1.37
0.048
0.054
H1
5.97
6.47
0.235
0.255
J1
2.54
2.79
0.100
0.110
L
13.47
13.97
0.530
0.550
(1)
3.31
3.81
0.130
0.150
ØP
3.79
3.88
0.149
0.153
Q
2.60
2.84
0.102
0.112
L1
Notes
(1) Lead dimension and finish uncontrolled in L
1
• These dimensions are within allowable dimensions of JEDEC TO-220AB rev. J outline dated 3-24-87
• Controling dimension: Inch
Document Number: 95259
Revision: 21-Jan-10
For technical questions concerning discrete products, contact: [email protected]
For technical questions concerning module products, contact: [email protected]
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Outline Dimensions
Vishay High Power Products
True 2 Pin TO-220 FULL-PAK
DIMENSIONS in millimeters and inches
A
ØQ
F
E
Q1
H1
D
Q2
θ
L1
b1
L
b
C
e
J1
SYMBOL
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.53
4.93
0.178
0.194
b
0.71
0.91
0.028
0.036
b1
1.15
1.39
0.045
0.055
C
0.36
0.53
0.014
0.021
D
15.67
16.07
0.617
0.633
E
9.96
10.36
0.392
e
5.08 typical
0.408
0.200 typical
F
2.34
2.74
0.092
0.107
H1
6.50
6.90
0.256
0.272
J1
2.56
2.96
0.101
0.117
L
12.78
13.18
0.503
0.519
0.104
L1
2.23
2.63
0.088
ØQ
2.98
3.38
0.117
0.133
Q1
3.10
3.50
0.122
0.138
Q2
14.80
15.20
0.583
0.598
θ
0°
5°
0°
5°
Document Number: 95260
Revision: 22-Jan-10
For technical questions concerning discrete products, contact: [email protected]
For technical questions concerning module products, contact: [email protected]
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Disclaimer
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operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Document Number: 91000
Revision: 11-Mar-11
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