VS-ETH0806-M3, VS-ETH0806FP-M3 Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt® FEATURES • Hyperfast soft recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current 2L TO-220AC • Fully isolated package (VINS = 2500 VRMS) 2L TO-220 FULL-PAK • True 2 pin package Base cathode 2 • Compliant to RoHS Directive 2002/95/EC • Halogen-free according to IEC 61249-2-21 definition • Designed and qualified according to JEDEC-JESD47 3 Anode 1 Cathode VS-ETH0806-M3 2 Anode 1 Cathode DESCRIPTION/APPLICATIONS Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. VS-ETH0806FP-M3 PRODUCT SUMMARY Package 2L TO-220AC, 2L TO-220FP IF(AV) 8A VR 600 V VF at IF 2.65 V trr (typ.) 16 ns TJ max. 175 °C Diode variation Single die The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes. The extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Peak repetitive reverse voltage VRRM Average rectified forward current in DC IF(AV) FULL-PAK Non-repetitive peak surge current IFSM Operating junction and storage temperatures TEST CONDITIONS VALUES UNITS 600 V TC = 146 °C 8 TC = 114 °C TJ = 25 °C A 80 TJ, TStg - 65 to 175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 8 A - 2.0 2.65 IF = 8 A, TJ = 150 °C - 1.3 1.85 VR = VR rated - 0.02 12 TJ = 150 °C, VR = VR rated - 15 100 IR = 100 μA UNITS V Forward voltage VF Reverse leakage current IR Junction capacitance CT VR = 600 V - 6 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8 - nH Document Number: 93515 Revision: 10-Mar-11 μA For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETH0806-M3, VS-ETH0806FP-M3 Hyperfast Rectifier, 8 A FRED Pt® Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr TEST CONDITIONS IRRM Reverse recovery charge Qrr Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge TYP. MAX. IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V - 16 23 IF = 8 A, dIF/dt = 100 A/μs, VR = 30 V - 20 28 TJ = 25 °C - 21 - - 39 - TJ = 125 °C Peak recovery current MIN. TJ = 25 °C TJ = 125 °C IF = 8 A dIF/dt = 200 A/μs VR = 390 V - 3 - - 5 - TJ = 25 °C - 36 - TJ = 125 °C - 108 - - 30 - TJ = 125 °C Qrr IF = 8 A dIF/dt = 600 A/μs VR = 390 V UNITS ns A nC ns - 13 - A - 205 - nC MIN. TYP. MAX. UNITS - 65 - 175 °C - 2.0 2.6 - 4.6 5.5 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range Thermal resistance, junction to case FULL-PAK TEST CONDITIONS TJ, TStg RthJC Thermal resistance, junction to ambient RthJA Typical socket mount - - 70 Typical thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.5 - - 2 - - 0.07 - oz. - 12 (10) kgf · cm (lbf · in) Weight 6 (5) Mounting torque Marking device www.vishay.com 2 Case style 2L TO-220AC Case style 2L TO-220 FULL-PAK °C/W g ETH0806 ETH0806FP For technical questions within your region, please contact one of the following: Document Number: 93515 [email protected], [email protected], [email protected] Revision: 10-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETH0806-M3, VS-ETH0806FP-M3 Hyperfast Rectifier, 8 A FRED Pt® Vishay Semiconductors 100 100 175°C 150°C Reverse Current - IR (µA) 10 10 100°C 75°C 0.1 50°C 0.01 25°C 0.001 0.0001 0 100 200 300 400 500 600 Reverse Voltage - VR (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 1000 Tj = 150°C 1 Junction Capacitance - CT (pF) Instantaneous Forward Current - IF (A) Tj = 175°C 125°C 1 Tj = 25°C 100 10 0.1 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 Forward Voltage Drop - VF (V) 100 200 300 400 500 600 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 1 - Typical Forward Voltage Drop Characteristics Thermal Impedance ZthJC (°C/W) 10 D = 0.5 1 D = 0.2 D = 0.1 D = 0.05 0.1 D = 0.02 D = 0.01 0.01 1E-05 Single Pulse (Thermal Resistance) 1E-04 1E-03 1E-02 1E-01 1E+00 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 93515 Revision: 10-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETH0806-M3, VS-ETH0806FP-M3 Hyperfast Rectifier, 8 A FRED Pt® Vishay Semiconductors Thermal Impedance ZthJC (°C/W) 10 D = 0.5 D = 0.2 1 D = 0.1 D = 0.05 Single Pulse (Thermal Resistance) D = 0.02 D = 0.01 0.1 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01 1E+02 t1, Rectangular Pulse Duration (Seconds) Fig. 5 - Maximum Thermal Impedance ZthJC Characteristics (FULL-PAK) 180 Allowable Case Temperature (°C) Allowable Case Temperature (°C) 180 170 160 DC 150 140 130 160 140 DC 120 100 80 60 120 0 0 2 4 6 8 10 Average Forward Current - IF(AV)(A) 2 4 6 8 10 Average Forward Current - IF(AV)(A) Fig. 6 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 7 - Maximum Allowable Case Temperature vs. Average Forward Current (FULL-PAK) Average Power Loss ( Watts ) 20 18 RMS Limit 16 14 12 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 10 8 6 4 2 0 0 2 4 6 8 10 12 Average Forward Current - IF(AV) (A) Fig. 8 - Forward Power Loss Characteristics www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number: 93515 [email protected], [email protected], [email protected] Revision: 10-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETH0806-M3, VS-ETH0806FP-M3 Hyperfast Rectifier, 8 A FRED Pt® 360 3500 320 3000 Vishay Semiconductors If = 8A, 125°C 2500 240 If = 8A, 125°C 200 160 2000 Qrr ( nC ) trr ( ns ) 280 If = 8A, 25°C 1500 1000 If = 8A, 25°C 120 500 typical value typical value 80 0 100 1000 100 di F /dt (A/µs ) Fig. 9 - Typical Reverse Recovery vs. dIF/dt 1000 di F /dt (A/µs ) Fig. 10 - Typical Stored Charge vs. dIF/dt VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 11 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 12 - Reverse Recovery Waveform and Definitions Document Number: 93515 Revision: 10-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETH0806-M3, VS-ETH0806FP-M3 Hyperfast Rectifier, 8 A FRED Pt® Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- E T H 08 06 FP -M3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Circuit configuration: E = Single diode 3 - T = TO-220 4 - H = Hyperfast recovery time 5 - Current code: 08 = 8 A 6 - Voltage code: 06 = 600 V 7 - None = TO-220 FP = FULL-PAK 8 - Environmental digit: -M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-ETH0806-M3 50 1000 Antistatic plastic tube VS-ETH0806FP-M3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information www.vishay.com 6 2L TO-220AC www.vishay.com/doc?95259 2L TO-220 FULL-PAK www.vishay.com/doc?95260 2L TO-220AC www.vishay.com/doc?95391 2L TO-220 FULL-PAK www.vishay.com/doc?95392 For technical questions within your region, please contact one of the following: Document Number: 93515 [email protected], [email protected], [email protected] Revision: 10-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay High Power Products True 2 Pin TO-220 DIMENSIONS in millimeters and inches 0.002" 0.05 mm A A E ØP F B Q H1 D Term. 4 0.150" REF. 45° Ø 2.0 mm REF. L1 b1 L b c 60° 1 2 J1 e SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. A 4.32 4.57 0.170 0.180 b 0.71 0.91 0.028 0.036 b1 1.15 1.39 0.045 0.055 c 0.36 0.53 0.014 0.021 D 14.99 15.49 0.590 0.610 E 10.04 10.41 0.395 0.410 e 5.08 BSC 0.200 BSC F 1.22 1.37 0.048 0.054 H1 5.97 6.47 0.235 0.255 J1 2.54 2.79 0.100 0.110 L 13.47 13.97 0.530 0.550 (1) 3.31 3.81 0.130 0.150 ØP 3.79 3.88 0.149 0.153 Q 2.60 2.84 0.102 0.112 L1 Notes (1) Lead dimension and finish uncontrolled in L 1 • These dimensions are within allowable dimensions of JEDEC TO-220AB rev. J outline dated 3-24-87 • Controling dimension: Inch Document Number: 95259 Revision: 21-Jan-10 For technical questions concerning discrete products, contact: [email protected] For technical questions concerning module products, contact: [email protected] www.vishay.com 1 Outline Dimensions Vishay High Power Products True 2 Pin TO-220 FULL-PAK DIMENSIONS in millimeters and inches A ØQ F E Q1 H1 D Q2 θ L1 b1 L b C e J1 SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. A 4.53 4.93 0.178 0.194 b 0.71 0.91 0.028 0.036 b1 1.15 1.39 0.045 0.055 C 0.36 0.53 0.014 0.021 D 15.67 16.07 0.617 0.633 E 9.96 10.36 0.392 e 5.08 typical 0.408 0.200 typical F 2.34 2.74 0.092 0.107 H1 6.50 6.90 0.256 0.272 J1 2.56 2.96 0.101 0.117 L 12.78 13.18 0.503 0.519 0.104 L1 2.23 2.63 0.088 ØQ 2.98 3.38 0.117 0.133 Q1 3.10 3.50 0.122 0.138 Q2 14.80 15.20 0.583 0.598 θ 0° 5° 0° 5° Document Number: 95260 Revision: 22-Jan-10 For technical questions concerning discrete products, contact: [email protected] For technical questions concerning module products, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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