FW705 Ordering number : ENA1030 SANYO Semiconductors DATA SHEET FW705 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • Composite type with a P-channel MOSFET driving from a 2.5V supply voltage contained in a single package. High-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Symbol Conditions Ratings VDSS VGSS Unit --20 V ±10 V --6 A ID Drain Current (PW≤10μs) IDP Duty cycle≤1% --52 A Allowable Power Dissipation PD When mounted on ceramic substrate (1500mm2✕0.8mm) 1unit, PW≤10s 2.3 W Total Dissipation When mounted on ceramic substrate (1500mm2✕0.8mm), PW≤10s Channel Temperature PT Tch Storage Temperature Tstg 2.5 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Marking : W705 Symbol V(BR)DSS IDSS Conditions ID=--1mA, VGS=0V Ratings min typ Unit max --20 V VDS=--20V, VGS=0V --1 μA ±10 μA IGSS VGS(off) VGS= ±8V, VDS=0V VDS=--10V, ID=--1mA ⏐yfs⏐ RDS(on)1 VDS=--10V, ID=--6A ID=--6A, VGS=--4V 30 40 mΩ RDS(on)2 ID=--3A, VGS=--2.5V 42 59 mΩ --0.4 7.8 --1.4 13 V S Continued on next page. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21308PA TI IM TC-00001209 No. A1030-1/4 FW705 Continued from preceding page. Parameter Symbol Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD typ pF 245 pF ns 390 ns ns See specified Test Circuit. 110 See specified Test Circuit. 145 ns VDS=--10V, VGS=--4V, ID=--6A VDS=--10V, VGS=--4V, ID=--6A 18.4 nC 3.2 nC VDS=--10V, VGS=--4V, ID=--6A IS=--6A, VGS=0V 5.2 --0.82 nC --1.2 V Electrical Connection 8 7 6 5 1 2 3 4 0.3 4.4 6.0 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 4 0.2 1.5 1.8 MAX 0.43 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Top view 0.1 1.27 0.595 pF 260 See specified Test Circuit. 5 5.0 1720 19 unit : mm (typ) 7005-003 1 Unit max See specified Test Circuit. Package Dimensions 8 min VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz td(off) tf Fall Time Ratings Conditions SANYO : SOP8 Switching Time Test Circuit VIN VDD= --10V 0V --4V ID= --6A RL=1.67Ω VIN D VOUT PW=10μs D.C.≤1% G FW705 P.G 50Ω S No. A1030-2/4 FW705 VGS= --1.0V --2 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 70 --6A 60 ID= --3A 40 30 20 10 --2 --3 --4 --5 --6 --7 Gate-to-Source Voltage, VGS -- V --1.4 --1.6 --1.8 --2.0 IT09897 70 60 = VGS 50 = V, I D --2.5 --3A = --6A V, I D --4.0 V GS= 40 30 20 10 --40 --20 0 20 40 60 80 100 120 140 160 IT09900 IS -- VSD --10 7 5 VGS=0V 3 2 1.0 7 5 3 --1.0 7 5 3 2 --0.1 7 5 --25° C C 5° °C --2 75 = Ta 3 2 25°C °C 25 5 5°C Source Current, IS -- A 7 --0.5 --0.6 --0.7 3 2 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A --0.01 --0.3 5 7 --10 IT09901 3 td(off) 2 tf 100 7 tr 5 td(on) --1.0 --1.1 IT09902 f=1MHz Ciss 2 1000 7 5 Coss Crss 3 3 2 --0.9 3 Ciss, Coss, Crss -- pF 5 --0.8 Ciss, Coss, Crss -- VDS 5 VDD= --10V VGS= --4V 7 --0.4 Diode Forward Voltage, VSD -- V SW Time -- ID 1000 10 --0.01 --1.2 Ambient Temperature, Ta -- °C 10 0.1 --0.01 --1.0 80 IT09898 VDS= --10V 2 --0.8 RDS(on) -- Ta 0 --60 --8 ⏐yfs⏐ -- ID 3 --0.6 90 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 80 --1 --0.4 Gate-to-Source Voltage, VGS -- V Ta=25°C 90 0 --0 --0.2 IT09896 RDS(on) -- VGS 100 50 0 --1.0 Ta= 7 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --3 --1 0 Forward Transfer Admittance, ⏐yfs⏐ -- S --4 --25 °C --2 --5 25 °C --3 --6 Ta =7 5°C Drain Current, ID -- A --1.5V --1 Switching Time, SW Time -- ns VDS= --10V --7 --5.0 V --4 ID -- VGS --8 --2 .0V --4.0V --2.5 --8.0V --6.0V Drain Current, ID -- A --5 V ID -- VDS --6 2 100 2 3 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 5 7 --10 IT09903 0 --5 --10 --15 Drain-to-Source Voltage, VDS -- V --20 IT09904 No. A1030-3/4 FW705 VGS -- Qg --3.5 Drain Current, ID -- A --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 2 4 6 8 10 12 14 16 Total Gate Charge, Qg -- nC Allowable Power Dissipation, PD -- W 18 20 When mounted on ceramic substrate (1500mm2✕0.8mm), PW≤10s 2.5 2.4 2.3 2.0 1.6 To t 1.2 1u al Di ss ni t ip ati on 0.8 0.4 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C --10 7 5 3 2 140 160 IT13259 ≤10μs IDP= --52A 1m s 10 ms 10 0m s ID= --6A DC 10 op era --1.0 7 5 3 2 s tio Operation in this area is limited by RDS(on). --0.1 7 5 3 2 n( Ta =2 5° C) Ta=25°C Single pulse When mounted on ceramic substrate (1500mm2✕0.8mm) --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 IT13258 Drain-to-Source Voltage, VDS -- V IT09906 PD -- Ta 2.8 ASO --100 7 5 3 2 VDS= --10V ID= --6A Allowable Power Dissipation, PD (FET1) -- W Gate-to-Source Voltage, VGS -- V --4.0 PD(FET1) -- PD(FET2) 3.0 When mounted on ceramic substrate (1500mm2✕0.8mm), PW≤10s 2.5 2.3 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.3 2.5 Allowable Power Dissipation, PD (FET2) -- W 3.0 IT13325 Note on usage : Since the FW705 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of February, 2008. Specifications and information herein are subject to change without notice. PS No. A1030-4/4