LMV710-N, LMV711-N, LMV715-N www.ti.com SNOS519J – APRIL 2000 – REVISED MARCH 2013 LMV710-N/LMV711/LMV715 Low Power, RRIO Operational Amplifiers with High Output Current Drive and Shutdown Option Check for Samples: LMV710-N, LMV711-N, LMV715-N FEATURES DESCRIPTION • The LMV710-N/LMV711/LMV715 are BiCMOS operational amplifiers with a CMOS input stage. These devices have greater than RR input common mode voltage range, rail-to-rail output and high output current drive. They offer a bandwidth of 5 MHz and a slew rate of 5 V/µs. 1 2 • • • • • • • • • • • (For 5V Supply, Typical Unless Otherwise Noted) Low Offset Voltage 3 mV, Max Gain-Bandwidth Product 5 MHz, Typ Slew Rate 5 V/µs, Typ Space Saving Packages 5-Pin and 6-Pin SOT23 Turn on Time from Shutdown <10 µs Industrial Temperature Range −40°C to +85°C Supply current in Shutdown Mode 0.2 µA, typ Ensured 2.7V and 5V Performance Unity Gain Stable Rail-to-Rail Input and Output Capable of Driving 600Ω Load APPLICATIONS • • • • • • • Wireless Phones GSM/TDMA/CDMA Power Amp Control AGC, RF Power Detector Temperature Compensation Wireless LAN Bluetooth HomeRF On the LMV711/LMV715, a separate shutdown pin can be used to disable the device and reduces the supply current to 0.2 µA (typical). They also feature a turn on time of less than 10 µs. It is an ideal solution for power sensitive applications, such as cellular phone, pager, palm computer, etc. In addition, once the LMV715 is in shutdown the output will be “Tristated”. The LMV710-N is offered in the space saving 5-Pin SOT-23 Tiny package. The LMV711/LMV715 are offered in the space saving 6-Pin SOT-23 Tiny package. The LMV710-N/LMV711/LMV715 are designed to meet the demands of low power, low cost, and small size required by cellular phones and similar battery powered portable electronics. Typical Application Figure 1. High Side Current Sensing 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2000–2013, Texas Instruments Incorporated LMV710-N, LMV711-N, LMV715-N SNOS519J – APRIL 2000 – REVISED MARCH 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Absolute Maximum Ratings ESD Tolerance (1) (2) (3) Machine Model 100V Human Body Model 2000V Differential Input Voltage ± Supply Voltage (V+) + 0.4V (V−) − 0.4V Voltage at Input/Output Pin Supply Voltage (V+ - V −) 5.5V Output Short Circuit to V+ (4) − (5) Output Short Circuit to V Current at Input Pin ± 10 mA Mounting Temp. Infrared or Convection (20 sec) 235°C −65°C to 150°C Storage Temperature Range Junction Temperature (TJMAX) 150°C (6) (1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test conditions, see the Electrical Characteristics. If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications. Human body model, 1.5 kΩ in series with 100 pF. Machine model, 0Ω in series with 100 pF. Shorting circuit output to V+ will adversely affect reliability. Shorting circuit output to V− will adversely affect reliability. The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) - T A)/θJA. All numbers apply for packages soldered directly into a PC board. (2) (3) (4) (5) (6) Operating Ratings (1) Supply Voltage 2.7V to 5.0V −40°C to 85°C Temperature Range Thermal Resistance (θJA) DBV0005A package, 5-Pin SOT-23 265 °C/W DBV0006A package, 6-Pin SOT-23 (1) 265 °C/W Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test conditions, see the Electrical Characteristics. 2.7V Electrical Characteristics Unless otherwise specified, all limits ensured for TJ = 25°C. V+ = 2.7V, V − = 0V, VCM = 1.35V and RL > 1 MΩ. Boldface limits apply at the temperature extremes. Parameter VOS Input Offset Voltage IB Input Bias Current CMRR PSRR (1) (2) 2 Test Conditions Typ (1) Limits 3 3.2 (2) Units VCM = 0.85V and VCM = 1.85V 0.4 Common Mode Rejection Ratio 0 ≤ VCM ≤ 2.7V 75 50 45 dB min Power Supply Rejection Ratio 2.7V ≤ V+ ≤ 5V, VCM = 0.85V 110 70 68 dB min 2.7V ≤ V+ ≤ 5V, VCM = 1.85V 95 70 68 dB min 4 mV max pA Typical values represent the most likely parametric norm. All limits are specified by testing or statistical analysis. Submit Documentation Feedback Copyright © 2000–2013, Texas Instruments Incorporated Product Folder Links: LMV710-N LMV711-N LMV715-N LMV710-N, LMV711-N, LMV715-N www.ti.com SNOS519J – APRIL 2000 – REVISED MARCH 2013 2.7V Electrical Characteristics (continued) Unless otherwise specified, all limits ensured for TJ = 25°C. V+ = 2.7V, V − = 0V, VCM = 1.35V and RL > 1 MΩ. Boldface limits apply at the temperature extremes. Parameter VCM Test Conditions Input Common-Mode Voltage Range ISC Output Short Circuit Current VO Output Swing For CMRR ≥ 50 dB Typ (1) Limits (2) Units -0.3 -0.2 3 2.9 Sourcing VO = 0V 28 15 12 mA min Sinking VO = 2.7V 40 25 22 mA min 2.68 2.62 2.60 V min 0.01 0.12 0.15 V max 2.55 2.52 2.50 V min 0.05 0.23 0.30 V max 200 mV RL = 10 kΩ to 1.35V RL = 600Ω to 1.35V V VO (SD) Output Voltage Level in Shutdown Mode (LMV711 only) 50 IO (SD) Output Leakage Current in Shutdown Mode (LMV715 Only) 1 pA CO (SD) Output Capacitance in Shutdown Mode (LMV715 Only) 32 pF IS Supply Current AV Large Signal Voltage On Mode 1.22 1.7 1.9 mA max Shutdown Mode, VSD = 0V 0.002 10 µA Sourcing RL = 10 kΩ VO = 1.35V to 2.3V 115 80 76 dB min Sinking RL = 10 kΩ VO = 0.4V to 1.35V 113 80 76 dB min Sourcing RL = 600Ω VO = 1.35V to 2.2V 110 80 76 dB min Sinking RL = 600Ω VO = 0.5V to 1.35V 100 80 76 dB min (3) SR Slew Rate 5 V/µs GBWP Gain-Bandwidth Product 5 MHz φm Phase Margin 60 Deg TON Turn-on Time from Shutdown VSD Shutdown Pin Voltage Range <10 On Mode Shutdown Mode en (3) Input-Referred Voltage Noise f = 1 kHz µs 1.5 to 2.7 2.4 to 2.7 V 0 to 1 0 to 0.8 V 20 nV/√Hz Number specified is the slower of the positive and negative slew rates. Copyright © 2000–2013, Texas Instruments Incorporated Product Folder Links: LMV710-N LMV711-N LMV715-N Submit Documentation Feedback 3 LMV710-N, LMV711-N, LMV715-N SNOS519J – APRIL 2000 – REVISED MARCH 2013 www.ti.com 3.2V Electrical Characteristics Unless otherwise specified, all limits ensured for TJ = 25°C. V+ = 3.2V, V− = 0V, VCM = 1.6V. Boldface limits apply at the temperature extremes. Parameter VO (1) (2) Test Conditions Output Swing Typ IO = 6.5 mA (1) Limit (2) Units 3.0 2.95 2.92 V min 0.01 0.18 0.25 V max Typical values represent the most likely parametric norm. All limits are specified by testing or statistical analysis. 5V Electrical Characteristics Unless otherwise specified, all limits ensured for TJ = 25°C. V+ = 5V, V − = 0V, VCM = 2.5V, and RL > 1 MΩ. Boldface limits apply at the temperature extremes. Parameter VOS Input Offset Voltage IB Input Bias Current CMRR PSRR VCM Test Conditions Limits 3 3.2 (2) Units 0.4 Common Mode Rejection Ratio 0V ≤ VCM ≤ 5V 70 50 48 dB min Power Supply Rejection Ratio 2.7V ≤ V+ ≤ 5V, VCM = 0.85V 110 70 68 dB min 2.7V ≤ V+ ≤ 5V, VCM = 1.85V 95 70 68 dB min -0.3 −0.2 5.3 5.2 Sourcing VO = 0V 35 25 21 mA min Sinking VO = 5V 40 25 21 mA min 4.98 4.92 4.90 V min 0.01 0.12 0.15 V max 4.85 4.82 4.80 V min 0.05 0.23 0.3 V max 200 mV 4 Output Short Circuit Current VO (1) VCM = 0.85V and VCM = 1.85V Input Common-Mode Voltage Range ISC Typ Output Swing For CMRR ≥ 50 dB RL = 10 kΩ to 2.5V RL = 600Ω to 2.5V mV max pA V VO (SD) Output Voltage Level in Shutdown Mode (LMV711 only) 50 IO (SD) Output Leakage Current in Shutdown Mode (LMV715 Only) 1 pA CO (SD) Output Capacitance in shutdown Mode (LMV715 Only) 32 pF IS Supply Current (1) (2) 4 On Mode 1.17 1.7 1.9 mA max Shutdown Mode 0.2 10 µA Typical values represent the most likely parametric norm. All limits are specified by testing or statistical analysis. Submit Documentation Feedback Copyright © 2000–2013, Texas Instruments Incorporated Product Folder Links: LMV710-N LMV711-N LMV715-N LMV710-N, LMV711-N, LMV715-N www.ti.com SNOS519J – APRIL 2000 – REVISED MARCH 2013 5V Electrical Characteristics (continued) Unless otherwise specified, all limits ensured for TJ = 25°C. V+ = 5V, V − = 0V, VCM = 2.5V, and RL > 1 MΩ. Boldface limits apply at the temperature extremes. Parameter AV Test Conditions Large Signal Voltage Gain Slew Rate GBWP φm TON Turn-on Time from Shutdown VSD Shutdown Pin Voltage Range (3) Limits (2) Units 123 80 76 dB min Sinking RL = 10 kΩ VO = 0.4V to 2.5V 120 80 76 dB min Sourcing RL = 600Ω VO = 2.5V to 4.5V 110 80 76 dB min Sinking RL = 600Ω VO = 0.5V to 2.5V 118 80 76 dB min 5 V/µs Gain-Bandwidth Product 5 MHz Phase Margin 60 Deg <10 µs On Mode Shutdown Mode en (1) Sourcing RL = 10 kΩ VO = 2.5V to 4.6V (3) SR Typ Input-Referred Voltage Noise f = 1 kHz 2 to 5 2.4 to 5 0 to 1.5 0 to 0.8 20 V nV/√Hz Number specified is the slower of the positive and negative slew rates. Copyright © 2000–2013, Texas Instruments Incorporated Product Folder Links: LMV710-N LMV711-N LMV715-N Submit Documentation Feedback 5 LMV710-N, LMV711-N, LMV715-N SNOS519J – APRIL 2000 – REVISED MARCH 2013 www.ti.com Typical Performance Characteristics Unless otherwise specified, VS = +5V, single supply, TA = 25°C. 6 Supply Current vs. Supply Voltage (On Mode) LMV711/LMV715 Supply Current vs. Supply Voltage (Shutdown Mode) Figure 2. Figure 3. Output Positive Swing vs. Supply Voltage Output Negative Swing vs. Supply Voltage Figure 4. Figure 5. Output Positive Swing vs. Supply Voltage Output Negative Swing vs. Supply Voltage Figure 6. Figure 7. Submit Documentation Feedback Copyright © 2000–2013, Texas Instruments Incorporated Product Folder Links: LMV710-N LMV711-N LMV715-N LMV710-N, LMV711-N, LMV715-N www.ti.com SNOS519J – APRIL 2000 – REVISED MARCH 2013 Typical Performance Characteristics (continued) Unless otherwise specified, VS = +5V, single supply, TA = 25°C. Output Positive Swing vs. Supply Voltage Output Negative Swing vs. Supply Voltage Figure 8. Figure 9. Input Voltage Noise vs. Frequency PSRR vs. Frequency Figure 10. Figure 11. CMRR vs. Frequency LMV711/LMV715 Turn On Characteristics Figure 12. Figure 13. Copyright © 2000–2013, Texas Instruments Incorporated Product Folder Links: LMV710-N LMV711-N LMV715-N Submit Documentation Feedback 7 LMV710-N, LMV711-N, LMV715-N SNOS519J – APRIL 2000 – REVISED MARCH 2013 www.ti.com Typical Performance Characteristics (continued) Unless otherwise specified, VS = +5V, single supply, TA = 25°C. 8 Sourcing Current vs. Output Voltage Sinking Current vs. Output Voltage Figure 14. Figure 15. THD+N vs. Frequency (VS = 5V) THD+N vs. Frequency (VS = 2.7V) Figure 16. Figure 17. THD+N vs. VOUT THD+N vs. VOUT Figure 18. Figure 19. Submit Documentation Feedback Copyright © 2000–2013, Texas Instruments Incorporated Product Folder Links: LMV710-N LMV711-N LMV715-N LMV710-N, LMV711-N, LMV715-N www.ti.com SNOS519J – APRIL 2000 – REVISED MARCH 2013 Typical Performance Characteristics (continued) Unless otherwise specified, VS = +5V, single supply, TA = 25°C. CCM vs. VCM CCM vs. VCM Figure 20. Figure 21. CDIFF vs. VCM (VS = 2.7V) CDIFF vs. VCM (VS = 5V) Figure 22. Figure 23. Open Loop Frequency Response Open Loop Frequency Response Figure 24. Figure 25. Copyright © 2000–2013, Texas Instruments Incorporated Product Folder Links: LMV710-N LMV711-N LMV715-N Submit Documentation Feedback 9 LMV710-N, LMV711-N, LMV715-N SNOS519J – APRIL 2000 – REVISED MARCH 2013 www.ti.com Typical Performance Characteristics (continued) Unless otherwise specified, VS = +5V, single supply, TA = 25°C. 10 Open Loop Frequency Response Open Loop Frequency Response Figure 26. Figure 27. Open Loop Frequency Response Open Loop Frequency Response Figure 28. Figure 29. Non-Inverting Large Signal Pulse Response Non-Inverting Small Signal Pulse Response Figure 30. Figure 31. Submit Documentation Feedback Copyright © 2000–2013, Texas Instruments Incorporated Product Folder Links: LMV710-N LMV711-N LMV715-N LMV710-N, LMV711-N, LMV715-N www.ti.com SNOS519J – APRIL 2000 – REVISED MARCH 2013 Typical Performance Characteristics (continued) Unless otherwise specified, VS = +5V, single supply, TA = 25°C. Inverting Large Signal Pulse Response Inverting Small Signal Pulse Response Figure 32. Figure 33. VOS vs. VCM VOS vs. VCM Figure 34. Figure 35. Copyright © 2000–2013, Texas Instruments Incorporated Product Folder Links: LMV710-N LMV711-N LMV715-N Submit Documentation Feedback 11 LMV710-N, LMV711-N, LMV715-N SNOS519J – APRIL 2000 – REVISED MARCH 2013 www.ti.com APPLICATION INFORMATION Supply Bypassing The application circuits in this datasheet do not show the power supply connections and the associated bypass capacitors for simplification. When the circuits are built, it is always required to have bypass capacitors. Ceramic disc capacitors (0.1 µF) or solid tantalum (1 µF) with short leads, and located close to the IC are usually necessary to prevent interstage coupling through the power supply internal impedance. Inadequate bypassing will manifest itself by a low frequency oscillation or by high frequency instabilities. Sometimes, a 10 µF (or larger) capacitor is used to absorb low frequency variations and a smaller 0.1 µF disc is paralleled across it to prevent any high frequency feedback through the power supply lines. Shutdown Mode The LMV711/LMV715 have a shutdown pin. To conserve battery life in portable applications, they can be disabled when the shutdown pin voltage is pulled low. For LMV711 during shutdown mode, the output stays at about 50 mV from the lower rail, and the current drawn from the power supply is 0.2 µA (typical). This makes the LMV711 an ideal solution for power sensitive applications. For the LMV715 during shutdown mode, the output will be “Tri-stated”. The shutdown pin should never be left unconnected. In applications where shutdown operation is not needed and the LMV711 or LMV715 is used, the shutdown pin should be connected to V+. Leaving the shutdown pin floating will result in an undefined operation mode and the device may oscillate between shutdown and active modes. Rail-to-Rail Input The rail-to-rail input is achieved by using paralleled PMOS and NMOS differential input stages. (See Simplified Schematic in this datasheet). When the common mode input voltage changes from ground to the positive rail, the input stage goes through three modes. First, the NMOS pair is cutoff and the PMOS pair is active. At around 1.4V, both PMOS and NMOS pairs operate, and finally the PMOS pair is cutoff and NMOS pair is active. Since both input stages have their own offset voltage (VOS), the offset of the amplifier becomes a function of the common-mode input voltage. See curves for VOS vs. VCM in Typical Performance Characteristics section. As shown in the curve, the VOS has a crossover point at 1.4V above V−. Proper design must be done in both DC and AC coupled applications to avoid problems. For large input signals that include the VOS crossover point in their dynamic range, it will cause distortion in the output signal. One way to avoid such distortion is to keep the signal away from the crossover point. For example, in a unity gain buffer configuration and with VS = 5V, a 3V peak-to-peak signal center at 2.5V will contain input-crossover distortion. To avoid this, the input signal should be centered at 3.5V instead. Another way to avoid large signal distortion is to use a gain of −1 circuit which avoids any voltage excursions at the input terminals of the amplifier. See Figure 36. In this circuit, the common mode DC voltage (VCM) can be set at a level away from the VOS crossover point. Figure 36. When the input is a small signal and this small signal falls inside the VOS transition range, the gain, CMRR and some other parameters will be degraded. To resolve this problem, the small signal should be placed such that it avoids the VOS crossover point. To achieve maximum output swing, the output should be biased at mid-supply. This is normally done by biasing the input at mid-supply. But with supply voltage range from 2V to 3.4V, the input of the op amp should not be biased at mid-supply because of the transition of the VOS. Figure 37 shows an example of how to get away from the VOS crossover point and maintain a maximum swing with a 2.7V supply. Figure 38 shows the waveforms of VIN and VOUT. 12 Submit Documentation Feedback Copyright © 2000–2013, Texas Instruments Incorporated Product Folder Links: LMV710-N LMV711-N LMV715-N LMV710-N, LMV711-N, LMV715-N www.ti.com SNOS519J – APRIL 2000 – REVISED MARCH 2013 Figure 37. Figure 38. The inputs can be driven 300 mV beyond the supply rails without causing phase reversal at the output. However, the inputs should not be allowed to exceed the maximum ratings. Compensation of Input Capacitance In the application (Figure 39) where a large feedback resistor is used, the feedback resistor can react with the input capacitance of the op amp and introduce an additional pole to the close loop frequency response. Figure 39. Cancelling the Effect of Input Capacitance This pole occurs at frequency fp , where (1) Any stray capacitance due to external circuit board layout, any source capacitance from transducer or photodiode connected to the summing node will also be added to the input capacitance. If fp is less than or close to the unity-gain bandwidth (5 MHz) of the op amp, the phase margin of the loop is reduced and can cause the system to be unstable. To avoid this problem, make sure that fp occurs at least 2 octaves beyond the expected −3 dB frequency corner of the close loop frequency response. If not, a feedback capacitor CF can be placed in parallel with RF such that Copyright © 2000–2013, Texas Instruments Incorporated Product Folder Links: LMV710-N LMV711-N LMV715-N Submit Documentation Feedback 13 LMV710-N, LMV711-N, LMV715-N SNOS519J – APRIL 2000 – REVISED MARCH 2013 www.ti.com (2) The paralleled RF and CF introduce a zero, which cancels the effect from the pole. Capacitive Load Tolerance The LMV710-N/LMV711/ LMV715 can directly drive 200 pF in unity-gain without oscillation. The unity-gain follower is the most sensitive configuration to capacitive loading. Direct capacitive loading reduces the phase margin of amplifiers. The combination of the amplifier's output impedance and the capacitive load induces phase lag. This results in either an underdamped pulse response or oscillation. To drive a heavier capacitive load, circuit in Figure 40 can be used. Figure 40. Indirectly Driving A Capacitive Load using Resistive Isolation In Figure 40, the isolation resistor RISO and the load capacitor CL form a pole to increase stability by adding more phase margin to the overall system. The desired performance depends on the value of RISO. The bigger the RISO resistor value, the more stable VOUT will be. But the DC accuracy is not great when the RISO gets bigger. If there were a load resistor in Figure 40, the output would be voltage divided by RISO and the load resistor. The circuit in Figure 41 is an improvement to the one in Figure 40 because it provides DC accuracy as well as AC stability. In this circuit, RF provides the DC accuracy by using feed-forward techniques to connect VIN to RL. CF and RISO serve to counteract the loss of phase margin by feeding the high frequency component of the output signal back to the amplifier's inverting input, thereby preserving phase margin in the overall feedback loop. Increased capacitive drive is possible by increasing the value of CF . This in turn will slow down the pulse response. Figure 41. Indirectly Driving A Capacitive A Load with DC Accuracy Application Circuits Peak Detector Peak detectors are used in many applications, such as test equipment, measurement instrumentation, ultrasonic alarm systems, etc. Figure 42 shows the schematic diagram of a peak detector using LMV710-N or LMV711 or LMV715. This peak detector basically consists of a clipper, a parallel RC network, and a voltage follower. 14 Submit Documentation Feedback Copyright © 2000–2013, Texas Instruments Incorporated Product Folder Links: LMV710-N LMV711-N LMV715-N LMV710-N, LMV711-N, LMV715-N www.ti.com SNOS519J – APRIL 2000 – REVISED MARCH 2013 Figure 42. Peak Detector The capacitor C1 is first discharged by applying a positive pulse to the reset transistor. When a positive voltage VIN is applied to the input, the input voltage is higher than the voltage across C1. The output of the op amp goes high and forward biases the diode D1. The capacitor C1 is charged to VIN. When the input becomes less than the current capacitor voltage, the output of the op amp A1 goes low and the diode D1 is reverse biased. This isolates the C1 and leaves it with the charge equivalent to the peak of the input voltage. The follower prevents unintentional discharging of C1 by loading from the following circuit. R5 and C1 are properly selected so that the capacitor is charged rapidly to VIN. During the holding period, the capacitor slowly discharge through C1, via leakage of the capacitor and the reverse-biased diode, or op amp bias currents. In any cases the discharging time constant is much larger than the charge time constant. And the capacitor can hold its voltage long enough to minimize the output ripple. Resistors R2 and R3 limit the current into the inverting input of A1 and the non-inverting input of A2 when power is disconnected from the circuit. The discharging current from C1 during power off may damage the input circuitry of the op amps. The peak detector can be reset by applying a positive pulse to the reset transistor. The charge on the capacitor is dumped into ground, and the detector is ready for another cycle. The maximum input voltage to this detector should be less than (V+ - VD), where VD is the forward voltage drop of the diode. Otherwise, the input voltage should be scaled down before applying to the circuit. High Side Current Sensing The high side current sensing circuit (Figure 43) is commonly used in a battery charger to monitor charging current to prevent over-charging. A sense resistor RSENSE is connected to the battery directly. This system requires an op amp with rail-to-rail input. The LMV710-N/LMV711/LMV715 are ideal for this application because its common mode input range can go beyond the positive rail. Figure 43. High Side Current Sensing Copyright © 2000–2013, Texas Instruments Incorporated Product Folder Links: LMV710-N LMV711-N LMV715-N Submit Documentation Feedback 15 LMV710-N, LMV711-N, LMV715-N SNOS519J – APRIL 2000 – REVISED MARCH 2013 www.ti.com Figure 44. Typical of GSM P.A. Control Loop GSM Power Amplifier Control Loop There are four critical sections in the GSM Power Amplifier Control Loop. The class-C RF power amplifier provides amplification of the RF signal. A directional coupler couples small amount of RF energy from the output of the RF P. A. to an envelope detector diode. The detector diode senses the signal level and rectifies it to a DC level to indicate the signal strength at the antenna. An op amp is used as an error amplifier to process the diode voltage and ramping voltage. This loop control the power amplifier gain via the op amp and forces the detector diode voltage and ramping voltage to be equal. Power control is accomplished by changing the ramping voltage. The LMV710-N/LMV711/LMV715 are well suited as an error amplifier in this application. The LMV711/LMV715 have an extra shutdown pin to switch the op amp to shutdown mode. In shutdown mode, the LMV711/LMV715 consume very low current. The LMV711 provides a ground voltage to the power amplifier control pin VPC. Therefore, the power amplifier can be turned off to save battery life. The LMV715 output will be “tri-stated” when in shutdown. Simplified Schematic Figure 45. LMV711 16 Submit Documentation Feedback Copyright © 2000–2013, Texas Instruments Incorporated Product Folder Links: LMV710-N LMV711-N LMV715-N LMV710-N, LMV711-N, LMV715-N www.ti.com SNOS519J – APRIL 2000 – REVISED MARCH 2013 Connection Diagrams LMV710-N Top View Figure 46. 5-Pin SOT-23 Package See Package Number DBV0005A LMV711 and LMV715 Top View Figure 47. 6-Pin SOT-23 Package See Package Number DBV0006A Copyright © 2000–2013, Texas Instruments Incorporated Product Folder Links: LMV710-N LMV711-N LMV715-N Submit Documentation Feedback 17 LMV710-N, LMV711-N, LMV715-N SNOS519J – APRIL 2000 – REVISED MARCH 2013 www.ti.com REVISION HISTORY Changes from Revision I (March 2013) to Revision J • 18 Page Changed layout of National Data Sheet to TI format .......................................................................................................... 17 Submit Documentation Feedback Copyright © 2000–2013, Texas Instruments Incorporated Product Folder Links: LMV710-N LMV711-N LMV715-N PACKAGE OPTION ADDENDUM www.ti.com 1-Nov-2013 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) LMV710M5 NRND SOT-23 DBV 5 1000 TBD Call TI Call TI -40 to 85 A48A LMV710M5/NOPB ACTIVE SOT-23 DBV 5 1000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 A48A LMV710M5X NRND SOT-23 DBV 5 3000 TBD Call TI Call TI -40 to 85 A48A LMV710M5X/NOPB ACTIVE SOT-23 DBV 5 3000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 A48A (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. 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Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 26-Mar-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) LMV710M5 SOT-23 DBV 5 1000 178.0 8.4 LMV710M5/NOPB SOT-23 DBV 5 1000 178.0 LMV710M5X SOT-23 DBV 5 3000 178.0 LMV710M5X/NOPB SOT-23 DBV 5 3000 178.0 3.2 3.2 1.4 4.0 8.0 Q3 8.4 3.2 3.2 1.4 4.0 8.0 Q3 8.4 3.2 3.2 1.4 4.0 8.0 Q3 8.4 3.2 3.2 1.4 4.0 8.0 Q3 Pack Materials-Page 1 W Pin1 (mm) Quadrant PACKAGE MATERIALS INFORMATION www.ti.com 26-Mar-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LMV710M5 SOT-23 DBV 5 1000 210.0 185.0 35.0 LMV710M5/NOPB SOT-23 DBV 5 1000 210.0 185.0 35.0 LMV710M5X SOT-23 DBV 5 3000 210.0 185.0 35.0 LMV710M5X/NOPB SOT-23 DBV 5 3000 210.0 185.0 35.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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