NTMFS4H11NF Power MOSFET 25 V, 334 A, Single N−Channel, SO−8FL Features • • • • • Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • • • • • http://onsemi.com VGS MAX RDS(on) TYP QGTOT 4.5 V 1.0 mW 37.8 nC 10 V 0.7 mW 82 nC High Performance DC-DC Converters System Voltage Rails Netcom, Telecom Servers Point of Load PIN CONNECTIONS SO8−FL (5 x 6 mm) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Symbol Value Units Drain-to-Source Voltage Parameter VDSS 25 V Gate-to-Source Voltage VGS ±20 V Continuous Drain Current RqJA (Note 1) ID 54 A Power Dissipation RqJA (Note 1) PD 3.2 W Continuous Drain Current RqJC (Note 1) ID 334 A Power Dissipation RqJC (Note 1) PD 125 W Pulsed Drain Current (tp = 10 ms) IDM 568 A Single Pulse Drain-to-Source Avalanche Energy (Note 1) (IL = 57 Apk, L = 0.3 mH) EAS 487 mJ Drain to Source dV/dt Maximum Junction Temperature Storage Temperature Range Lead Temperature Soldering Reflow (SMD Styles Only), Pb-Free Versions (Note 2) (Top View) (Bottom View) N−CHANNEL MOSFET D (5, 6) S (1, 2, 3) G (4) dV/dt 7 V/ns TJ(max) 150 °C TSTG −55 to 150 °C TSLD °C 260 ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Values based on copper area of 645 mm2 (or 1 in2) of 2 oz copper thickness and FR4 PCB substrate. 2. For more information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 3. This is the absolute maximum rating. Parts are 100% UIS tested at TJ = 25°C, VGS = 10 V, IL = 37 A, EAS = 205 mJ. THERMALCHARACTERISTICS Parameter Thermal Resistance, Junction-to-Ambient (Note 1 and 4) Junction-to-Case (Note 1 and 4) Symbol Max RqJA RqJC 38.9 1.0 Units °C/W 4. Thermal Resistance RqJA and RqJC as defined in JESD51−3. © Semiconductor Components Industries, LLC, 2014 March, 2014 − Rev. 0 1 Publication Order Number: NTMFS4H11NF/D NTMFS4H11NF ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 25 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ ID = 10 mA reference to 25°C Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current IGSS VGS = 0 V, VDS = 20 V V 16 TJ = 25°C VDS = 0 V, VGS = +20 V mV/°C 500 mA +100 nA ON CHARACTERISTICS (Note 5) VGS(TH) VGS = VDS, ID = 250 mA VGS(TH)/TJ ID = 10 mA reference to 25°C Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance RDS(on) 1.2 2.1 3.7 VGS = 10 V ID = 30 A 0.56 0.7 VGS = 4.5 V ID = 30 A 0.79 1 gFS VDS = 12 V, ID = 20 A V mV/°C 101 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance 5538 VGS = 0 V, f = 1 MHz, VDS = 12 V CRSS 175.3 Total Gate Charge QG(TOT) 37.8 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Total Gate Charge Gate Resistance pF 3416 2.3 VGS = 4.5 V, VDS = 12 V; ID = 30 A nC 11.8 8 QG(TOT) VGS = 10 V, VDS = 12 V; ID = 30 A 82 RG TA = 25°C 1.3 nC 2 W SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 16.9 VGS = 4.5 V, VDD = 12 V, ID = 15 A, RG = 3.0 W tf 42.3 ns 46.3 30.9 SWITCHING CHARACTERISTICS, VGS = 10 V (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 10.9 VGS = 11.5 V, VDD = 12 V, ID = 15 A, RG = 3.0 W tf 33.2 ns 58.3 23.3 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.35 TJ = 125°C 0.27 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 2.0 A 0.6 V 66.7 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A QRR 33.1 ns 33.6 90 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTMFS4H11NF TYPICAL CHARACTERISTICS 200 180 VGS = 10 V to 3 V 140 ID, DRAIN CURRENT (A) VGS = 2.8 V 160 TJ = 25°C 120 100 VGS = 2.6 V 80 VGS = 2.4 V 60 40 VGS = 2.2 V 20 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 140 120 100 80 TJ = 125°C 60 TJ = 25°C 40 20 TJ = −55°C 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1.0 1.5 2.0 2.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 0.0018 3.0 1.0E−03 0.0016 ID = 30 A T = 25°C VGS = 4.5 V 8.0E−04 0.0014 0.0012 VGS = 10 V 6.0E−04 0.0010 0.0008 4.0E−04 0.0006 0.0004 2.0E−04 0.0002 0 3 4 5 6 7 8 9 10 1.5 30 40 50 60 70 80 90 100 110 120 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1E−01 VGS = 0 V ID = 30 A VGS = 10 V TJ = 150°C TJ = 125°C 1E−02 1.4 1.3 1.2 TJ = 85°C 1E−03 1.1 1.0 1E−04 0.9 0.8 0.7 −50 20 IDSS, LEAKAGE (A) 1.6 0E+00 VGS (V) 1.7 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) VDS = 5 V 160 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 180 TJ = 25°C 1E−05 −25 0 25 50 75 100 125 150 10 15 20 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 25 NTMFS4H11NF TYPICAL CHARACTERISTICS TJ = 25°C VGS = 0 V 8000 7000 Ciss 6000 5000 Coss 4000 3000 2000 1000 0 Crss 0 5 10 15 20 8 6 Qgs 4 Qgd TJ = 25°C VGS = 10 V VDD = 12.0 V ID = 30 A 2 0 0 10 20 30 40 50 60 70 Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 25 td(off) VGS = 0 V td(on) 100 90 80 Qg, TOTAL GATE CHARGE (nC) VDD = 12 V ID = 15 A VGS = 10 V t, TIME (ns) QT VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 tr tf 10 20 15 TJ = 125°C TJ = 25°C 10 5 0 1 1 10 0.2 100 0.3 0.4 0.5 0.6 0.7 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 ms 100 1 ms 10 10 ms 0 V < VGS < 10 V 1 RDS(on) Limit Thermal Limit Package Limit 0.1 0.01 0.01 0.1 1 dc 10 EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) RG, GATE RESISTANCE (W) 1000 ID, DRAIN CURRENT (A) 10 25 IS, SOURCE CURRENT (A) C, CAPACITANCE (pF) 9000 VGS, GATE−TO−SOURCE VOLTAGE (V) 10,000 100 220 200 ID = 37 A 180 160 140 120 100 80 60 40 20 0 25 50 75 100 125 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 150 NTMFS4H11NF TYPICAL CHARACTERISTICS 100 50% Duty Cycle 20% 10% 5% R(t) (°C/W) 10 2% 1% 1 PCB Cu Area 650 mm2 PCB Cu thk 1 oz 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 100 10 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics 1E+03 400 ID, DRAIN CURRENT (A) 350 GFS (S) 300 1E+02 250 200 150 1E+01 100 50 1E+00 0 0 20 40 60 80 100 120 140 160 1E−07 1E−06 1E−05 1E−04 1E−03 ID (A) PULSE WIDTH (sec) Figure 14. GFS vs. ID Figure 15. Avalanche Characteristics http://onsemi.com 5 1E−02 NTMFS4H11NF ORDERING INFORMATION Package Shipping† NTMFS4H11NFT1G SO8−FL (Pb-Free) 1500 / Tape & Reel NTMFS4H11NFT3G SO8−FL (Pb-Free) 5000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MARKING DIAGRAM D S S S G 1 SO−8 FLAT LEAD CASE 488AA STYLE 1 A Y W ZZ D 4H11NF AYWZZ D D = Assembly Location = Year = Work Week = Lot Traceability http://onsemi.com 6 NTMFS4H11NF PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE H 2X 0.20 C D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. A 2 B D1 2X 0.20 C 4X E1 q E 2 c 1 2 3 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q A1 4 TOP VIEW 0.10 C 3X C e SEATING PLANE DETAIL A A STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 0.10 C SIDE VIEW DETAIL A SOLDERING FOOTPRINT* 8X b 0.10 C A B 0.05 c 3X 4X 1.270 0.750 4X e/2 L 1 1.000 4 K 0.965 1.330 E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.905 2X 0.495 4.530 3.200 G MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.70 4.90 5.10 3.80 4.00 4.20 6.15 BSC 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.61 0.71 1.20 1.35 1.50 0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ −−− 12 _ 0.475 D2 BOTTOM VIEW 2X 1.530 4.560 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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