AMD AM29F100B-120DTC 1 megabit (128 k x 8-bit/64 k x 16-bit) cmos 5.0 volt-only, boot sector flash memory-die revision 1 Datasheet

SUPPLEMENT
Am29F100 Known Good Die
1 Megabit (128 K x 8-Bit/64 K x 16-Bit)
CMOS 5.0 Volt-only, Boot Sector Flash Memory—Die Revision 1
DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
— 5.0 V ± 10% for read, erase, and program
operations
— Simplifies system-level power requirements
■ High performance
— 120 ns maximum access time
■ Low power consumption
— 20 mA typical active read current for byte mode
— 28 mA typical active read current for word mode
— 30 mA typical program/erase current
— 25 µA typical standby current
■ Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
one 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
one 32 Kword sectors (word mode)
— Any combination of sectors can be erased
— Supports full chip erase
■ Top or bottom boot block configurations
available
■ Sector protection
— Hardware-based feature that disables/reenables program and erase operations in any
combination of sectors
■ Embedded Algorithms
— Embedded Erase algorithm automatically
pre-programs and erases the chip or any
combination of designated sector
— Embedded Program algorithm automatically
programs and verifies data at specified address
■ Minimum 100,000 program/erase cycles
guaranteed
■ Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash
— Superior inadvertent write protection
■ Data Polling and Toggle Bits
— Provides a software method of detecting
program or erase cycle completion
■ Ready/Busy pin (RY/BY#)
— Provides a hardware method for detecting
program or erase cycle completion
■ Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
■ Hardware RESET# pin
— Hardware method of resetting the device to
reading array data
— Sector protection/unprotection can be
implemented using standard PROM
programming equipment
■ Tested to datasheet specifications at
temperature
— Temporary Sector Unprotect feature allows insystem code changes in protected sectors
■ Quality and reliability levels equivalent to
standard packaged components
Publication# 21235 Rev: B Amendment/0
Issue Date: January 1998
S U P P L E M E N T
GENERAL DESCRIPTION
The Am29F100 in Known Good Die (KGD) form is a 1
Mbit, 5.0 Volt-only Flash memory. AMD defines KGD as
standard product in die form, tested for functionality
and speed. AMD KGD products have the same reliability and quality as AMD products in packaged form.
Am29F100 Features
The Am29F100 is a 1 Mbit, 5.0 Volt-only Flash memory
organized as 131,072 bytes or 65,536 words. Wordwide data appears on DQ0-DQ15; byte-wide data on
DQ0-DQ7. The device is designed to be programmed
in-system with the standard system 5.0 Volt VCC supply. A 12.0 volt VPP is not required for program or erase
operations. The device can also be programmed or
erased in standard EPROM programmers.
To eliminate bus contention the device has separate
chip enable (CE#), write enable (WE#) and output enable (OE#) controls.
The device requires only a single 5.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the
program and erase operations.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents
serve as input to an internal state machine that controls
the erase and programming circuitry. Write cycles also
internally latch addresses and data needed for the programming and erase operations. Reading data out of
the device is similar to reading from other Flash or
EPROM devices.
Device programming occurs by executing the program
command sequence. This invokes the Embedded
Program algorithm—an internal algorithm that automatically times the program pulse widths and verifies
proper cell margin.
Device erasure occurs by executing the erase command sequence. This invokes the Embedded Erase
algorithm—an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. During erase, the
2
device automatically times the erase pulse widths and
verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by observing the RY/BY#
pin, or by reading the DQ7 (Data# Polling) and DQ6
(toggle) status bits. After a program or erase cycle
has been completed, the device is ready to read array
data or accept another command.
The Erase Suspend feature enables the system to put
erase on hold for any period of time to read data from,
or program data to, a sector that is not being erased.
The sector erase architecture allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is erased
when shipped from the factory.
The hardware data protection measures include a
low VCC detector automatically inhibits write operations
during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of the sectors of memory,
and is implemented using standard EPROM programmers. The temporary sector unprotect feature allows
in-system changes to protected sectors.
The hardware RESET# pin terminates any operation
in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to the
system reset circuitry. A system reset would thus also
reset the device, enabling the system microprocessor
to read the boot-up firmware from the Flash memory.
The system can place the device into the standby mode.
Power consumption is greatly reduced in this mode.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
h i g h e st l e ve l s o f q u a l i ty, re l i a b il i ty, a n d c o s t
effectiveness. The device electrically erases all bits
within a sector simultaneously via Fowler-Nordheim
tunneling. The bytes are programmed one byte at a
time using the EPROM programming mechanism of
hot electron injection.
ELECTRICAL SPECIFICATIONS
Refer to the Am29F100 data sheet, document number
18926, for full electrical specifications on the
Am29F100.
Am29F100 Known Good Die
S U P P L E M E N T
PRODUCT SELECTOR GUIDE
Family Part Number
Am29F100 KGD
Speed Option (VCC = 5.0 V ± 10%)
-120
Max Access Time, tACC (ns)
120
Max CE# Access, tCE (ns)
120
Max OE# Access, tOE (ns)
50
DIE PHOTOGRAPH
Orientation relative
to leading edge of
tape and reel
Orientation relative
to top left corner of
Gel-Pak
DIE PAD LOCATIONS
11 10
9
8
7
6
5
4
3
2
1
47 46 45 44 43 42 41
40
39 38 37 36
35
12
13
34
AMD logo location
14
15 16 17 18 19 20 21 22 23
33
24
Am29F100 Known Good Die
25 26 27 28 29
30 31 32
3
S U P P L E M E N T
PAD DESCRIPTION
Pad
Signal
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
VCC
DQ4
DQ12
DQ5
DQ13
DQ6
DQ14
NC
DQ7
NC
NC
DQ15
VSS
BYTE#
A15
A14
A13
A12
A11
A10
A9
A8
WE#
RESET#
RY/BY#
A7
A6
A5
A4
A3
A2
A1
A0
CE#
VSS
OE#
NC
NC
NC
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
Pad Center (mils)
X
Y
0.0
0.0
–16.5
0.6
–27.0
0.6
–37.8
0.6
–48.4
0.6
–59.1
0.6
–69.7
0.6
–80.5
0.6
–91.0
0.6
–103
0.6
–109.6
0.6
–114.7
–20.6
–114.7
–29.5
–113.3
–37.0
–110.2
–121.9
–100.0
–121.9
–90.0
–121.9
–79.9
–121.9
–69.9
–121.9
–59.9
–121.9
–49.9
–121.9
–39.9
–121.9
–29.9
–121.9
47.8
–121.9
61.2
–121.9
71.1
–121.9
81.1
–121.9
91.0
–121.9
101.1
–121.9
114.5
–121.9
121.4
–121.9
131.4
–121.9
134.5
–41.1
134.5
–32.7
134.5
–17.6
130.7
0.6
120.9
0.6
114.2
0.6
107.5
0.6
91.6
0.6
80.2
0.6
69.4
0.6
58.9
0.6
48.1
0.6
37.5
0.6
26.7
0.6
16.2
0.6
Pad Center (millimeters)
X
Y
0.00
0.00
–0.42
0.02
–0.69
0.02
–0.96
0.02
–1.23
0.02
–1.50
0.02
–1.77
0.02
–2.04
0.02
–2.31
0.02
–2.62
0.02
–2.78
0.02
–2.91
–0.52
–2.91
–0.75
–2.88
–0.94
–2.80
–3.10
–2.54
–3.10
–2.29
–3.10
–2.03
–3.10
–1.78
–3.10
–1.52
–3.10
–1.27
–3.10
–1.01
–3.10
–0.76
–3.10
1.21
–3.10
1.55
–3.10
1.81
–3.10
2.06
–3.10
2.31
–3.10
2.57
–3.10
2.91
–3.10
3.08
–3.10
3.34
–3.10
3.42
–1.04
3.42
–0.83
3.42
–0.45
3.32
0.02
3.07
0.02
2.90
0.02
2.73
0.02
2.33
0.02
2.04
0.02
1.76
0.02
1.50
0.02
1.22
0.02
0.95
0.02
0.68
0.02
0.41
0.02
Note: The coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment.
4
Am29F100 Known Good Die
S U P P L E M E N T
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is
formed by a combination of the following:
Am29F100
T
-120
DP
C
1
DIE REVISION
This number refers to the specific AMD manufacturing
process and product technology reflected in this
document. It is entered in the revision field of AMD
standard product nomenclature.
TEMPERATURE RANGE
C = Commercial (0°C to +70°C)
I = Industrial (–40°C to +85°C)
E = Extended (–55°C to +125°C)
PACKAGE TYPE AND
MINIMUM ORDER QUANTITY
DP = Waffle Pack
180 die per 5 tray stack
DG =
Gel-Pak® Die Tray
420 die per 6 tray stack
DT =
Surftape™ (Tape and Reel)
1600 per 7-inch reel
DW =
Gel-Pak® Wafer Tray (sawn wafer on frame)
Call AMD sales office for minimum order
quantity
SPEED OPTION
See Valid Combinations
BOOT CODE SECTOR ARCHITECTURE
T = Top sector
B = Bottom sector
DEVICE NUMBER/DESCRIPTION
Am29F100 Known Good Die
1 Megabit (128 K x 8-Bit/64K x 16-Bit) CMOS Flash Memory—Die Revision 1
5.0 Volt-only Program and Erase
Valid Combinations
Am29F100T-120
Am29F100B-120
DPC 1, DPI 1, DPE 1,
DGC 1, DGI 1, DGE 1,
DTC 1, DTI 1, DTE 1,
DWC 1, DWI 1, DWE 1
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.
Am29F100 Known Good Die
5
S U P P L E M E N T
PRODUCT TEST FLOW
Figure 1 provides an overview of AMD’s Known Good
Die test flow. For more detailed information, refer to the
Am29F100 product qualification database supplement
for KGD. AMD implements quality assurance procedures throughout the product test flow. In addition, an
Wafer Sort 1
Bake
24 hours at 250°C
Wafer Sort 2
Wafer Sort 3
High Temperature
Packaging for Shipment
off-line quality monitoring program (QMP) further guarantees AMD quality standards are met on Known Good
Die products. These QA procedures also allow AMD to
produce KGD products without requiring or implementing burn-in.
DC Parameters
Functionality
Programmability
Erasability
Data Retention
DC Parameters
Functionality
Programmability
Erasability
DC Parameters
Functionality
Programmability
Erasability
Speed
Incoming Inspection
Wafer Saw
Die Separation
100% Visual Inspection
Die Pack
Shipment
Figure 1.
6
AMD KGD Product Test Flow
Am29F100 Known Good Die
S U P P L E M E N T
PHYSICAL SPECIFICATIONS
MANUFACTURING INFORMATION
Die dimensions . . . . . . . . . . . . . . 266 mils x 142 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . . 6.76 mm x 3.61 mm
Manufacturing and Test. . . . . . . . . Fab 14, Austin, TX
Die Thickness . . . . . . . . . . . . . ~20 mils or ~0.51 mm
Bond Pad Size . . . . . . . . . . . . . . 4.64 mils x 4.64 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . 117.8 µm x 117.8 µm
Pad Area Free of Passivation . . . . . . . . . .21.53 mils2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13,877 µm2
Manufacturing ID (Top Boot) . . . . . . . . . . . . 98242AK
(Bottom Boot) . . . . . . . .98242ABK
Preparation for Shipment . . . . . . . . Penang, Malaysia
Fabrication Process . . . . . . . . . . . . . . . . . CS19AFDS
Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .47
Bond Pad Metalization . . . . . . . . . . . . . . . . . . Al/Si/Cu
Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal,
may be grounded (optional)
Passivation. . . . . . . . . . . . . . . . . . Nitride/SOG/Nitride
DC OPERATING CONDITIONS
VCC (Supply Voltage) . . . . . . . . . . . . . . . 4.5 V to 5.5 V
SPECIAL HANDLING INSTRUCTIONS
Processing
Do not expose KGD products to ultraviolet light or
process them at temperatures greater than 250°C.
Failure to adhere to these handling instructions will
result in irreparable damage to the devices. For best
yield, AMD recommends assembly in a Class 10K
clean room with 30% to 60% relative humidity.
Junction Temperature Under Bias . .TJ (max) = 130°C
Storage
Operating Temperature
. . . . . . . . . . . . . . . . . . . . . . Commercial 0°C to +70°C
Industrial . . . . . . . . . . . . . . . . . . . –40°C to +85°C
Extended . . . . . . . . . . . . . . . . . . –55°C to +125°C
Store at a maximum temperature of 30°C in a nitrogenpurged cabinet or vacuum-sealed bag. Observe all
standard ESD handling procedures.
Am29F100 Known Good Die
7
S U P P L E M E N T
TERMS AND CONDITIONS OF SALE FOR
AMD NON-VOLATILE MEMORY DIE
All transactions relating to AMD Products under this
agreement shall be subject to AMD’s standard terms
and conditions of sale, or any revisions thereof, which
revisions AMD reserves the right to make at any time
and from time to time. In the event of conflict between
the provisions of AMD’s standard terms and conditions
of sale and this agreement, the terms of this agreement
shall be controlling.
AMD warrants articles of its manufacture against
defective materials or workmanship for a period of
ninety (90) days from date of shipment. This warranty
does not extend beyond AMD’s customer, and does
not extend to die which has been affixed onto a board
or substrate of any kind. The liability of AMD under this
warranty is limited, at AMD’s option, solely to repair or
to replacement with equivalent articles, or to make an
appropriate credit adjustment not to exceed the original
sales price, for articles returned to AMD, provided that:
(a) The Buyer promptly notifies AMD in writing of each
and every defect or nonconformity in any article for
which Buyer wishes to make a warranty claim against
AMD; (b) Buyer obtains authorization from AMD to
return the article; (c) the article is returned to AMD,
transportation charges paid by AMD, F.O.B. AMD’s factory; and (d) AMD’s examination of such article discloses to its satisfaction that such alleged defect or
nonconformity actually exists and was not caused by
negligence, misuse, improper installation, accident or
unauthorized repair or alteration by an entity other than
AMD. The aforementioned provisions do not extend
the original warranty period of any article which has
either been repaired or replaced by AMD.
THIS WARRANTY IS EXPRESSED IN LIEU OF ALL
OTHER WARRANTIES, EXPRESSED OR IMPLIED,
INCLUDING THE IMPLIED WARRANTY OF FITNESS
FOR A PARTICULAR PURPOSE, THE IMPLIED
WARRANTY OF MERCHANTABILITY AND OF ALL
OTHER OBLIGATIONS OR LIABILITIES ON AMD’S
PART, AND IT NEITHER ASSUMES NOR AUTHORIZES ANY OTHER PERSON TO ASSUME FOR
AMD ANY OTHER LIABILITIES. THE FOREGOING
CONSTITUTES THE BUYERS SOLE AND EXCLUSIVE REMEDY FOR THE FURNISHING OF DEFECTIVE OR NON CONFORMING ARTICLES AND AMD
SH ALL NOT IN AN Y EVENT BE LIABLE FOR
DAMAGES BY REASON OF FAILURE OF ANY
PRODUCT TO FUNCTION PROPERLY OR FOR ANY
SPECIAL, INDIRECT, CONSEQUENTIAL, INCIDENTAL OR EXEMPLARY DAMAGES, INCLUDING
BUT NOT LIMITED TO, LOSS OF PROFITS, LOSS
OF USE OR COST OF LABOR BY REASON OF THE
FACT THAT SUCH ARTICLES SHALL HAVE BEEN
DEFECTIVE OR NON CONFORMING.
Buyer agrees that it will make no warranty representations to its customers which exceed those given by
AMD to Buyer unless and until Buyer shall agree to
indemnify AMD in writing for any claims which exceed
AMD’s warranty. Buyer assumes all responsibility for
successful die prep, die attach and wire bonding processes. Due to the unprotected nature of the AMD
Products which are the subject hereof, AMD assumes
no responsibility for environmental effects on die.
AMD products are not designed or authorized for use
as components in life support appliances, devices or
systems where malfunction of a product can reasonably be expected to result in a personal injury. Buyer’s
use of AMD products for use in life support applications
is at Buyer’s own risk and Buyer agrees to fully indemnify AMD for any damages resulting in such use or
sale.
REVISION SUMMARY FOR AM29F100
KNOWN GOOD DIE
Formatted to match current template. Updated Distinctive Characteristics and General Description sections
using the current main data sheet. Changed Surftape
quantity to 1600.
Trademarks
Copyright © 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
8
Am29F100 Known Good Die
Similar pages