CREE CPW3-0600S004 Silicon carbide schottky diode chip Datasheet

CPW3-0600S004–Silicon Carbide Schottky Diode Chip
Z-Rec Rectifier
TM
VRRM
= 600 V
IF(AVG) = 4 A
Features
•
•
•
•
•
•
•
Qc
Chip Outline
= 8.5 nC
600-Volt Schottky Rectifier
Zero Reverse Recovery
Zero Forward Recovery
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Swtitching
Positive Temperature Coefficient on VF
Part Number
Anode
Cathode
Package
Marking
CPW3-0600S004B
Al
NiV/Ag
Sawn on Foil
Wafer # on Foil
Maximum Ratings
Rev. A
W3-0600S004
Datasheet: CP
Symbol
Parameter
Value Unit
Test Conditions
Note
VRRM
Repetitive Peak Reverse Voltage
600
V
VRSM
Surge Peak Reverse Voltage
600
V
VDC
DC Blocking Voltage
600
V
4
A
TJ=175˚C
22
A
TC=25˚C, tP=10 ms, Half Sine Wave, D=0.3
1
TC=25˚C, tP=10 µs, Pulse
1
IF(AVG)
Average Forward Current
IFRM
Repetitive Peak Forward Surge Current
IFSM
Non-Repetitive Peak Forward Surge Current
110
A
TJ , Tstg
Operating Junction and Storage Temperature
-55 to
+175
˚C
Subject to change without notice.
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1
Electrical Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
VF
Forward Voltage
1.5
1.8
1.8
2.4
V
IF = 4 A TJ=25°C
IF = 4 A TJ=175°C
IR
Reverse Current
10
20
50
100
μA
VR = 600 V TJ=25°C
VR = 600 V TJ=175°C
QC
Total Capacitive Charge
8.5
nC
VR = 600 V, IF = 4 A
di/dt = 500 A/μs
TJ = 25°C
C
Total Capacitance
251
22
21
pF
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
Note:
1. Assumes θJC Thermal Resistance of 2.02˚C/W or less
Mechanical Parameters
Parameter
Typ.
Unit
Die Size
1.13 x 1.13
mm
Anode Pad Size
0.98 x 0.99
mm
Anode Pad Opening
0.87 x 0.88
mm
Thickness
377 ± 10%
μm
Wafer Size
100
mm
4
μm
1.8
μm
Anode Metalization (Al)
Cathode Metalization (NiV/Ag)
Frontside Passivation
2
CPW3-0600S004 Rev. A
Polyimide
Note
Chip Dimensions
A
symbol
B
A
dimension
mm
inch
A
1.13
0.044
B
0.98
0.039
C
0.99
0.039
C
B
Part Number
Anode
Cathode
Package
Marking
CPW3-0600S004B
Al
NiV/Ag
Sawn on Foil
Wafer # on Foil
The die-on-tape method of delivering these SiC die may be considered a means of temporary storage only. Due
to an increase in adhesion over time, die stored for an extended period may affix too strongly to the tape. These
die should be stored in a temperature-controlled nitrogen dry box soon after receipt. Cree will further recommend
that all die be removed from tape to a waffle pack, to a similar storage medium, or used in production within 2
– 3 weeks of delivery to assure 100% release of all die without issues.
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems.
Copyright © 2009-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks and Z-Rec is a trademark of Cree, Inc.
3
CPW3-0600S004 Rev. A
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
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