DMN2022UNS DUAL N-CHANNEL ENHANCEMENT MODE MOSFET ® POWERDI Product Summary RDS(ON) max ID max TA = +25°C Low On-Resistance Low Input Capacitance 10.8m @ VGS = 4.5V 10.7A 14.5m @ VGS = 2.5V 9.3A 17.0m @ VGS = 1.8V 8.6A Fast Switching Speed Low Input/Output Leakage Complementary Pair MOSFET ESD Protected Up to 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) V(BR)DSS Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Power Management Functions Load Switch Mechanical Data Case: POWERDI®3333-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.0065 grams (Approximate) POWERDI®3333-8 D2 D1 Pin 1 S1 G1 S2 G2 G2 G1 ESD PROTECTED D1 D1 D2 D2 Top View Gate Protection Diode Gate Protection Diode S1 S2 Internal Schematic Bottom View Ordering Information (Note 4) Part Number DMN2022UNS-7 DMN2022UNS-13 Notes: Case POWERDI®3333-8 POWERDI®3333-8 Packaging 2000/Tape & Reel 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information YYWW NEW PRODUCT 20V Features S23 S23 = Product Type Marking Code YYWW = Date Code Marking YY = Last Digit of Year (ex: 15 = 2015) WW = Week Code (01 to 53) POWERDI is a registered trademark of Diodes Incorporated. DMN2022UNS Document number: DS38050 Rev. 2 - 2 1 of 7 www.diodes.com November 2015 © Diodes Incorporated DMN2022UNS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V TA = +25°C TA = +70°C TA = +25°C TA = +70°C Steady State NEW PRODUCT t<10s Value 20 ±10 10.7 8.6 ID A 13.9 11.1 2 60 ID Maximum Body Diode Forward Current (Note 6) Pulsed Drain Current (10s pulse, Duty cycle = 1%) Avalanche Current (Note 7) L = 0.1mH Avalanche Energy (Note 7) L = 0.1mH Units V V IS IDM IAS EAS A A A A mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol PD Total Power Dissipation (Note 5) Steady State t<10s Thermal Resistance, Junction to Ambient (Note 5) Value 1.2 107 64 1.9 67 40 -55 to +150 RJA Total Power Dissipation (Note 6) PD Steady State t<10s Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range RJA TJ, TSTG Units W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 — — — — — — 1 ±10 V µA µA VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±10V, VDS = 0V VGS(TH) RDS(ON) — 9.0 9.2 9.8 10.5 13.9 0.7 1 10.8 11.2 13.0 14.5 17.0 1.1 V Static Drain-Source On-Resistance 0.4 — — — — — — mΩ VDS = VGS, ID = 250μA VGS = 4.5V, ID = 4A VGS = 4.0V, ID = 4A VGS = 3.1V, ID = 4A VGS = 2.5V, ID = 4A VGS = 1.8V, ID = 4A VGS = 0V, IS = 5A — — — — — — — — — — — — — 1870 320 160 96 20.3 2.8 3.6 62 101 596 224 150 135 — — — — — — — — — — — — — pF pF pF Ω nC nC nC ns ns ns ns ns nC Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: VSD Ciss Coss Crss Rg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR V Test Condition VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 10V, ID = 6.5A VGS = 4.5V, VDS = 10V, RG = 6Ω, RL = 1.0Ω IF = 4A, di/dt = 100A/μs IF = 4A, di/dt = 100A/μs 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 8 .Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. POWERDI is a registered trademark of Diodes Incorporated. DMN2022UNS Document number: DS38050 Rev. 2 - 2 2 of 7 www.diodes.com November 2015 © Diodes Incorporated DMN2022UNS 25.0 16 VGS = 4.0V VGS = 3.7V 20.0 VGS=3.1V VGS = 1.5V 15.0 VGS=2.5V VGS=2.0V 10.0 VDS = 5V 18 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 20 VGS = 10.0V VGS = 4.5V VGS=1.8V 5.0 VGS = 1.2V 14 12 10 8 125℃ 6 85℃ 4 150℃ 2 VGS = 1.0V 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) -55℃ 0 3 0.025 VGS = 1.8V 0.015 VGS = 2.5V VGS = 3.1V 0.01 VGS = 4.0V VGS = 4.5V 0.005 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) RDS(ON), DRAIN-SOURCE On-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) Figure 1. Typical Output Characteristic 0.02 0.03 0.02 ID = 4.0A 0.01 0 0 125℃ 85℃ 0.01 25℃ -55℃ 0.005 0 2 4 6 8 VGS, GATE-SOURCE VOLTAGE (V) 10 Figure 4. Typical Transfer Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0.015 150℃ 2.5 0.04 30 0.02 0.5 1 1.5 2 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 0.05 Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 4.5V 25℃ 0 0.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT 30.0 0 5 10 15 20 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Junction Temperature 2.5 2 VGS = 3.1V, ID = 4A 1.5 1 VGS = 4.5V, ID = 4A 0.5 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Junction Temperature POWERDI is a registered trademark of Diodes Incorporated. DMN2022UNS Document number: DS38050 Rev. 2 - 2 3 of 7 www.diodes.com November 2015 © Diodes Incorporated VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.03 0.025 0.02 VGS = 3.1V, ID = 4A 0.015 0.01 VGS = 4.5V, ID = 4A 0.005 0 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (℃) 1.2 1 ID = 1mA 0.8 0.6 ID = 250μA 0.4 0.2 0 -50 150 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (℃) 150 Figure 8. Gate Threshold Variation vs. Junction Temperature Figure 7. On-Resistance Variation with Junction Temperature 10 20 8 15 VGS (V) IS, SOURCE CURRENT (A) VGS = 0V 10 4 TJ = 85oC TJ = 6 VDS = 10V, ID = 6.5A 125oC TJ = 25oC 5 2 TJ = 150oC TJ = -55oC 0 0 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 1.5 0 5 10 15 20 25 30 Qg (nC) 35 40 45 50 Figure 10. Gate Charge 100 PW =100µs RDS(ON) Limited PW =1ms ID, DRAIN CURRENT (A) NEW PRODUCT DMN2022UNS PW =10ms 10 PW =100ms PW =1s PW =10s 1 0.1 TJ(Max) = 150℃ TC = 25℃ Single Pulse DUT on 1*MRP Board VGS= 10V DC 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11. SOA, Safe Operation Area 100 POWERDI is a registered trademark of Diodes Incorporated. DMN2022UNS Document number: DS38050 Rev. 2 - 2 4 of 7 www.diodes.com November 2015 © Diodes Incorporated DMN2022UNS 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT D=0.7 D=0.5 D=0.3 D=0.9 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 RθJA(t) = r(t) * RθJA RθJA = 114℃/W Duty Cycle, D = t1 / t2 D=0.005 D=Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) 10 100 1000 Figure 12. Transient Thermal Resistance POWERDI is a registered trademark of Diodes Incorporated. DMN2022UNS Document number: DS38050 Rev. 2 - 2 5 of 7 www.diodes.com November 2015 © Diodes Incorporated DMN2022UNS Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. POWERDI®3333-8 (Type UXB) A D D1 A1 a NEW PRODUCT E1 E c L D2 E2 POWERDI®3333-8 (Type UXB) Dim Min Max Typ A 0.75 0.85 0.80 A1 0.00 0.05 -b 0.25 0.40 0.32 c 0.10 0.25 0.15 D 3.20 3.40 3.30 D1 2.95 3.15 3.05 D2 0.10 0.35 0.23 E 3.20 3.40 3.30 E1 2.95 3.15 3.05 E2 0.10 0.30 0.20 e 0.65 L 0.35 0.55 0.45 a 0° 12° 10° All Dimensions in mm L b e Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. POWERDI®3333-8 (Type UXB) X1 Dimensions Value (in mm) C 0.650 X 0.420 X1 2.370 Y 0.730 Y1 3.500 Y Y1 Y C X POWERDI is a registered trademark of Diodes Incorporated. DMN2022UNS Document number: DS38050 Rev. 2 - 2 6 of 7 www.diodes.com November 2015 © Diodes Incorporated DMN2022UNS IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). NEW PRODUCT Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2015, Diodes Incorporated www.diodes.com POWERDI is a registered trademark of Diodes Incorporated. DMN2022UNS Document number: DS38050 Rev. 2 - 2 7 of 7 www.diodes.com November 2015 © Diodes Incorporated