Bulletin I27131 rev. G 10/02 IRK.41, .56 SERIES ADD-A-pakTM GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features Benefits High Voltage Industrial Standard Package Thick Al metal die and double stick bonding Thick copper baseplate UL E78996 approved 3500VRMS isolating voltage Up to 1600V Full compatible TO-240AA High Surge capability Easy Mounting on heatsink Al203 DBC insulator Heatsink grounded 45 A 60 A Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu baseplate allow an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improve thermal spread. The Generation V of AAP module is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. The electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other IR modules. Electrical Description These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger. Major Ratings and Characteristics Parameters IRK.41 IRK.56 Units 45 60 A IO(RMS) (*) 100 135 A ITSM @ 50Hz 850 1310 A IFSM @ 60Hz 890 1370 A I 2t @ 50Hz 3.61 8.50 KA 2s @ 60Hz 3.30 7.82 KA 2s 36.1 85.0 KA 2√s IT(AV) or I F(AV) @ 85°C I2√t VRRM range 400 to 1600 V TSTG - 40 to 125 o TJ - 40 to125 o C C (*) As AC switch. www.irf.com 1 IRK.41, .56 Series Bulletin I27131 rev. G 10/02 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage Code - IRK.41/ .56 VRRM , maximum VRSM , maximum VDRM , max. repetitive repetitive non-repetitive peak off-state voltage, peak reverse voltage peak reverse voltage gate open circuit V V V 04 400 500 400 06 600 700 600 08 800 900 800 10 1000 1100 1000 12 1200 1300 1200 14 1400 1500 1400 16 1600 1700 1600 IRRM IDRM 125°C mA 15 On-state Conduction Parameters IT(AV) IRK.41 IRK.56 Units Conditions Max. average on-state current (Thyristors) 45 60 180o conduction, half sine wave, Maximum average 45 60 TC = 85oC IO(RMS) Max. continuous RMS on-state current. As AC switch 100 135 ITSM Max. peak, one cycle 850 1310 t=10ms No voltage or non-repetitive on-state 890 1370 t=8.3ms reapplied IFSM or forward current IF(AV) forward current (Diodes) I2t I2√t Max. I2t for fusing Max. I2√t for fusing (1) VT(TO) Max. value of threshold voltage (2) or 715 1100 t=10ms 100% VRRM 750 1150 t=8.3ms reapplied 940 1450 t=10ms TJ = 25oC, I(RMS) Sinusoidal half wave, Initial TJ = TJ max. 985 1520 t=8.3ms no voltage reapplied 3.61 8.56 t=10ms No voltage 3.30 7.82 t=8.3ms reapplied 2.56 6.05 t=10ms 100% VRRM 2.33 5.53 4.42 10.05 4.03 9.60 36.1 85.6 0.88 0.85 0.91 0.88 rt Max. value of on-state 5.90 3.53 5.74 3.41 VTM slope resistance (2) Max. peak on-state or VFM forward voltage 1.81 1.54 di/dt Max. non-repetitive rate of rise of turned on 150 KA2s Initial TJ = TJ max. t=8.3ms reapplied t=10ms TJ = 25oC, t=8.3ms no voltage reapplied KA2√s V mΩ V A/µs t=0.1 to 10ms, no voltage reapplied Low level (3) TJ = TJ max High level (4) Low level (3) TJ = TJ max High level (4) ITM = π x IT(AV) TJ = 25°C IFM = π x IF(AV) TJ = 25oC, from 0.67 VDRM, ITM =π x IT(AV), I = 500mA, g tr < 0.5 µs, tp > 6 µs current IH Max. holding current 200 IL Max. latching current 400 (1) I2t for time tx = I2√t x √tx I(RMS) A TJ = 25oC, anode supply = 6V, mA resistive load, gate open circuit TJ = 25oC, anode supply = 6V,resistive load (2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2 (3) 16.7% x π x IAV < I < π x IAV (4) I > π x IAV 2 www.irf.com IRK.41, .56 Series Bulletin I27131 rev. G 10/02 Triggering Parameters PGM IRK.41 Max. peak gate power IRK.56 10 10 PG(AV) Max. average gate power 2.5 2.5 IGM 2.5 2.5 Max. peak gate current -VGM Max. peak negative TJ = - 40°C V TJ = 25°C TJ = 125°C 1.7 270 150 Max. gate current TJ = - 40°C TJ = 25°C mA 80 Max. gate voltage that will not trigger IGD A 2.5 required to trigger VGD W 4.0 Max. gate voltage required to trigger IGT Conditions 10 gate voltage VGT Units Max. gate current that will not trigger TJ = 125°C Anode supply = 6V resistive load Anode supply = 6V resistive load 0.25 V TJ = 125oC, rated VDRM applied 6 mA TJ = 125oC, rated VDRM applied Blocking Parameters IRK.41 IRRM Max. peak reverse and IDRM off-state leakage current IRK.56 Units 15 Conditions TJ = 125 oC, gate open circuit mA at VRRM, VDRM 2500 (1 min) VINS 50 Hz, circuit to base, all terminals RMS isolation voltage V 3500 (1 sec) dv/dt Max. critical rate of rise of off-state voltage (5) shorted 500 TJ = 125oC, linear to 0.67 VDRM, gate open circuit V/µs (5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT41/16AS90. Thermal and Mechanical Specifications Parameters IRK.41 IRK.56 TJ Junction operating temperature range - 40 to 125 Tstg Storage temp. range - 40 to 125 Units Conditions °C RthJC Max. internal thermal resistance, junction 0.23 0.20 Per module, DC operation to case K/W RthCS Typical thermal resistance case to heatsink T Mounting surface flat, smooth and greased 0.1 Mounting torque ± 10% to heatsink 5 busbar wt A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound Nm 3 Approximate weight 110 (4) Case style gr (oz) TO-240AA JEDEC ∆R Conduction (per Junction) (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) Devices IRK.41 IRK.56 www.irf.com Sine half wave conduction 180o 0.11 0.09 120o 0.13 0.11 90o 0.17 0.13 60o 0.23 0.18 Rect. wave conduction 30o 0.34 0.27 180o 0.09 0.07 120o 0.14 0.11 90o 0.18 0.14 60o 0.23 0.19 30o 0.34 0.28 Units °C/W 3 IRK.41, .56 Series Bulletin I27131 rev. G 10/02 Ordering Information Table Device Code IRK T 56 1 2 3 / 16 A S90 4 5 6 IRK.57 types With no auxiliary cathode 1 - 2 - Module type Circuit configuration (See Circuit Configuration table below) 3 - Current code * * 4 - Voltage code (See Voltage Ratings table) 5 - A : Gen V 6 - dv/dt code: * * Available with no auxiliary cathode. To specify change: 41 to 42 56 to 57 e.g. : IRKT57/16A etc. S90 = dv/dt 1000 V/µs No letter = dv/dt 500 Vµs Outline Table Dimensions are in millimeters and [inches] IRKT IRKH (1) ~ (1) ~ + (2) + (2) + (2) (3) (3) (3) G1 K1 (4) (5) IRKN IRKL (1) ~ K2 G2 (7) (6) G1 K1 (4) (5) (1) - (2) + + (3) K2 G2 (7) (6) G1 K1 (4) (5) NOTE: To order the Optional Hardware see Bulletin I27900 4 www.irf.com IRK.41, .56 Series IRK.41.. Series R thJC (DC) = 0.46 K/W 120 110 Conduction Angle 100 30° 60° 90° 90 180° 0 10 20 30 40 50 IRK.41.. Series R thJC (DC) = 0.46 K/W 120 110 Conduction Period 30° 100 60° 90° 120° 90 80 180° DC 0 20 40 60 Average On-state Current (A) Average On-state Current (A) Fig. 2 - Current Ratings Characteristics 70 180° 120° 90° 60° 30° 60 50 RMS Limit 40 30 Conduction Angle 20 IRK.41.. Series Per Junction T J = 125°C 10 0 130 Fig. 1 - Current Ratings Characteristics 0 10 20 30 40 50 Maximum Average On-state Power Loss (W) 80 120° Maximum Allowable Case Temperature (°C) 130 80 100 DC 180° 120° 90° 60° 30° 80 60 RMS Limit 40 Conduction Period IRK.41.. Series Per Junction T J = 125°C 20 0 0 20 40 60 80 Average On-state Current (A) Average On-state Current (A) Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics 800 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 700 600 500 400 IRK.41.. Series Per Junction 300 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current www.irf.com Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (°C) Bulletin I27131 rev. G 10/02 900 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J= 125°C No Voltage Reapplied Rated V RRMReapplied 800 700 600 500 400 IRK.41.. Series Per Junction 300 0.01 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current 5 IRK.41, .56 Series 140 R thSA K/ W 0.3 R W 5 K/W 0 100 80 Delta K/W - 60 = 0 .1 40 80 K/ W 3 K/ IRK.41.. Series Per Module T J = 125°C 20 K/W Conduction Angle 0 W 60 2K /W 0 0. 5 1.5 20 60 K/ 80 40 40 W K/ 100 0. 7 180° 120° 90° 60° 30° 120 1 Maximum Total On-state Power Loss (W) Bulletin I27131 rev. G 10/02 20 100 120 140 Maximum Allowable Ambient Temperature (°C) Total RMS Output Current (A) Fig. 7 - On-state Power Loss Characteristics W 40 aR 20 el t -D 0 K/ W 0. 7 K/ W 1K /W 2 x IRK.41.. Series Single Phase Bridge Connected T J = 125°C 50 K/ W K/ 0. 5 150 100 .1 =0 200 3 A 180° (Sine) 180° (Rect) W K/ 0. 250 0 R t hS 300 2 0. Maximum Total Power Loss (W) 350 60 80 1.5 K /W 0 100 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) Total Output Current (A) Fig. 8 - On-state Power Loss Characteristics 500 = 400 K/ W 350 150 3 x IRK.41.. Series Three Phase Bridge Connected T J = 125°C 100 50 0 20 40 60 80 100 Total Output Current (A) 120 0.7 K/ W K/ W 1 K/ 0 140 W R 0. 5 200 K/ ta el 0. 3 120° (Rect) 250 -D 300 0 W K/ 0.1 2 0. Maximum Total Power Loss (W) SA R th 450 W 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) Fig. 9 - On-state Power Loss Characteristics 6 www.irf.com IRK.41, .56 Series IRK.56.. Series R (DC) = 0.40 K/W thJC 120 110 Conduction Angle 100 90 30° 60° 80 70 0 10 20 30 90° 40 120° 50 180° 60 70 130 IRK.56.. Series R thJC (DC) = 0.40 K/W 120 110 Conduction Period 100 90 90° 80 30° 70 0 20 60 RMS Limit 50 40 30 Conduction Angle 20 IRK.56.. Series Per Junction T J = 125°C 10 0 10 20 30 40 50 60 120 100 100 80 60 RMS Limit Conduction Period 40 IRK.56.. Series Per Junction T J = 125°C 20 0 0 20 @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 900 800 700 IRK.56.. Series Per Junction 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 14 - Maximum Non-Repetitive Surge Current www.irf.com 60 80 100 Fig. 13 - On-state Power Loss Characteristics Peak Half Sine Wave On-state Current (A) At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C 1000 40 Average On-state Current (A) Fig. 12 - On-state Power Loss Characteristics Peak Half Sine Wave On-state Current (A) 80 DC 180° 120° 90° 60° 30° Average On-state Current (A) 500 60 DC Average On-state Current (A) 70 600 40 180° Fig. 11 - Current Ratings Characteristics 80 1100 120° Average On-state Current (A) 180° 120° 90° 60° 30° 1200 60° Fig. 10 - Current Ratings Characteristics 90 0 Maximum Allowable Case Temperature (°C) 130 Maximum Average On-state Power Loss (W) Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (°C) Bulletin I27131 rev. G 10/02 1400 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J = 125°C No Voltage Reapplied Rated V RRMReapplied 1200 1000 800 600 IRK.56.. Series Per Junction 400 0.01 0.1 1 Pulse Train Duration (s) Fig. 15 - Maximum Non-Repetitive Surge Current 7 IRK.41, .56 Series Bulletin I27131 rev. G 10/02 S R th W K/ A =0 W K/ .1 W K/ K/W 5 0. e lt -D 0. 7 120 aR K/ W 1K /W 100 80 1.5 K/ W 2 K/ W Conduction Angle 60 IRK.56.. Series Per Module T J = 125°C 40 20 0 2 0. 4 140 0. 160 W K/ 180° 120° 90° 60° 30° 180 3 0. Maximum Total On-state Power Loss (W) 200 0 20 40 60 80 100 120 4 K/W 140 0 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) Total RMS Output Current (A) Fig. 16 - On-state Power Loss Characteristics 400 R th SA 0. 5 0.7 150 2 x IRK.56.. Series Single Phase Bridge Connected T J = 125°C 100 50 0 0 20 40 60 80 /W R 200 a elt 250 K/ W 0. 3K -D 300 W K/ 180° (Sine) 180° (Rect) 1 0. 0. 2 350 = Maximum Total Power Loss (W) 450 100 120 K /W K/ W 1 K/ W 2 K/W 0 140 Total Output Current (A) 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) Fig. 17 - On-state Power Loss Characteristics SA R th 500 = 3 x IRK.56.. Series Three Phase Bridge Connected T J = 125°C 100 0 0 20 40 60 W 0.5 K/ W 0.7 K/W 1 K/ W 80 100 120 140 160 180 0 Total Output Current (A) K/ R 200 0.3 K/ W ta el 300 2 -D 120° (Rect) W K/ 0. 400 1 0. Maximum Total Power Loss (W) 600 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) Fig. 18 - On-state Power Loss Characteristics 8 www.irf.com IRK.41, .56 Series Bulletin I27131 rev. G 10/02 1000 Instantaneous On-state Current (A) Instantaneous On-state Current (A) 1000 100 T J= 25°C T J= 125°C 10 IRK.41.. Series Per Junction 1 0 1 2 3 4 5 6 100 TJ = 25°C TJ = 125°C 10 IRK.56.. Series Per Junction 1 0.5 7 Instantaneous On-state Voltage (V) 450 400 IRK.41.. Series IRK.56.. Series T J = 125 °C I TM = 200 A 100 A 350 50 A 300 250 20 A 200 10 A 150 100 10 20 30 40 50 60 70 80 90 100 2 2.5 3 3.5 4 4.5 110 I TM = 200 A 100 100 A 90 50 A 80 20 A 70 10 A 60 50 IRK.41.. Series IRK.56.. Series T J = 125 °C 40 30 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of Forward Current - di/dt (A/µs) Rate Of Fall Of On-state Current - di/dt (A/µs) Fig. 21 - Recovery Charge Characteristics Transient Thermal Impedance Z thJC (K/W) 1.5 Fig. 20 - On-state Voltage Drop Characteristics Maximum Reverse Recovery Current - Irr (A) Maximum Reverse Recovery Charge - Qrr (µC) Fig. 19 - On-state Voltage Drop Characteristics 500 1 Instantaneous On-state Voltage (V) Fig. 22 - Recovery Current Characteristics 1 Steady State Value: R thJC = 0.46 K/W R thJC = 0.40 K/W (DC Operation) IRK.41.. Series IRK.56.. Series 0.1 Per Junction 0.01 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 23 - Thermal Impedance ZthJC Characteristics www.irf.com 9 IRK.41, .56 Series Bulletin I27131 rev. G 10/02 Rectangular gate pulse a)Recommended load line for rated di/dt: 20 V, 30 ohms tr = 0.5 µs, tp >= 6 µs b)Recommended load line for <= 30% rated di/dt: 20 V, 65 ohms 10 tr = 1 µs, tp >= 6 µs (1) PGM = 100 W, tp = 500 µs (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms (b) (a) TJ = -40 °C TJ = 125 °C 1 TJ = 25 °C Instantaneous Gate Voltage (V) 100 (4) (3) (2) (1) VGD IGD 0.1 0.001 0.01 IRK.41../.56.. Series 0.1 1 Frequency Limited by PG(AV) 10 100 1000 Instantaneous Gate Current (A) Fig. 24 - Gate Characteristics Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 10/02 10 www.irf.com