FJP5200 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • 1 High Current Capability: IC = 17A. High Power Dissipation : 80watts. High Frequency : 30MHz. High Voltage : VCEO=250V Wide S.O.A for reliable operation. Excellent Gain Linearity for low THD. Complement to FJP1943 Thermal and electrical Spice models are available. Same transistor is also available in: -- TO264 package, 2SC5200/FJL4315 : 150 watts -- TO3P package, 2SC5242/FJA4313 : 130 watts -- TO220F package, FJPF5200 : 50 watts Absolute Maximum Ratings* Symbol TO-220 1.Base 2.Collector 3.Emitter Ta = 25°C unless otherwise noted Parameter Ratings Units BVCBO Collector-Base Voltage 250 V BVCEO Collector-Emitter Voltage 250 V BVEBO Emitter-Base Voltage 5 V IC Collector Current(DC) 17 A IB Base Current 1.5 A PD Total Device Dissipation(TC=25°C) Derate above 25°C 80 0.64 W W/°C TJ, TSTG Junction and Storage Temperature - 50 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics* Symbol RθJC Ta=25°C unless otherwise noted Parameter Thermal Resistance, Junction to Case Max. Units 1.25 °C/W * Device mounted on minimum pad size hFE Classification Classification R O hFE1 55 ~ 110 80 ~ 160 © 2009 Fairchild Semiconductor Corporation FJP5200 Rev. C www.fairchildsemi.com 1 FJP5200 — NPN Epitaxial Silicon Transistor January 2009 Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC=5mA, IE=0 250 V BVCEO Collector-Emitter Breakdown Voltage IC=10mA, RBE=∞ 250 V BVEBO Emitter-Base Breakdown Voltage IE=5mA, IC=0 5 V ICBO Collector Cut-off Current VCB=230V, IE=0 5.0 µA IEBO Emitter Cut-off Current VEB=5V, IC=0 5.0 µA hFE1 DC Current Gain VCE=5V, IC=1A 55 hFE2 DC Current Gain VCE=5V, IC=7A 35 VCE(sat) Collector-Emitter Saturation Voltage IC=8A, IB=0.8A 0.4 3.0 V VBE(on) Base-Emitter On Voltage VCE=5V, IC=7A 1.0 1.5 V fT Current Gain Bandwidth Product VCE=5V, IC=1A 30 MHz Cob Output Capacitance VCB=10V, f=1MHz 200 pF 160 60 * Pulse Test: Pulse Widt=20µs, Duty Cycle≤2% Ordering Information Part Number Marking Package Packing Method FJP5200RTU J5200R TO-220 TUBE hFE1 R grade FJP5200OTU J5200O TO-220 TUBE hFE1 O grade © 2009 Fairchild Semiconductor Corporation FJP5200 Rev. C Remarks www.fairchildsemi.com 2 FJP5200 — NPN Epitaxial Silicon Transistor Electrical Characteristics* Ta=25°C unless otherwise noted 16 IB=200mA IB = 180mA IB = 160mA IB = 140mA IB = 120mA 12 Vce=5V o Tj=125 C hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 14 IB = 100mA 10 IB = 80mA 8 IB = 60mA 6 IB = 40mA 4 2 o Tj=25 C 100 o Tj=-25 C 10 IB = 0 0 0 2 4 6 8 10 12 14 16 18 20 1 1 VCE[V], COLLECTOR-EMITTER VOLTAGE 10 Ic[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain ( R grade ) o hFE, DC CURRENT GAIN Tj=125 C Tj=25 C Vce(sat)[mV], SATURATION VOLTAGE 10000 o Vce=5V 100 o Tj=-25 C 10 1 1 10 Ic=10Ib 1000 o o 100 Tj=25 C Tj=125 C o Tj=-25 C 10 1 0.1 1 10 Ic[A], COLLECTOR CURRENT Ic[A], COLLECTOR CURRENT Figure 3. DC current Gain ( O grade ) Figure 4. Collector-Emitter Saturation Voltage 12 VCE = 5V Ic=10Ib o Tj=-25 C 10 IC[A], COLLECTOR CURRENT Vbe(sat)[mV], SATURATION VOLTAGE 10000 o Tj=25 C 1000 o Tj=125 C 100 0.1 6 4 2 0 0.0 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 VBE[V], BASE-EMITTER VOLTAGE Ic[A], COLLECTOR CURRENT Figure 5. Base-Emitter Saturation Voltage Figure 6. Base-Emitter On Voltage © 2009 Fairchild Semiconductor Corporation FJP5200 Rev. C 8 www.fairchildsemi.com 3 FJP5200 — NPN Epitaxial Silicon Transistor Typical Characteristics o Transient Thermal Resistance, Rthjc[ C / W] 100 1.2 PC[W], POWER DISSIPATION 1.0 0.8 0.6 0.4 0.2 1E-6 1E-5 1E-4 1E-3 0.01 0.1 60 40 20 0 1 0 Pulse duration [sec] 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 7. Thermal Resistance Figure 8. Power Derating © 2009 Fairchild Semiconductor Corporation FJP5200 Rev. C 80 www.fairchildsemi.com 4 FJP5200 — NPN Epitaxial Silicon Transistor Typical Characteristics FJP5200 — NPN Epitaxial Silicon Transistor Mechanical Dimensions TO220 © 2009 Fairchild Semiconductor Corporation FJP5200 Rev. C www.fairchildsemi.com 5 FJP5200 NPN Epitaxial Silicon Transistor © 2009 Fairchild Semiconductor Corporation FJP5200 Rev. C www.fairchildsemi.com 6