DMN2028UVT N-CHANNEL ENHANCEMENT MODE MOSFET V(BR)DSS Features and Benefits ID RDS(ON) Max TA = +25°C 24m @ VGS = 4.5V 20V 6.2A Low Input Capacitance Low On-Resistance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) 32m @ VGS = 2.5V Mechanical Data Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. DC-DC Converters Power Management Functions Backlighting Case: TSOT26 Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.013 grams (Approximate) D TSOT26 D 1 6 D D 2 5 D G 3 4 S Top View G S Top View Pin Configuration Equivalent Circuit Ordering Information (Note 4) Part Number DMN2028UVT-7 DMN2028UVT-13 Notes: Case TSOT26 TSOT26 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information N2V Date Code Key Year Code Month Code 2014 B Jan 1 2015 C Feb 2 DMN2028UVT Document number: DS37128 Rev. 1 - 2 Mar 3 N2V = Product Type Marking Code YM = Date Code Marking Y = Year (ex: C = 2015) M = Month (ex: 9 = September) YM ADVANCE INFORMATION NEW PRODUCT Product Summary 2016 D Apr 4 May 5 2017 E Jun 6 1 of 6 www.diodes.com 2018 F Jul 7 Aug 8 2019 G Sep 9 Oct O 2020 H Nov N Dec D May 2015 © Diodes Incorporated DMN2028UVT ADVANCE INFORMATION NEW PRODUCT Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 4.5V Maximum Body Diode Forward Current (Note 6) Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) Steady State Symbol VDSS VGSS ID IS IDM TA = +25°C Value 20 ±8 6.2 1.5 40 Unit V V A A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Symbol PD TA = +25°C Steady state t<10s TA = +25°C Steady state t<10s Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) RJA PD RJA Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range RJC TJ, TSTG Value 1.2 105 76 1.6 76 50 15 -55 to +150 Unit W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 1 100 μA VGS(TH) Static Drain-Source On-Resistance RDS(ON) VSD 0.4 20 24 1.5 24 32 1.2 Ciss Coss Crss Qg Qgs Qgd tD(ON) tR tD(OFF) tF 856 83 78 8.3 1.3 3.1 13.2 12.6 65 22 Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: V nA V mΩ V Test Condition VGS = 0V, ID = 250μA VDS = 16V, VGS = 0V VGS = 8V, VDS = 0V VDS = VGS, ID = 250μA VGS = 4.5V, ID = 6.2A VGS = 2.5V, ID = 5.2A VGS = 0V, IS = 1.3A pF VDS = 10V, VGS = 0V f = 1.0MHz nC VGS = 4.5V, VDS = 10V, ID = 6.2A ns VDD = 10V, VGS = 4.5V, ID = 1A, RG = 6Ω 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMN2028UVT Document number: DS37128 Rev. 1 - 2 2 of 6 www.diodes.com May 2015 © Diodes Incorporated DMN2028UVT 30 VGS=8.0V 28 24 VGS=2.5V 20 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 VGS=3.0V VGS=4.5V 15 VGS=1.5V 10 5 16 12 8 TA=125℃ TA=150℃ 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 2 0.06 0.05 0.04 0.03 VGS=2.5V 0.02 VGS=4.5V 0.01 0 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 20 4 0 TA=85℃ TA=25℃ TA=-55℃ 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 3 0.05 VGS= 4.5V 0.04 TA=85℃ 0.03 TA=125℃ TA=150℃ TA=25℃ 0.02 TA=-55℃ 0.01 0 0 8 12 16 20 ID, DRAIN CURRENT (A) Figure 4. Typical On-Resistance vs. Drain Current and Temperature 5 10 15 20 25 30 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current 4 0.05 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.7 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) ADVANCE INFORMATION NEW PRODUCT VDS= 5.0V VGS=2.0V VGS=2.5V, ID=5.2A 1.5 1.3 VGS=4.5V, ID=6.2A 1.1 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 5. On-Resistance Variation with Temperature DMN2028UVT Document number: DS37128 Rev. 1 - 2 3 of 6 www.diodes.com 0.04 0.03 VGS=2.5V, ID=5A 0.02 VGS=4.5V, ID=8.2A 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature May 2015 © Diodes Incorporated DMN2028UVT 10 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.2 0.9 ID=1mA 0.6 ID=250μA 0.3 0 TA=25℃ 1 0.1 0.01 -50 -25 0 25 50 75 100 125 150 0.4 TJ, JUNCTION TEMPERATURE (℃) Figure 7. Gate Threshold Variation vs. Temperature 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8. Diode Forward Voltage vs. Current 1 100 10000 RDS(ON) Limited ID, DRAIN CURRENT (A) f=1MHz CT, JUNCTION CAPACITANCE (pF) Ciss 1000 Coss 100 Crss 10 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Typical Junction Capacitance 20 PW =100μs 10 1 PW =10ms PW =1ms PW =100ms 0.1 0.01 0 TJ(MAX)=150℃ PW =1s TA=25℃ PW =10s Single Pulse DUT on 1*MRP board DC VGS=8V 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. SOA, Safe Operation Area 100 1 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION NEW PRODUCT 1.5 D=0.5 D=0.9 D=0.3 D=0.7 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 RθJA(t)=r(t) * RθJA RθJA=101℃/W Duty Cycle, D=t1 / t2 D=0.005 D=Single Pulse 0.001 1E-05 DMN2028UVT Document number: DS37128 Rev. 1 - 2 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 11. Transient Thermal Resistance 4 of 6 www.diodes.com 100 1000 May 2015 © Diodes Incorporated DMN2028UVT Package Outline Dimensions ADVANCE INFORMATION NEW PRODUCT Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. TSOT26 Dim Min Max Typ A — 1.00 — A1 0.01 0.10 — A2 0.84 0.90 — D — — 2.90 E — — 2.80 E1 — — 1.60 b 0.30 0.45 — c 0.12 0.20 — e — — 0.95 e1 — — 1.90 L 0.30 0.50 — L2 — — 0.25 θ 0° 8° 4° θ1 4° 12° — All Dimensions in mm D e1 E E1 L2 c 4x1 e L 6x b A A2 A1 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C C Dimensions Value (in mm) C 0.950 X 0.700 Y 1.000 Y1 3.199 Y1 Y (6x) X (6x) DMN2028UVT Document number: DS37128 Rev. 1 - 2 5 of 6 www.diodes.com May 2015 © Diodes Incorporated DMN2028UVT ADVANCE INFORMATION NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2015, Diodes Incorporated www.diodes.com DMN2028UVT Document number: DS37128 Rev. 1 - 2 6 of 6 www.diodes.com May 2015 © Diodes Incorporated