HRLF125N06K 60V N-Channel Trench MOSFET 8DFN 5x6 FEATURES BVDSS = 60 V ID = 70 A Unrivalled Gate Charge : 50 nC (Typ.) Lower RDS(ON) : 10 mΩ (Typ.) @VGS=10V Lower RDS(ON) : 12 mΩ (Typ.) @VGS=4.5V 100% Avalanche Tested Absolute Maximum Ratings Symbol VDSS 1 TC=25℃ unless otherwise specified Parameter Drain-Source Voltage Value Units 60 V Drain Current – Continuous (TC = 25℃) 70 * A Drain Current – Continuous (TC = 100℃) 49 * A IDM Drain Current – Pulsed 245 * A VGS Gate-Source Voltage ±25 V EAS Single Pulsed Avalanche Energy (Note 2) 145 mJ EAR Repetitive Avalanche Energy (Note 1) 7.5 mJ Power Dissipation (TC = 25℃) 75 W Power Dissipation (TA = 25℃) 2.4 W -55 to +175 ℃ 300 ℃ ID PD (Note 1) TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Drain current limited by maximum junction temperature Thermal Resistance Characteristics Symbol Parameter Typ. Max. RθJA Junction-to-Ambient -- 62 RθJC Junction-to-Case -- 2.0 Units ℃/W ◎ SEMIHOW REV.A0,December 2014 HRLF125N06K December 2014 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) gFS Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 1.0 -- 2.4 V Static Drain-Source On-Resistance VGS = 10 V, ID = 15 A -- 10 12.5 mΩ VGS = 4.5 V, ID = 10 A -- 12 15 mΩ Forward Transconductance VDS = 15, ID = 15 A -- 60 -- S VGS = 0 V, ID = 250 ㎂ 60 -- -- V VDS = 48 V, VGS = 0 V -- -- 1 ㎂ VDS = 48 V, TJ = 125℃ -- -- 100 ㎂ VGS = ±20 V, VDS = 0 V -- -- ±100 ㎁ -- 2700 -- ㎊ -- 230 -- ㎊ -- 180 -- ㎊ -- 1.2 -- Ω -- 20 -- ㎱ -- 50 -- ㎱ -- 120 -- ㎱ -- 40 -- ㎱ -- 50 -- nC -- 7 -- nC -- 13 -- nC Off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 25 V, VGS = 0 V, f = 1.0 MHz VGS = 0 V, VDS = 0 V, f = 1MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 30 V, ID = 15 A, RG = 6 Ω VDS = 48 V, ID = 15 A, VGS = 10 V Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 70 ISM Pulsed Source-Drain Diode Forward Current -- -- 245 VSD Source-Drain Diode Forward Voltage IS = 15 A, VGS = 0 V -- -- 1.3 V trr Reverse Recovery Time -- 40 -- ㎱ Qrr Reverse Recovery Charge IS = 15 A, VGS = 0 V diF/dt = 100 A/μs -- 40 -- nC A Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=1mH, IAS=13A, VDD=25V, RG=25Ω, Starting TJ =25°C ◎ SEMIHOW REV.A0,December 2014 HRLF125N06K Electrical Characteristics TJ=25 °C HRLF125N06K Typical Characteristics VGS 10 V 8V 7V 6V 5V 4V Bottom : 3 V 100 2 10 ID, Drain Current [A] ID, Drain Current [A] Top : 10 25oC 1 * Notes : 1. VDS= 15V 2. 300us Pulse Test * Notes : 1. 300us Pulse Test 2. TC = 25oC 101 100 175oC 0.1 0 101 2 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics IDR, Reverse Drain Current [A] RDS(ON) [mΩ], Drain-Source On-Resistance 30 25 20 VGS = 4.5V 15 10 VGS = 10V 100 10 o 175oC 25 C 1 * Notes : 1. VGS= 0V 2. 300us Pulse Test ∗ Note : TJ = 25oC 5 0 40 80 120 160 0.1 0.0 0.4 Capacitances [pF] 4000 Ciss 3000 2000 * Note ; 1. VGS = 0 V 2. f = 1 MHz Coss Crss 0 10-1 1.6 2.0 100 101 12 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1000 1.2 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 5000 0.8 VSD, Source-Drain Voltage [V] ID, Drain Current [A] 10 8 6 4 2 VDS = 48V ID = 15A 0 0 10 20 30 40 50 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 60 ◎ SEMIHOW REV.A0,December 2014 (continued) 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance 1.2 BVDSS, (Normalized) Drain-Source Breakdown Voltage HRLF125N06K Typical Characteristics 1.1 1.0 0.9 ∗ Note : 1. VGS = 0 V 2. ID = 250µA 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ∗ Note : 1. VGS = 10 V 2. ID = 15 A 0.5 0.0 -100 200 -50 0 50 100 150 200 TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 103 80 100 us 60 ID, Drain Current [A] 102 1 ms 10 ms 101 DC 100 * Notes : 1. TC = 25 oC 40 20 2. TJ = 175 oC 3. Single Pulse 10-1 10-1 100 101 0 25 102 50 75 Figure 9. Maximum Safe Operating Area 100 100 125 150 175 TC, Case Temperature [oC] VDS, Drain-Source Voltage [V] ZθJC(t), Thermal Response ID, Drain Current [A] Operation in This Area is Limited by R DS(on) Figure 10. Maximum Drain Current vs Case Temperature D=0.5 * Notes : 1. ZθJC(t) = 2.0 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.2 0.1 0.05 10-1 PDM 0.02 0.01 t1 single pulse 10-2 10-5 10-4 10-3 10-2 10-1 t2 100 101 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,December 2014 HRLF125N06K Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time ◎ SEMIHOW REV.A0,December 2014 HRLF125N06K Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,December 2014 HRLF125N06K Package Dimension 8DFN 5x6 ◎ SEMIHOW REV.A0,December 2014