Nell GBJ25H Glass passivated single-phase bridge rectifier, 25a Datasheet

RoHS
GBJ25H Series RoHS
SEMICONDUCTOR
Nell High Power Products
Glass Passivated Single-Phase Bridge Rectifier, 25A
GBJ2504H Thru GBJ2512H
30±0.3
30±0.3
8.8±0.2
3.6±0.1
0.85±0.05
Ø4.0
20±0.3
19±0.2
Aluminum base
plate
20±0.3
Ø3.2±0.2
Ø6.0±0.2
29±0.2
1.0±0.1
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Aluminum base
plate
4.6±0.1
4±0.2
17.5±0.2
2.0±0.2
1.0±0.1
10±0.2
0.65±0.05
7.5±0.2
7.5±0.2
All dimensions in millimeters
FEATURES
UL recognition file number E320098
Typical IR less than 2.0 µA
High surge current capability
Low thermal resistance
Compliant to RoHS
Isolation voltage up to 2500V
Front
Rear
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave
rectification for big power supply, field supply for DC motor,
industrial automation applications.
ADVANTAGE
International standard package
Epoxy meets UL 94 V-O flammability rating
Small volume, light weight
Small thermal resistance
High heat-conduction rate
Low temperature rise
High temperature soldering guaranteed :
260°C/10 second, 2.3kg tension force
Weight: 6.7g (0.24 ozs)
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PRIMARY CHARACTERRISTICS
Page 1 of 3
IF(AV)
25A
V RRM
400V to 1200V
I FSM
350A
IR
5 µA
VF
1.10V
T J max.
150ºC
RoHS
GBJ25H Series RoHS
SEMICONDUCTOR
Nell High Power Products
MAJOR RATINGS AND CHARACTERISTICS (TA = 25°C unless otherwise noted)
GBJ25..H
PARAMETER
UNIT
SYMBOL
04
06
08
10
12
Maximum repetitive peak reverse voltage
V RRM
400
600
800
1000
1200
V
Peak reverse non-repetitive voltage
V RSM
500
700
900
1100
1300
V
V DC
400
600
800
1000
1200
V
Maximum DC blocking voltage
Maximum average forward rectified output current, T c = 85°C
Peak forward surge current single sine-wave superimposed on
I F(AV)
25
A
I FSM
350
A
I 2t
508
A 2s
V ISO
2500
V
TJ
-40 to 150
ºC
T STG
-40 to 150
ºC
rated load
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)
for fusing
RMS isolation voltage from case to leads
Operating junction storage temperature range
Storage temperature range
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
Maximum instantaneous forward drop per diode
Maximum reverse DC current at rated DC blocking
SYMBOL
I F = 12.5A
VF
T A = 25°C
voltage per diod
GBJ25..H
TEST
CONDITIONS
04
06
08
UNIT
10
12
1.10
V
5
IR
T A = 150°C
µA
500
THERMAL AND MECHANICAL (TA = 25°C unless otherwise noted)
GBJ25..H
TEST CONDITIONS
PARAMETER
UNIT
SYMBOL
04
Typical thermal resistance
junction to case
Single-side heat dissipation, sine
half wave
Mounting
torque
± 10 %
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound.
to heatsink M3
06
R θJC (1)
Approximate weight
Notes
(1) With heatsink, single side heat dissipation, half sine wave.
Ordering Information Tabel
Device code
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GBJ
25
10
H
1
2
3
4
1
-
Product type : “GBJ” Package,1Ø Bridge
2
-
I F(AV) rating : "25" for 25A
3
-
Voltage code : code x 100 = VRRM
4
-
H: With Aluminum base plate (heatsink)
Page 2 of 3
08
10
12
0.85
°C/W
0.8
N.m
6.7
g
RoHS
GBJ25H Series RoHS
SEMICONDUCTOR
Nell High Power Products
Fig.1 Derating curve for output rectified current
Fig.2 Maximum non-repetitive peak forward
surge current per bridge element
T J = 25°C
Average output current, amperes (A)
Average forward output current, amperes (A)
400
25
20
15
10
5
0
200
100
0
0
20
60
40
80
100
120
140
160
10
1
100
Ambient temperature (°C)
Number of cycles at 50H z
Fig.3 Typical reverse characteristics per
bridge element
Fig.4 Typical forward characteristics per
bridge element
100
100
Instantaneous forward current, amperes (A)
Instantaneous reverse output micro, amperes (μA)
300
10
TJ =
100
°C
1.0
0.1
TJ = 2
5°C
10
1.0
T J = 25°C
0.1
0.01
0
20
40
60
80
100
120
140
0.5
Percent of rated peak reverse voltage (%)
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0.7
0.9
1.1
Forward voltage (v)
Page 3 of 3
1.3
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