IGBT IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage IKD15N60RA 600VTRENCHSTOPTMRC-Seriesforhardswitchingapplications Datasheet IndustrialPowerControl IKD15N60RA TRENCHSTOPTMRC-Seriesforhardswitchingapplications IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage Features: C TRENCHSTOPTMReverseConducting(RC)technologyfor600V applicationsoffering •OptimisedVCEsatandVFforlowconductionlosses •SmoothswitchingperformanceleadingtolowEMIlevels •Verytightparameterdistribution •Operatingrangeof1to20kHz •Maximumjunctiontemperature175°C •Shortcircuitcapabilityof5µs •Bestinclasscurrentversuspackagesizeperformance •QualifiedaccordingtoAECQ101 •Pb-freeleadplating;RoHScompliant(forPG-TO252:solder temperature260°C,MSL1) CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E C G E Applications: •HIDlighting •Piezoinjection KeyPerformanceandPackageParameters Type IKD15N60RA VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 600V 15A 1.65V 175°C K15R60A PG-TO252-3 2 Rev.2.1,2013-02-15 IKD15N60RA TRENCHSTOPTMRC-Seriesforhardswitchingapplications TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 3 Rev.2.1,2013-02-15 IKD15N60RA TRENCHSTOPTMRC-Seriesforhardswitchingapplications Maximumratings Parameter Symbol Value Unit Collector-emitter voltage VCE 600 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 30.0 15.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 45.0 A TurnoffsafeoperatingareaVCE≤600V,Tvj≤175°C - 45.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 30.0 15.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 45.0 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤400V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=150°C tSC PowerdissipationTC=25°C Ptot 250.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+175 °C µs 5 Soldering temperature, reflow soldering (MSL1 according to JEDEC J-STA-020) °C 260 ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance, junction - case Rth(j-c) 0.60 K/W Diode thermal resistance, junction - case Rth(j-c) 2.00 K/W Thermal resistance, min. footprint junction - ambient Rth(j-a) 75 K/W Thermal resistance, 6cm² Cu on PCB junction - ambient Rth(j-a) 50 K/W 4 Rev.2.1,2013-02-15 IKD15N60RA TRENCHSTOPTMRC-Seriesforhardswitchingapplications ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 600 - - V VGE=15.0V,IC=15.0A Tvj=25°C Tvj=175°C - 1.65 1.85 2.10 - V - 1.70 1.70 2.10 - V 4.3 5.0 5.7 V StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA Collector-emitter saturation voltage VCEsat Diode forward voltage VF VGE=0V,IF=15.0A Tvj=25°C Tvj=175°C Gate-emitter threshold voltage VGE(th) IC=0.25mA,VCE=VGE Zero gate voltage collector current ICES VCE=600V,VGE=0V Tvj=25°C Tvj=175°C - - Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=15.0A - 9.4 - S Integrated gate resistor rG 40.0 µA 1000.0 Ω none ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 961 - - 53 - - 33 - - 90.0 - nC - 7.0 - nH - A DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE Short circuit collector current Max. 1000 short circuits IC(SC) Time between short circuits: ≥ 1.0s VCE=25V,VGE=0V,f=1MHz VCC=480V,IC=15.0A, VGE=15V VGE=15.0V,VCC≤400V, tSC≤5µs 5 - pF Rev.2.1,2013-02-15 IKD15N60RA TRENCHSTOPTMRC-Seriesforhardswitchingapplications SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 16 - ns - 10 - ns - 183 - ns - 136 - ns - 0.37 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff - 0.53 - mJ Total switching energy Ets - 0.90 - mJ - 110 - ns - 0.76 - µC - 20.5 - A - -1640 - A/µs Tvj=25°C, VCC=400V,IC=15.0A, VGE=0.0/15.0V, rG=15.0Ω,Lσ=60nH, Cσ=40pF Lσ,CσfromFig.E DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25°C, VR=400V, IF=15.0A, diF/dt=1300A/µs dirr/dt SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 15 - ns - 11 - ns - 212 - ns - 218 - ns - 0.41 - mJ IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff - 0.84 - mJ Total switching energy Ets - 1.25 - mJ - 190 - ns - 1.70 - µC - 27.0 - A - -280 - A/µs Tvj=175°C, VCC=400V,IC=15.0A, VGE=0.0/15.0V, rG=15.0Ω,Lσ=60nH, Cσ=40pF Lσ,CσfromFig.E DiodeCharacteristic,atTvj=175°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=175°C, VR=400V, IF=15.0A, diF/dt=1300A/µs dirr/dt 6 Rev.2.1,2013-02-15 IKD15N60RA TRENCHSTOPTMRC-Seriesforhardswitchingapplications 12 11 9 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 10 8 7 6 5 4 3 10 tp=1µs 10µs 20µs 50µs 1 200µs 500µs DC 2 1 0 Ptot=8,6W,Rth(j-a)=8K/W 0.1 1 10 0.1 100 1 f,SWITCHINGFREQUENCY[kHz] Figure 1. Collectorcurrentasafunctionofswitching frequency (Tvj≤175°C,Ta=55°C,D=0,5,VCE=400V, VGE=15/0V,rG=15Ω,PCBmountingwith thermal vias and heatsink, see Appnote: www.infineon.com/igbt) 1000 30 25 IC,COLLECTORCURRENT[A] 200 Ptot,POWERDISSIPATION[W] 100 Figure 2. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tvj≤175°C;VGE=15V) 250 150 100 50 0 10 VCE,COLLECTOR-EMITTERVOLTAGE[V] 20 15 10 5 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] 25 50 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 3. Powerdissipationasafunctionofcase temperature (Tvj≤175°C) Figure 4. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tvj≤175°C) 7 Rev.2.1,2013-02-15 IKD15N60RA TRENCHSTOPTMRC-Seriesforhardswitchingapplications 45 45 VGE=20V 40 17V 15V 13V 30 11V 9V 25 7V 20 15 15V 13V 30 20 15 5 5 1 2 3 0 4 9V 7V 10 0 11V 25 10 0 17V 35 IC,COLLECTORCURRENT[A] 35 IC,COLLECTORCURRENT[A] VGE=20V 40 0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tvj=25°C) 3 4 3.5 Tj=25°C Tj=175°C VCEsat,COLLECTOR-EMITTERSATURATION[V] 40 35 IC,COLLECTORCURRENT[A] 2 Figure 6. Typicaloutputcharacteristic (Tvj=175°C) 45 30 25 20 15 10 5 0 1 VCE,COLLECTOR-EMITTERVOLTAGE[V] 4 6 8 10 12 3.0 2.5 2.0 1.5 1.0 0.5 0.0 14 VGE,GATE-EMITTERVOLTAGE[V] IC=7,5A IC=15A IC=30A 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 7. Typicaltransfercharacteristic (VCE=10V) Figure 8. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 8 Rev.2.1,2013-02-15 IKD15N60RA TRENCHSTOPTMRC-Seriesforhardswitchingapplications 1000 1000 100 t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr td(off) tf td(on) tr 10 1 0 5 10 15 20 25 100 10 1 30 0 10 IC,COLLECTORCURRENT[A] Figure 9. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,rG=15Ω,Dynamictestcircuitin Figure E) 40 50 7 VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] td(off) tf td(on) tr t,SWITCHINGTIMES[ns] 30 Figure 10. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,IC=15A,Dynamictestcircuitin Figure E) 1000 100 10 1 20 rG,GATERESISTOR[Ω] 25 50 75 100 125 150 6 5 4 3 2 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 11. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=15A,rG=15Ω,Dynamictestcircuitin Figure E) typ. min. max. 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 12. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0,25mA) 9 Rev.2.1,2013-02-15 IKD15N60RA TRENCHSTOPTMRC-Seriesforhardswitchingapplications 2.5 1.8 Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] Eoff Eon Ets 2.0 1.5 1.0 0.5 0.0 0 5 10 15 20 25 1.5 1.2 0.9 0.6 0.3 0.0 30 0 10 IC,COLLECTORCURRENT[A] Figure 13. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,rG=15Ω,Dynamictestcircuitin Figure E) 40 50 1.5 Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] 30 Figure 14. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,IC=15A,Dynamictestcircuitin Figure E) 1.5 1.0 0.5 0.0 20 rG,GATERESISTOR[Ω] 25 50 75 100 125 150 0.5 0.0 300 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 15. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=15A,rG=15Ω,Dynamictestcircuitin Figure E) 1.0 350 400 450 VCE,COLLECTOR-EMITTERVOLTAGE[V] 10 Figure 16. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=175°C,VGE=15/0V, IC=15A,rG=15Ω,Dynamictestcircuitin Figure E) Rev.2.1,2013-02-15 IKD15N60RA TRENCHSTOPTMRC-Seriesforhardswitchingapplications 16 120V 480V 1000 Ciss Coss Crss 12 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 14 10 8 6 100 4 2 0 0 20 40 60 80 10 100 0 QGE,GATECHARGE[nC] Figure 17. Typicalgatecharge (IC=15A) 15 20 25 30 14 tSC,SHORTCIRCUITWITHSTANDTIME[µs] IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] 10 Figure 18. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 175 150 125 100 75 50 5 VCE,COLLECTOR-EMITTERVOLTAGE[V] 12 14 16 18 12 10 8 6 4 2 0 20 VGE,GATE-EMITTERVOLTAGE[V] 10 11 12 13 14 15 VGE,GATE-EMITTERVOLTAGE[V] Figure 19. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE≤400V,startatTvj=25°C) Figure 20. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE≤400V,startatTvj=150°C) 11 Rev.2.1,2013-02-15 IKD15N60RA TRENCHSTOPTMRC-Seriesforhardswitchingapplications Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 single pulse 0.01 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.1 single pulse i: 1 2 3 4 ri[K/W]: 0.0478 0.3033 0.2438 0.0281 τi[s]: 9.7E-5 4.4E-4 2.0E-3 0.03723 0.001 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 i: 1 2 3 4 ri[K/W]: 0.393 1.0808 0.4767 0.0568 τi[s]: 1.2E-4 3.4E-4 1.9E-3 0.02678 0.01 1E-7 1 1E-6 1E-5 tp,PULSEWIDTH[s] 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 21. IGBTtransientthermalimpedance1) (D=tp/T) Figure 22. Diodetransientthermalimpedanceasa functionofpulsewidth1) (D=tp/T) 225 2.00 Tj=25°C, IF = 15A Tj=175°C, IF = 15A Qrr,REVERSERECOVERYCHARGE[µC] trr,REVERSERECOVERYTIME[ns] 200 175 150 125 100 75 1000 1100 1200 1300 1400 1500 diF/dt,DIODECURRENTSLOPE[A/µs] 1.75 1.50 Tj=25°C, IF = 15A Tj=175°C, IF = 15A 1.25 1.00 0.75 0.50 1000 1100 1200 1300 1400 1500 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 23. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=400V) 12 Figure 24. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=400V) Rev.2.1,2013-02-15 IKD15N60RA TRENCHSTOPTMRC-Seriesforhardswitchingapplications 30.0 0 Tj=25°C, IF = 15A Tj=175°C, IF = 15A 27.5 dIrr/dt,diodepeakrateoffallofIrr[A/µs] Irr,REVERSERECOVERYCURRENT[A] Tj=25°C, IF = 15A Tj=175°C, IF = 15A 25.0 22.5 -400 -800 -1200 20.0 -1600 17.5 15.0 1000 1100 1200 1300 1400 -2000 1000 1500 diF/dt,DIODECURRENTSLOPE[A/µs] 1100 1200 1300 1400 1500 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 25. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=400V) Figure 26. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V) 45 2.5 Tj=25°C Tj=175°C 40 IF=7,5A IF=15A IF=30A VF,FORWARDVOLTAGE[V] IF,FORWARDCURRENT[A] 35 30 25 20 15 2.0 1.5 10 5 0 0 1 2 1.0 3 VF,FORWARDVOLTAGE[V] 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 27. Typicaldiodeforwardcurrentasafunction offorwardvoltage 13 Figure 28. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature Rev.2.1,2013-02-15 IKD15N60RA TRENCHSTOPTMRC-Seriesforhardswitchingapplications PG - TO252 - 3 14 Rev.2.1,2013-02-15 IKD15N60RA TRENCHSTOPTMRC-Seriesforhardswitchingapplications t 15 Rev.2.1,2013-02-15 IKD15N60RA TRENCHSTOPTMRC-Seriesforhardswitchingapplications RevisionHistory IKD15N60RA Revision:2013-02-15,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2013-02-15 Final data sheet WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. Pleasesendyourproposal(includingareferencetothisdocument)to:[email protected] Publishedby InfineonTechnologiesAG 81726Munich,Germany 81726München,Germany ©2013InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin question,pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered. 16 Rev.2.1,2013-02-15