NTSV20U100CT Very Low Forward Voltage Trench-based Schottky Rectifier Exceptionally Low VF = 0.485 V at IF = 5 A www.onsemi.com Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance Low Thermal Resistance High Surge Capability These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant PIN CONNECTIONS 1 2, 4 3 4 TO−220AB CASE 221A STYLE 6 Typical Applications • Switching Power Supplies including Notebook / Netbook Adapters, • • • • 1 ATX and Flat Panel Display High Frequency and DC−DC Converters Freewheeling and OR−ing diodes Reverse Battery Protection Instrumentation 2 3 MARKING DIAGRAM Mechanical Characteristics • Case: Epoxy, Molded • Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in • Finish: All External Surfaces Corrosion Resistant and Terminal AY WW TSV20U10CG AKA Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Maximum for 10 sec A Y WW AKA G = Assembly Location = Year = Work Week = Polarity Designator = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2014 November, 2014 − Rev. 2 1 Publication Order Number: NTSV20U100CT/D NTSV20U100CT MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR, TC = 115°C) Per device Per diode Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 110°C) Per device Per diode Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Symbol Value Unit VRRM VRWM VR 100 V IF(AV) A 20 10 IFRM A 40 20 IFSM 100 A TJ −40 to +150 °C Storage Temperature Tstg −40 to +150 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms Operating Junction Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Rating Maximum Thermal Resistance Junction−to−Case Junction−to−Ambient Symbol Value Unit RqJC RqJA 2.0 70 °C/W °C/W ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted) Rating Symbol Maximum Instantaneous Forward Voltage (Note 1) (IF = 5 A, TJ = 25°C) (IF = 10 A, TJ = 25°C) vF (IF = 5 A, TJ = 125°C) (IF = 10 A, TJ = 125°C) Maximum Instantaneous Reverse Current (Note 1) (VR = 70 V, TJ = 25°C) (VR = 70 V, TJ = 125°C) IR (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) Typ Max 0.520 0.658 − 0.98 0.485 0.593 − 0.82 9.6 7.0 63.2 18.0 Unit V mA mA 800 25 mA mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0% ORDERING INFORMATION Device NTSV20U100CTG Package Shipping TO−220AB (Pb−Free) 50 Units / Rail www.onsemi.com 2 NTSV20U100CT TYPICAL CHARACTERISTICS 100 TA = 150°C IR, INSTANTANEOUS REVERSE CURRENT (mA) iF, INSTANTANEOUS FORWARD CURRENT (A) 100 TA = 25°C 10 TA = 125°C 1 0 0.2 0.4 0.8 0.6 1.0 1.2 1.4 1.6 TA = 125°C 1 0.1 0.001 1.8 30 40 50 60 70 80 90 100 Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Typical Reverse Characteristics 20 IF(AV), AVERAGE FORWARD CURRENT (A) 1000 100 0.1 1 10 15 Square Wave 10 5 0 20 40 60 80 100 120 140 VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (°C) Figure 3. Typical Junction Capacitance Figure 4. Current Derating per Leg 35 dc 30 25 Square Wave 20 15 10 5 20 40 60 80 100 120 PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 20 RqJC = 1.3°C/W 0 RqJC = 1.3°C/W dc 0 100 40 0 20 VR, INSTANTANEOUS REVERSE VOLTAGE (V) TJ = 25°C 10 TA = 25°C VF, INSTANTANEOUS FORWARD VOLTAGE (V) 10,000 C, JUNCTION CAPACITANCE (pF) 10 0.01 0.1 IF(AV), AVERAGE FORWARD CURRENT (A) TA = 150°C 140 IPK/IAV = 20 18 IPK/IAV = 10 IPK/IAV = 5 16 14 Square Wave 12 10 8 dc 6 4 2 0 TJ = 150°C 0 2 4 6 8 10 12 TC, CASE TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (A) Figure 5. Current Derating Figure 6. Forward Power Dissipation www.onsemi.com 3 14 NTSV20U100CT TYPICAL CHARACTERISTICS R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) 10 1 50% 20% 10% P(pk) 0.1 5% 0.01 t1 2% 1% 0.000001 t2 DUTY CYCLE, D = t1/t2 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 1 t, PULSE TIME (sec) Figure 7. Typical Transient Thermal Response www.onsemi.com 4 10 100 1000 NTSV20U100CT PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B F SEATING PLANE C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 6: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 ANODE CATHODE ANODE CATHODE ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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